Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Kagei, Yusuke*; Kosono, Kohei*; Kutsuki, Katsuhiro*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
Impact of high-density plasma nitridation of 4H-SiC(0001) surface on thermally grown SiO/SiC interface structure was investigated using synchrotron radiation X-ray photoemission spectroscopy. Surface nitridation was confirmed from Si2p and N1s spectra. Both Si sub-oxide and Si sub-nitride states at SiO/SiC interface was evaluated through deconvolution of Si2p spectra. We found that the amount of Si sub-oxide states increased with the oxidation time. However, the formation of Si sub-oxides was effectively suppressed by the surface nitridation treatment prior to oxidation. Since an interface state density of Al/SiO/SiC MOS capacitor was approximately halved by the surface nitridation treatment, a generation of interface defects was considered to be caused by the Si sub-oxides formation.
Watanabe, Heiji*; Kagei, Yusuke*; Kosono, Kohei*; Kirino, Takashi*; Watanabe, Yu*; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.
no journal, ,
SiC-MOSFET's are expected for normally-off-type high performance power devices. Electrical defects due to residual inpurities such as carbon are in the interface of thermally-oxidized SiC-MOS's so that channel mobility is degraded preferentially. Although upgrade of reliability of a gate insulator is necessary for practical use, insulator degradation mechanisms have not well known yet. We are studying high quality MOS interface made by plasma nitridation techniques, upgrade of reliability and insulation by a stuck structure of a high-k insulator (AlON) layer and an SiO underlayer. Recent research results on those subjects are reported in this talk.