Refine your search:     
Report No.
 - 
Search Results: Records 1-2 displayed on this page of 2
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Oral presentation

SR-XPS analysis of SiO$$_{2}$$/SiC interfaces formed by thermal oxidation of plasma nitrided SiC surfaces

Kagei, Yusuke*; Kosono, Kohei*; Kutsuki, Katsuhiro*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

Impact of high-density plasma nitridation of 4H-SiC(0001) surface on thermally grown SiO$$_{2}$$/SiC interface structure was investigated using synchrotron radiation X-ray photoemission spectroscopy. Surface nitridation was confirmed from Si2p and N1s spectra. Both Si sub-oxide and Si sub-nitride states at SiO$$_{2}$$/SiC interface was evaluated through deconvolution of Si2p spectra. We found that the amount of Si sub-oxide states increased with the oxidation time. However, the formation of Si sub-oxides was effectively suppressed by the surface nitridation treatment prior to oxidation. Since an interface state density of Al/SiO$$_{2}$$/SiC MOS capacitor was approximately halved by the surface nitridation treatment, a generation of interface defects was considered to be caused by the Si sub-oxides formation.

Oral presentation

Improvement of SiC-MOS devices with plasma nitridation and AlON/SiO$$_{2}$$ stacked dielectrics

Watanabe, Heiji*; Kagei, Yusuke*; Kosono, Kohei*; Kirino, Takashi*; Watanabe, Yu*; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.

no journal, , 

SiC-MOSFET's are expected for normally-off-type high performance power devices. Electrical defects due to residual inpurities such as carbon are in the interface of thermally-oxidized SiC-MOS's so that channel mobility is degraded preferentially. Although upgrade of reliability of a gate insulator is necessary for practical use, insulator degradation mechanisms have not well known yet. We are studying high quality MOS interface made by plasma nitridation techniques, upgrade of reliability and insulation by a stuck structure of a high-k insulator (AlON) layer and an SiO$$_{2}$$ underlayer. Recent research results on those subjects are reported in this talk.

2 (Records 1-2 displayed on this page)
  • 1