JOPSS - Search Results

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

https://doi.org/10.1109/JPHOTOV.2011.2174198

Times Cited Count：5 Percentile：22.06(Energy & Fuels)

Oral presentation

Growth-rate dependence of polytypes in Au-assisted GaAs nanowires

Takahashi, Masamitsu; Kozu, Miwa; Hu, W.; Nakata, Yuka*

no journal, ,

no abstracts in English

Oral presentation

X-ray diffraction from polytypes in Au-assisted GaAs nanowries

Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.*; Nakata, Yuka

no journal, ,

Oral presentation

Ordered layers in AuGa droplets in contact with GaAs(111)B substrate

Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.*

no journal, ,

Oral presentation

High time-resolution three-dimensional reciprocal-space mapping during MBE growth of InGaAs

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Suzuki, Hidetoshi*; Sasaki, Takuo*

no journal, ,

Oral presentation

High-speed three-dimentional reciprocal-space mapping during MBE growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

no journal, ,

Oral presentation

In-situ X-ray diffraction during Au-assisted growth of GaAs nanowires

Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu

no journal, ,

Oral presentation

Study on crystal structure of GaAs nanowires using in situ X-ray diffraction

Kozu, Miwa*; Hu, W.; Takahashi, Masamitsu

no journal, ,

no abstracts in English

Oral presentation

In situ synchrotron X-ray diffraction analysis of structure transformation of Au-assisted GaAs nanowires

Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu

no journal, ,

no abstracts in English

Oral presentation

In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*

no journal, ,

Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, , and growth time, , were found to follow $Lpropto t^{1/2}$ in accordance with the growth limited by the binding of Ga with As at step edges.

Oral presentation

Characterization of self-assisted InAs nanowire on Si substrate during MBE growth using in-situ X-ray diffraction

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

no journal, ,

Oral presentation

In situ X-ray study on polytypism of Au-seeded GaAs nanowires grown by MBE

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo

no journal, ,

Oral presentation

In situ X-ray diffraction study of GaAs nanowire growth

Kozu, Miwa*; Hu, W.; Takahashi, Masamitsu

no journal, ,

Recently, low-dimensional structures of semiconductors have attracted much attention because of their possible novel functions originating from quantum size effects. It has been shown that free-standing semiconductor nanowires can be grown on the (111) surface of silicon and the (111)B surface of III-V semiconductors by the vapor-liquid-solid growth technique in which metal particles, such as Au, Ni and Fe, serve as catalysts. Semiconductor nanowires of GaAs and InAs are known to adopt the wurtzite structure rather than than zincblende structure which is the normal structure in their bulk crystals. In the present study, we have performed in situ X-ray diffraction study of GaAs nanowire growth on GaAs(111)B with Au catalyst. Experiments were carried out using a psic-type X-ray diffractometer integrated with an MBE chamber at BL11XU. With increasing deposition amount of GaAs, the structure of GaAs nanowires was found to transform from the zincblende to the wurtzite.

Presentation/Publication Type

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Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Mechanisms determining the structure of gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

The Physical origin of the InSb(111)A surface reconstruction transient

X-ray characterization of wurtzite formation in GaAs nanowires

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Growth-rate dependence of polytypes in Au-assisted GaAs nanowires

X-ray diffraction from polytypes in Au-assisted GaAs nanowries

Ordered layers in AuGa droplets in contact with GaAs(111)B substrate

High time-resolution three-dimensional reciprocal-space mapping during MBE growth of InGaAs

High-speed three-dimentional reciprocal-space mapping during MBE growth of InGaAs

In-situ X-ray diffraction during Au-assisted growth of GaAs nanowires

Study on crystal structure of GaAs nanowires using in situ X-ray diffraction

In situ synchrotron X-ray diffraction analysis of structure transformation of Au-assisted GaAs nanowires

In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Characterization of self-assisted InAs nanowire on Si substrate during MBE growth using in-situ X-ray diffraction

In situ X-ray study on polytypism of Au-seeded GaAs nanowires grown by MBE

In situ X-ray diffraction study of GaAs nanowire growth