Comparison of chemical bonding structure at SiN/Si interface fabricated using atmospheric pressure plasma and RF plasma

Hayakawa, Ryoma*; Nakae, Mari*; Yoshida, Shinji*; Tagawa, Masahito*; Teraoka, Yuden; Yoshimura, Takeshi*; Ashida, Atsushi*; Kunugi, Shunsuke*; Uehara, Tsuyoshi*; Fujimura, Norifumi*

no journal, , 

Chemical bonding states of silicon nitride films formed by an atmospheric plasma method and a RF plasma method were analyzed by photoemission spectroscopy with synchrotron radiation and compared each other. The SiN/Si(111) interface formed by the RF plasma method consisted of 5 components. On the other hand, the SiN/Si(111) interface formed by the atmospheric plasma method consisted of 4 components. The SiN component is in the interface formed by the RF plasma method.