JOPSS - Search Results

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04

https://doi.org/10.1016/j.nima.2005.01.062

Times Cited Count：9 Percentile：55.13(Instruments & Instrumentation)

In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.

Journal Articles

Analysis of transient ion beam induced current in Si PIN Photodiode

Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Kamiya, Tomihiro

Nuclear Instruments and Methods in Physics Research B, 231(1-4), p.497 - 501, 2005/04

https://doi.org/10.1016/j.nimb.2005.01.106

Times Cited Count：3 Percentile：29.85(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Anomalous gain mechanisms during single ion hit in avalanche photodiodes

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Oyama, Hidenori*; Kamiya, Tomihiro

JAERI-Review 2004-025, TIARA Annual Report 2003, p.14 - 16, 2004/11

https://jopss.jaea.go.jp/pdfdata/JAERI-Review-2004-025-p0001-p0116.pdf

no abstracts in English

Journal Articles

Effect of damage on transient current waveform observed in GaAs schottky diode by single ion hit

Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Wakasa, Takeshi; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.187 - 189, 2004/10

no abstracts in English

Journal Articles

Analysis of transient current induced in silicon carbide diodes by oxygen-ion microbeams

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10

no abstracts in English

Journal Articles

Charge collected in Si MOS capacitors and SOI devices p $^{+}$ n diodes due to heavy ion irradiation

Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10

no abstracts in English

Journal Articles

Time-resolved laser and ion microbeam studies of single event transients in high-speed optoelectronic devices

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Kamiya, Tomihiro; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.125 - 129, 2004/10

no abstracts in English

Journal Articles

Evaluation of transient current induced by high energy charged particles in Si PIN photodiode

Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Wakasa, Takeshi; Yamakawa, Takeshi; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Kamiya, Tomihiro; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.173 - 176, 2004/10

no abstracts in English

Journal Articles

The Role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu*; Kamiya, Tomihiro

Nuclear Instruments and Methods in Physics Research B, 219-220, p.1015 - 1021, 2004/06

https://doi.org/10.1016/j.nimb.2004.01.206

Times Cited Count：7 Percentile：44.26(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Irradiation induced degradation of high-speed response of Si $p^{+}$ -- $n^{+}$ photodiodes studied by pulsed laser measurements

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi

IEEE Transactions on Nuclear Science, 50(6, Part1), p.2003 - 2010, 2003/12

https://doi.org/10.1109/TNS.2003.820734

Times Cited Count：10 Percentile：55.40(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Degradation of Si high-speed photodiodes by irradiation induced defects and restoration at low temperature

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Kamiya, Tomihiro

Proceedings of 3rd IEEE/LEOS International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (NUSOD '03), 2 Pages, 2003/10

https://doi.org/10.1109/NUSOD.2003.1263225

no abstracts in English

Journal Articles

Observation of single-ion induced charge collection in diode by a heavy ion microbeam system

Kamiya, Tomihiro; Oikawa, Masakazu*; Oshima, Takeshi; Hirao, Toshio; Lee, K. K.; Onoda, Shinobu*; Laird, J. S.

Nuclear Instruments and Methods in Physics Research B, 210, p.206 - 210, 2003/09

https://doi.org/10.1016/S0168-583X(03)01071-1

Times Cited Count：1 Percentile：12.34(Instruments & Instrumentation)

no abstracts in English

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Current transient effect in N-channel 6H-SiC MOSFET induced by heavy ion irradiation

The Role of ion track structure on high-injection carrier dynamics in high-speed Si and III-V optoelectronic sensers

Effects of and heavy ion damage on the impulse response and pulsed gain of a low breakdown voltage Si avalanche photodiode

Transient currents generated by heavy ions with hundreds of MeV

Comparison of above bandgap laser and MeV ion induced single event transients in high-speed Si photonic devices

Effects of and heavy ion damage on the time-resolved gain of a low breakdown voltage Si avalanche photodiode

Heavy ion and pulsed laser SET measurements in ultrahigh speed MSM GaAs photodetectors

High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors

Characterization of charge generated in silicon carbide n $^{+}$ p diodes using transient ion beam-induced current

Analysis of transient ion beam induced current in Si PIN Photodiode

Anomalous gain mechanisms during single ion hit in avalanche photodiodes

Effect of damage on transient current waveform observed in GaAs schottky diode by single ion hit

Analysis of transient current induced in silicon carbide diodes by oxygen-ion microbeams

Charge collected in Si MOS capacitors and SOI devices p $^{+}$ n diodes due to heavy ion irradiation

Time-resolved laser and ion microbeam studies of single event transients in high-speed optoelectronic devices

Evaluation of transient current induced by high energy charged particles in Si PIN photodiode

The Role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors

Irradiation induced degradation of high-speed response of Si $p^{+}$ -- $n^{+}$ photodiodes studied by pulsed laser measurements

Degradation of Si high-speed photodiodes by irradiation induced defects and restoration at low temperature

Observation of single-ion induced charge collection in diode by a heavy ion microbeam system