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Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi
Materials Science Forum, 778-780, p.414 - 417, 2014/02
Times Cited Count：2 Percentile：72.7(Crystallography)Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H
annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm
/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing 
-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by -rays and the channel mobility decreases with increasing the C related defects.
interfacesUmeda, Takahide*; Kosugi, Ryoji*; Fukuda, Kenji*; Morishita, Norio*; Oshima, Takeshi; Ezaki, Kana*; Isoya, Junichi*
Materials Science Forum, 717-720, p.427 - 432, 2012/05
Times Cited Count：7 Percentile：95.12(Materials Science, Multidisciplinary)Metal-Oxide (SiO)-Semiconductor (MOS) structures fabricated on Silicon Carbide (SiC) were studied using Electrically Detected Magnetic Resonance technique (EDMR). The residual Carbons are expected to be near the interface between SiC and SiC-SiOSiO, which is different from Si-SiO interface. By the EDMR measurements at 50K, a defect center related to C dangling bonds which is called P
center and also a center related to C dangling bonds terminated by hydrogens or nitrogens (Ns) which is called P were observed. In addition, a center related to N donor which is called Nh exist near the interface from N-treatment samples. This suggests that carrier concentration increases near the interface due to the introduction of donors, and as a result, the channel conductance increases.
interfaces studied by electrically detected magnetic resonanceUmeda, Takahide*; Ezaki, Kana*; Kosugi, Ryoji*; Fukuda, Kenji*; Oshima, Takeshi; Morishita, Norio*; Isoya, Junichi*
Applied Physics Letters, 99(14), p.142105_1 - 142105_3, 2011/10
Times Cited Count：50 Percentile：85.84(Physics, Applied)Tomioka, Yuichi*; Iida, Takeshi*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Yoshimoto, Kimihiro*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ishida, Yuki*; Kosugi, Ryoji*; et al.
Materials Science Forum, 389-393, p.1029 - 1032, 2002/00
Times Cited Count：4 Percentile：20.33(Materials Science, Multidisciplinary)no abstracts in English
-SiC interfaces of SiC-MOSFETs; An EDMR (electrically detected magnetic resonance) studyUmeda, Takahide*; Kosugi, Ryoji*; Fukuda, Kenji*; Oshima, Takeshi; Morishita, Norio; Ezaki, Kana*; Isoya, Junichi*
no journal, ,
no abstracts in English
Umeda, Takahide*; Sato, Yoshihiro*; Arai, Ryo*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi
no journal, ,
no abstracts in English
) metal-oxide-semiconductor field effect transistorsArai, Ryo*; Umeda, Takahide*; Sato, Yoshihiro*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi
no journal, ,
no abstracts in English
