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Journal Articles

Quantum-well solar cells for space; The Impact of carrier removal on end-of-life device performance

Hoheisel, R.*; Gonz$'a$lez, M.*; Lumb, M.*; Scheiman, D.*; Messenger, S. R.*; Bailey, C. G.*; Lorentzen, J.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; et al.

IEEE Journal of Photovoltaics, 4(1), p.253 - 259, 2014/01

 Times Cited Count:16 Percentile:58.56(Energy & Fuels)

Analysis on the radiation response of solar cells with multi quantum wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. We found that in the case of MQW devices, carrier removal (CR) effects are also observed. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can cause the initially quasi-intrinsic background doping of the MQW region to become specifically n- or p-type. This can result in a significant narrowing and even the collapse of the electric field between the emitter and the base where the MQWs are located. The implications of the CR-induced modification of the electric field on the current-voltage characteristics and on the collection efficiency of carriers generated within the emitter, the MQW region, and the base are discussed for different radiation dose conditions. This paper concludes with a discussion of improved radiation hard MQW device designs.

Journal Articles

Radiation study in quantum well III-V multi-junction solar cells

Gonz$'a$lez, M.*; Hoheisel, R.*; Lumb, M.*; Scheiman, D.*; Bailey, C. G.*; Lorentzen, J.*; Maximenko, S.*; Messenger, S. R.*; Jenkins, P. P.*; Tibbits, T. N. D.*; et al.

Proceedings of 39th IEEE Photovoltaic Specialists Conference (PVSC-39) (CD-ROM), p.3233 - 3236, 2013/06

The radiation response of multi quantum wall (MQW) triple junction and component cells was analyzed. Initial results show that for 1MeV electron irradiation the middle MQW cell governs the degradation of the triple junction. This is attributed the specific middle cell design, in particular the thick 0.98 $$mu$$m depletion region, and alternative, more radiation hard, designs are presented. Additionally, characterization studies, including dark IV, external quantum efficiency, electroluminescence, as well as defect characterization were investigated.

Journal Articles

In situ irradiation and measurement of triple junction solar cells at Low Intensity, Low Temperature (LILT) conditions

Harris, R. D.*; Imaizumi, Mitsuru*; Walters, R. J.*; Lorentzen, J. R.*; Messenger, S. R.*; Tischler, J. G.*; Oshima, Takeshi; Sato, Shinichiro; Sharps, R. P.*; Fatemi, N. S.*

IEEE Transactions on Nuclear Science, 55(6), p.3502 - 3507, 2008/12

 Times Cited Count:8 Percentile:51.34(Engineering, Electrical & Electronic)

The performance of triple junction InGaP/GaAs/Ge solar cells have been studied following low temperature irradiation while using low intensity illumination. High energy electron and proton irradiations have been performed with cell characterization carried out in situ at the irradiation temperature with no intermediate temperature changes. As such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements which permitted the extraction of the four principle solar cell parameters: short circuit current, open circuit voltage, maximum power, and fill factor. In addition, quantum efficiency measurements were made prior to and following the irradiations. The low temperature irradiations were followed by a room temperature anneal to determine if any subsequent recovery was present.

Journal Articles

Irradiation and measurement of GaAs based solar cells at low intensity, low temperature (LILT) conditions

Walters, R. J.*; Harris, R. D.*; Imaizumi, Mitsuru*; Lorentzen, J. R.*; Messenger, S. R.*; Tischler, J. G.*; Oshima, Takeshi; Sato, Shinichiro; Sharps, R. P.*; Fatemi, N. S.*

Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.105 - 108, 2008/12

The performance of triple junction InGaP/GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out ${it in situ}$ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation.

Oral presentation

Quantum well solar cells for space; The Impact of carrier removal on end-of-life device performance

Hoheisel, R.*; Gonz$'a$lez, M.*; Lumb, M.*; Scheiman, D.*; Messenger, S. R.*; Bailey, C. G.*; Lorentzen, J.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; et al.

no journal, , 

In this paper a detailed analysis on the radiation response of solar cells with multi quantum-wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. Whilst the primary source of radiation damage of photovoltaic devices is generally associated with minority carrier lifetime reduction, we found that in the case of MQW devices another effect of radiation damage, the so called carrier removal (CR) requires additional consideration. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can alter the initially quasi-intrinsic background doping of the MQW region to become further n or p type. This can result in a significant narrowing and even in a collapse of the electrical field between the emitter and the base where the MQWs are located. Eventually, remarks for improved radiation hard MQW device designs are provided.

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