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Journal Articles

Yb:YAG thin-disk chirped pulse amplification laser system for intense terahertz pulse generation

Ochi, Yoshihiro; Nagashima, Keisuke; Maruyama, Momoko; Tsubouchi, Masaaki; Yoshida, Fumiko; Kono, Nanase; Mori, Michiaki; Sugiyama, Akira

Optics Express (Internet), 23(11), p.15057 - 15064, 2015/06

 Times Cited Count:25 Percentile:78.83(Optics)

We have developed a 1 kHz repetition picosecond laser system dedicated for intense terahertz (THz) pulse generation. The system comprises a chirped pulse amplification laser equipped with a Yb:YAG thin-disk amplifier. At room temperature, the Yb:YAG thin-disk regenerative amplifier provides pulses having energy of over 10 mJ and spectral bandwidth of 1.2 nm. The pulse duration achieved after passage through a diffraction grating pair compressor was 1.3 ps. By employing this picosecond laser as a pump source, THz pulses having a peak frequency of 0.3 THz and 4 $$mu$$J of energy were generated by means of optical rectification in an Mg-doped LiNbO$$_{3}$$ crystal.

Oral presentation

Unified study of kinetics and dynamics on the elementary processes in collisions of vibrationally excited molecules

Kono, Nanase

no journal, , 

Studies on kinetics of vibrational excited molecules extract the information on reaction dynamics. New findings will contribute to unraveling complex chemical processes in combustion and atmosphere and to controlling of chemical reactions. There have, however, been few reports on the absolute rate coefficients of the elementary processes in collisions of vibrationally excited molecules. In this study, we have studied (1) Chemical reaction of vibrationally excited OH with CO, and (2) chemical reaction of vibrationally excited NH$$_{2}$$ with NO.

Oral presentation

QUADRA-T; A Driver laser system for intense THz pulse generation

Ochi, Yoshihiro; Nagashima, Keisuke; Maruyama, Momoko; Tsubouchi, Masaaki; Kono, Nanase; Yoshida, Fumiko; Sugiyama, Akira

no journal, , 

We have developed a high average power picosecond laser system, named QUADRA-T, dedicated to intense terahertz (THz) pulse generation. QUADRA-T is a chirped pulse amplification laser equipping Yb:YAG thin-disk amplifier. The Yb:YAG thin-disk regenerative amplifier at room temperature provides 10 mJ pulses at a repetition rate of 1 kHz. Duration of a recompressed pulse is 1.3 ps. By employing this picosecond pulse as a pump source, THz pulse of the center frequency of 0.3 THz with a few micro joules energy has been obtained by the optical rectification in Mg-LiNbO$$_{3}$$ crystal.

Oral presentation

1-kHz, 1-ps laser system and its applications

Ochi, Yoshihiro; Nagashima, Keisuke; Maruyama, Momoko; Tsubouchi, Masaaki; Yoshida, Fumiko; Kono, Nanase; Sugiyama, Akira

no journal, , 

We will present about specification of the 1-kHz, 1-ps laser system and its applications.

Oral presentation

Frequency up-shifter for THz light via relativistic Doppler reflection

Kono, Nanase; Itakura, Ryuji; Tsubouchi, Masaaki

no journal, , 

We realize a relativistic Doppler reflection of THz light from a counter-propagating plasma mirror in silicon (Si), and demonstrate a frequency up-shift of the reflected THz light using a practically simple method, which allows us to apply the up-shift to the THz optics. The average frequency of the reflected THz light is 1.4 times higher than that of an input THz light. The frequency up-shift is achieved by a low pump energy density (2 $$mu$$J mm$$^{-2}$$) for generating the plasma mirror, which is suitable for the application.

Oral presentation

Yb:YAG thin-disk CPA laser system for intense THz pulse generation at 1 kHz repetition rate

Ochi, Yoshihiro; Nagashima, Keisuke; Maruyama, Momoko; Tsubouchi, Masaaki; Yoshida, Fumiko; Kono, Nanase; Sugiyama, Akira

no journal, , 

We have developed a high average power picosecond laser system dedicated to intense terahertz (THz) pulse generation. The system is a chirped pulse amplification laser equipping with a Yb:YAG thin-disk amplifier. The Yb:YAG thin-disk regenerative amplifier at room temperature provides pulses with energy over 10 mJ and spectral bandwidth of 1.2 nm at a repetition rate of 1 kHz. In a pulse compressor, the laser pulse is compressed to be 1.3 ps. By employing this picosecond pulse as a pump source, THz pulses at the center frequency of 0.3 THz with energy over a few microjoules have been generated at 1 kHz repetition rate by the optical rectification in Mg-LiNbO$$_{3}$$ crystal.

Oral presentation

Frequency up-shift for THz light via relativistic Doppler reflection

Kono, Nanase

no journal, , 

We realize a relativistic Doppler reflection of terahertz (THz) light from a counter propagating plasma mirror in silicon (Si). We have focused on the dependence of pump light intensity. The up-shift frequency is increasing with pump intensity, and becoming a constant at high pump intensity. We present the interaction between the photo induced carriers and THz light.

Oral presentation

Frequency up shift for THz light via relativistic Doppler reflection

Kono, Nanase; Itakura, Ryuji; Tsubouchi, Masaaki

no journal, , 

We realize a relativistic Doppler reflection of terahertz (THz) light from a counter propagating photo-induced carrier in silicon (Si). We have observed the Doppler reflection of THz light at some different pump light intensity. The up-shift frequency was increasing with pump intensity, and becoming a constant at high pump intensity. We have defined a new parameter, effective carrier thickness, and discussed the interaction between the photo induced carriers and THz light.

Oral presentation

Relativistic Doppler reflection of THz light via photo-induced carriers in Si

Kono, Nanase; Itakura, Ryuji; Tsubouchi, Masaaki

no journal, , 

Plasma is generated when semiconductors are photo-excited, and it reflects a THz light if a density of free electrons is sufficiently high. Plasma acts as a flying mirror with a velocity which is identical to that of pump light because plasma is generated with a proceeding of pump light into a semiconductor. Then, a counter-propagating THz light is up-shifted via relativistic Doppler reflection. In this study, sample semiconductor is silicon, and we investigated a Doppler reflection of THz light by observing an intensity spectrum and waveform of THz light. From the pump energy dependence, phase and frequency shifts of THz light is increased with pump energy. We constructed a model in consideration of phase shift and Doppler reflection.

Oral presentation

Relativistic Doppler reflection of THz light via photo-induced carriers in Si

Kono, Nanase

no journal, , 

Photo-induced plasma acts as a flying mirror with a velocity which is identical to that of pump light because plasma is generated with a proceeding of pump light into a semiconductor. Then, a counter-propagating THz light is up-shifted via relativistic Doppler reflection. In this study, sample semiconductor is silicon, and we investigated a Doppler reflection of THz light by observing an intensity spectrum and waveform of THz light. From the pump energy dependence, phase and frequency shifts of THz light is increased with pump energy. We constructed a model in consideration of phase shift and Doppler reflection.

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