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Journal Articles

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.414 - 417, 2014/02

https://doi.org/10.4028/www.scientific.net/MSF.778-780.414
 Times Cited Count：2 Percentile：71.09(Crystallography)

Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H$$_{2}$$ annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm$$^{2}$$/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing $$gamma$$-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by $$gamma$$-rays and the channel mobility decreases with increasing the C related defects.

Journal Articles

Electrically Detected Magnetic Resonance (EDMR) studies of SiC-SiO$$_{2}$$ interfaces

Umeda, Takahide*; Kosugi, Ryoji*; Fukuda, Kenji*; Morishita, Norio*; Oshima, Takeshi; Ezaki, Kana*; Isoya, Junichi*

Materials Science Forum, 717-720, p.427 - 432, 2012/05

https://doi.org/10.4028/www.scientific.net/MSF.717-720.427
 Times Cited Count：7 Percentile：94.59(Materials Science, Multidisciplinary)

Metal-Oxide (SiO$$_{2}$$)-Semiconductor (MOS) structures fabricated on Silicon Carbide (SiC) were studied using Electrically Detected Magnetic Resonance technique (EDMR). The residual Carbons are expected to be near the interface between SiC and SiC-SiO$$_{2}$$SiO$$_{2}$$, which is different from Si-SiO$$_{2}$$ interface. By the EDMR measurements at 50K, a defect center related to C dangling bonds which is called P$$_{H1}$$ center and also a center related to C dangling bonds terminated by hydrogens or nitrogens (Ns) which is called P$$_{H1}$$ were observed. In addition, a center related to N donor which is called Nh exist near the interface from N-treatment samples. This suggests that carrier concentration increases near the interface due to the introduction of donors, and as a result, the channel conductance increases.

Journal Articles

Behavior of nitrogen atoms in SiC-SiO$$_{2}$$ interfaces studied by electrically detected magnetic resonance

Umeda, Takahide*; Ezaki, Kana*; Kosugi, Ryoji*; Fukuda, Kenji*; Oshima, Takeshi; Morishita, Norio*; Isoya, Junichi*

Applied Physics Letters, 99(14), p.142105_1 - 142105_3, 2011/10

https://doi.org/10.1063/1.3644156
 Times Cited Count：50 Percentile：85.18(Physics, Applied)

Journal Articles

Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry

Tomioka, Yuichi*; Iida, Takeshi*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Yoshimoto, Kimihiro*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ishida, Yuki*; Kosugi, Ryoji*; et al.

Materials Science Forum, 389-393, p.1029 - 1032, 2002/00

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1029
 Times Cited Count：4 Percentile：20.07(Materials Science, Multidisciplinary)

no abstracts in English

Oral presentation

Electrically detected magnetic spectroscopy on interface defects in 4H-SiC (000-1) C-face metal-oxide-semiconductor field effect transistors

Umeda, Takahide*; Sato, Yoshihiro*; Arai, Ryo*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Roles of hydrogen and nitrogen in SiO$$_{2}$$-SiC interfaces of SiC-MOSFETs; An EDMR (electrically detected magnetic resonance) study

Umeda, Takahide*; Kosugi, Ryoji*; Fukuda, Kenji*; Oshima, Takeshi; Morishita, Norio; Ezaki, Kana*; Isoya, Junichi*

no journal, , 

no abstracts in English

Oral presentation

Electrically detected magnetic resonance study on hydrogen depassivation from C-face interface defects in 4H-SiC(000$$bar{1}$$) metal-oxide-semiconductor field effect transistors

Arai, Ryo*; Umeda, Takahide*; Sato, Yoshihiro*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

7 (Records 1-7 displayed on this page)
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