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Journal Articles

Investigation of single-event damages on silicon carbide (SiC) power MOSFETs

Mizuta, Eiichi*; Kuboyama, Satoshi*; Abe, Hiroshi; Iwata, Yoshiyuki*; Tamura, Takashi*

IEEE Transactions on Nuclear Science, 61(4), p.1924 - 1928, 2014/08

 Times Cited Count:81 Percentile:99.17(Engineering, Electrical & Electronic)

Journal Articles

Applicability of redundant pairs of SOI transistors for analog circuits and their applications to phase-locked loop circuits

Makihara, Akiko*; Yokose, Tamotsu*; Tsuchiya, Yoshihisa*; Miyazaki, Yoshio*; Abe, Hiroshi; Shindo, Hiroyuki*; Ebihara, Tsukasa*; Maru, Akifumi*; Morikawa, Koichi*; Kuboyama, Satoshi*; et al.

IEEE Transactions on Nuclear Science, 60(1), p.230 - 235, 2013/02

 Times Cited Count:6 Percentile:44.21(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Applicability of redundant pairs of SOI transistors for analog circuits

Makihara, Akiko*; Yokose, Tamotsu*; Tsuchiya, Yoshihisa*; Tani, Koichi*; Morimura, Tadaaki*; Abe, Hiroshi; Shindo, Hiroyuki*; Ebihara, Tsukasa*; Maru, Akifumi*; Morikawa, Koichi*; et al.

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.119 - 122, 2012/12

no abstracts in English

Journal Articles

Consideration of single-event gate rupture mechanism in power MOSFET

Kuboyama, Satoshi*; Mizuta, Eiichi*; Ikeda, Naomi*; Abe, Hiroshi; Oshima, Takeshi; Tamura, Takashi*

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.138 - 141, 2012/12

no abstracts in English

Journal Articles

Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

Kuboyama, Satoshi*; Maru, Akifumi*; Ikeda, Naomi*; Hirao, Toshio; Tamura, Takashi*

IEEE Transactions on Nuclear Science, 57(6), p.3257 - 3261, 2010/12

 Times Cited Count:16 Percentile:72.46(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

DICE-based flip-flop with SET pulse discriminator on a 90 nm bulk CMOS process

Maru, Akifumi*; Shindo, Hiroyuki*; Ebihara, Tsukasa*; Makihara, Akiko*; Hirao, Toshio; Kuboyama, Satoshi*

IEEE Transactions on Nuclear Science, 57(6), p.3602 - 3608, 2010/12

 Times Cited Count:11 Percentile:62.45(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

Ikeda, Naomi*; Kuboyama, Satoshi*; Maru, Akifumi*; Hirao, Toshio; Abe, Hiroshi; Tamura, Takashi*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.163 - 166, 2010/10

The trench structure showed an anomalously large degradation by heavy ion irradiation. For the trench structure, ions irradiated normal to the chip surface traverse the gate oxide along the entire length of the channel. Therefore, there is a possibility that the trapped holes resulting from the ion traverse introduce the anomalously large leakage current path. This phenomenon is apparently attributable to the microdose effect. In the previous report, the microdose effect was identified on both trench and planner type of power MOSFETs by real-time measurement of the threshold voltage shift during the heavy ion irradiation with very long range. In this study, detailed characterization of the microdose effects was carried out with several in species. As a result, several damage parameters introduced in the gate oxide by a single ion, such as physical damage size and trapped hole density in the damage region were estimated.

Journal Articles

DICE based flip-flop with SET pulse discriminator on a 90 nm bulk CMOS process

Maru, Akifumi*; Kuboyama, Satoshi*; Shindo, Hiroyuki*; Ebihara, Tsukasa*; Makihara, Akiko*; Hirao, Toshio; Tamura, Takashi*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.64 - 67, 2010/10

no abstracts in English

Journal Articles

Evaluation of element circuits constructing new radiation hardened SOI FPGAs

Shindo, Hiroyuki*; Midorikawa, Masahiko*; Sato, Yohei*; Kuboyama, Satoshi*; Hirao, Toshio; Oshima, Takeshi

JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 5, 2008/11

no abstracts in English

Journal Articles

Optimization for SEU/SET immunity on 0.15 $$mu$$m fully depleted CMOS/SOI digital logic devices

Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10

no abstracts in English

Journal Articles

Bulk damage observed in recent LSI devices

Shindo, Hiroyuki*; Kuboyama, Satoshi*; Ikeda, Naomi*; Otomo, Hiromitsu*; Shimada, Osamu*; Hirao, Toshio; Matsuda, Sumio*

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.63 - 66, 2004/10

no abstracts in English

Journal Articles

Improved model for single-event burnout mechanism

Kuboyama, Satoshi*; Ikeda, Naomi*; Hirao, Toshio; Matsuda, Sumio*

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.165 - 168, 2004/10

no abstracts in English

Journal Articles

Radiation damages of InGaAs photodiodes by high-temperature electron irradiation

Oyama, Hidenori*; Takakura, Kenichiro*; Nakabayashi, Masakazu*; Hirao, Toshio; Onoda, Shinobu; Kamiya, Tomihiro; Simoen, E.*; Claeys, C.*; Kuboyama, Satoshi*; Oka, Katsumi*; et al.

Nuclear Instruments and Methods in Physics Research B, 219-220, p.718 - 721, 2004/06

 Times Cited Count:3 Percentile:24.93(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Bulk damage caused by single protons in SDRAMs

Shindo, Hiroyuki*; Kuboyama, Satoshi*; Ikeda, Naomi*; Hirao, Toshio; Matsuda, Sumio*

IEEE Transactions on Nuclear Science, 50(6, Part1), p.1839 - 1845, 2003/12

 Times Cited Count:15 Percentile:72.83(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs

Kuboyama, Satoshi*; Shindo, Hiroyuki*; Hirao, Toshio; Matsuda, Sumio*

IEEE Transactions on Nuclear Science, 49(6), p.2684 - 2689, 2002/12

 Times Cited Count:10 Percentile:54.94(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Research of single-event burnout in bipolar transistors

Hirao, Toshio; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Nagai, Yuki*; Ohira, Hideharu*; Ito, Hisayoshi; Matsuda, Sumio*

JNC TN7200 2001-001, p.66 - 68, 2002/01

no abstracts in English

Journal Articles

Mechanism for single-event burnout of bipolar transistors

Kuboyama, Satoshi*; Suzuki, Takahiro*; Hirao, Toshio; Matsuda, Sumio*

IEEE Transactions on Nuclear Science, 47(6), p.2634 - 2639, 2000/12

 Times Cited Count:7 Percentile:46.89(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Analysis of single-ion multiple-bit upset in high-density DRAMs

Makihara, Akiko*; Shindo, Hiroyuki*; Nemoto, Norio*; Kuboyama, Satoshi*; Matsuda, Sumio*; Oshima, Takeshi; Hirao, Toshio; Ito, Hisayoshi; Buchner, S.*; Campbell, A. B.*

IEEE Transactions on Nuclear Science, 47(6), p.2400 - 2404, 2000/12

 Times Cited Count:33 Percentile:87.39(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Analysis of single-ion multiple-bit upset in high-density DRAMs

Makihara, Akiko*; Shindo, Hiroyuki*; Nemoto, Norio*; Kuboyama, Satoshi*; Matsuda, Sumio*; Oshima, Takeshi; Hirao, Toshio; Ito, Hisayoshi; Buchner, S.*; Campbell, A. B.*

Proceedings of 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.103 - 107, 2000/00

no abstracts in English

Journal Articles

The Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

Saido, Masahiro; Fukuda, Mitsuhiro; Arakawa, Kazuo; Tajima, Satoshi; Sunaga, Hiromi; Yotsumoto, Keiichi; Kamiya, Tomihiro; Tanaka, Ryuichi; Hirao, Toshio; Nashiyama, Isamu; et al.

Proceedings of 1999 IEEE Nuclear and Space Radiation Effects Conference, p.117 - 122, 1999/00

no abstracts in English

31 (Records 1-20 displayed on this page)