Refine your search:     
Report No.
 - 
Search Results: Records 1-20 displayed on this page of 23

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo

Japanese Journal of Applied Physics, 55(4S), p.04EJ04_1 - 04EJ04_4, 2016/04

 Times Cited Count:4 Percentile:25.92(Physics, Applied)

Journal Articles

Mechanisms determining the structure of gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo; Hu, W.*

Crystal Growth & Design, 15(10), p.4979 - 4985, 2015/10

 Times Cited Count:12 Percentile:73.32(Chemistry, Multidisciplinary)

Journal Articles

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

 Times Cited Count:5 Percentile:45.92(Crystallography)

Journal Articles

X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

Journal of Physics; Conference Series, 425(20), p.202010_1 - 202010_4, 2013/03

 Times Cited Count:1 Percentile:57.77

Journal Articles

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10

 Times Cited Count:10 Percentile:70.93(Chemistry, Multidisciplinary)

Journal Articles

The Physical origin of the InSb(111)A surface reconstruction transient

Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; Fujikawa, Seiji*; Kozu, Miwa; Takahashi, Masamitsu

Surface Science, 606(17-18), p.1458 - 1461, 2012/09

 Times Cited Count:1 Percentile:5.76(Chemistry, Physical)

Journal Articles

${it In situ}$ X-ray characterization of wurtzite formation in GaAs nanowires

Krogstrup, P.*; Morten Hannibal, M.*; Hu, W.; Kozu, Miwa*; Nakata, Yuka*; Nygard, J.*; Takahashi, Masamitsu; Feidenhans'l, R.*

Applied Physics Letters, 100(9), p.093103_1 - 093103_4, 2012/02

 Times Cited Count:41 Percentile:85.51(Physics, Applied)

Journal Articles

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

 Times Cited Count:5 Percentile:25.16(Energy & Fuels)

Oral presentation

High time-resolution three-dimensional reciprocal-space mapping during MBE growth of InGaAs

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Suzuki, Hidetoshi*; Sasaki, Takuo*

no journal, , 

Oral presentation

In situ X-ray diffraction study of GaAs nanowire growth

Kozu, Miwa*; Hu, W.; Takahashi, Masamitsu

no journal, , 

Recently, low-dimensional structures of semiconductors have attracted much attention because of their possible novel functions originating from quantum size effects. It has been shown that free-standing semiconductor nanowires can be grown on the (111) surface of silicon and the (111)B surface of III-V semiconductors by the vapor-liquid-solid growth technique in which metal particles, such as Au, Ni and Fe, serve as catalysts. Semiconductor nanowires of GaAs and InAs are known to adopt the wurtzite structure rather than than zincblende structure which is the normal structure in their bulk crystals. In the present study, we have performed in situ X-ray diffraction study of GaAs nanowire growth on GaAs(111)B with Au catalyst. Experiments were carried out using a psic-type X-ray diffractometer integrated with an MBE chamber at BL11XU. With increasing deposition amount of GaAs, the structure of GaAs nanowires was found to transform from the zincblende to the wurtzite.

Oral presentation

Crystal growth dynamics studied using in situ X-ray diffraction; Zero-, one- and two-dimensional structures

Takahashi, Masamitsu; Hu, W.; Kozu, Miwa*; Sasaki, Takuo*; Oshita, Yoshio*; Suzuki, Hidetoshi*

no journal, , 

Growth dynamics of semiconductor nanostructures ranging from quantum wells to quantum dots will be discussed on the basis of in situ X-ray diffraction. Experiments were performed using a molecular-beam epitaxy (MBE) chamber integrated with an X-ray difftactometer at 11XU of SPring-8. First, of all the nanostructures, quantum wells are playing the most important roles in technological applications today. For in situ study of growth of quantum wells, we have developed a real time X-ray technique enabling three-dimensional reciprocal space mapping during growth and applied it for the investigation of InGaAs growth on GaAs(001). Second, quantum wires are recently attracting much interest because of their extremely anisotropic one-dimensional shape. In this paper, we will present in situ X-ray diffraction data during the As-assisted vapor-liquid-solid growth of GaAs nanowires. Finally, the growth of quantum dots, which are the ultimate quantum structure, will be discussed as well.

Oral presentation

High-speed three-dimentional reciprocal-space mapping during MBE growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

no journal, , 

Oral presentation

Study on crystal structure of GaAs nanowires using in situ X-ray diffraction

Kozu, Miwa*; Hu, W.; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*

no journal, , 

Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, $$L$$, and growth time, $$t$$, were found to follow $$Lpropto t^{1/2}$$ in accordance with the growth limited by the binding of Ga with As at step edges.

Oral presentation

In-situ X-ray diffraction during Au-assisted growth of GaAs nanowires

Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu

no journal, , 

Oral presentation

Characterization of self-assisted InAs nanowire on Si substrate during MBE growth using in-situ X-ray diffraction

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

no journal, , 

Oral presentation

In situ synchrotron X-ray diffraction analysis of structure transformation of Au-assisted GaAs nanowires

Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

In situ X-ray diffraction study of GaAs growth on Si

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Oshita, Yoshio*

no journal, , 

Oral presentation

Crystal structure change at the time of GaAs nanowire growth interruption

Kozu, Miwa; Takahashi, Masamitsu; Hu, W.; Nakata, Yuka*

no journal, , 

no abstracts in English

Oral presentation

Growth-rate dependence of polytypes in Au-assisted GaAs nanowires

Takahashi, Masamitsu; Kozu, Miwa; Hu, W.; Nakata, Yuka*

no journal, , 

no abstracts in English

23 (Records 1-20 displayed on this page)