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Journal Articles

EPR and ${it ab initio}$ calculation study on the EI4 center in 4$$H$$- and 6$$H$$-SiC

Carlsson, P.*; Son, N. T.*; Gali, A.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Magnusson, B.*; Janz$'e$n, E.*

Physical Review B, 82(23), p.235203_1 - 235203_11, 2010/12

 Times Cited Count:7 Percentile:62.79(Materials Science, Multidisciplinary)

Electron Paramagnetic Resonance (EPR) studies of the EI4 center in 4$$H$$- and 6$$H$$-Silicon Carbide (SiC) were carried out. The EI4 center was drastically enhanced in electron-irradiated high-purity semi-insulating materials by annealing at 700-750 $$^{circ}$$C. An additional large-splitting $$^{29}$$Si hf structure and $$^{13}$$C hf lines of the EI4 defect were observed. Comparing the data obtained from the hf interactions and the annealing behavior, and also from ${it ab initio}$ supercell calculations of different carbon-vacancy-related complexes, we propose a complex between a carbon vacancy-carbon antisite and a carbon vacancy at the third-neighbor site of the antisite in the neutral charge state, (V$$_{C}$$-C$$_{Si}$$V$$_{C}$$)$$^{0}$$, as a new defect model for the EI4 center.

Journal Articles

The Carbon vacancy related EI4 defect in 4H SiC

Son, N. T.*; Carlsson, P.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Magnusson, B.*; Janz$'e$n, E.*

Materials Science Forum, 645-648, p.399 - 402, 2010/00

Defects in high-purity semi-insulating 4H SiC irradiated with 2 MeV electrons at room temperature were studied using Electron paramagnetic resonance (EPR). The EPR signal named EI4 defect increased with annealing temperature up to 750 $$^{circ}$$C. Additional large-splitting $$^{29}$$Si hyperfine (hf) structures and $$^{13}$$C hf lines by the interaction with one $$^{13}$$C nucleus were investigated. Based on the observed hf structures, the C$$_{1h}$$ symmetry as well as the annealing behaviour, the EI4 defects is determined to be the complex between two carbon vacancies and a carbon antisite in the neutral charge state, V$$_{C}$$V$$_{C}$$C$$_{Si}$$$$^{0}$$. The formation of the complex is interpreted in terms of the migration of the silicon vacancy and the formation of the carbon vacancy-carbon antisite pair next to a carbon vacancy.

Journal Articles

Identification of divacancies in 4H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Physica B; Condensed Matter, 376-377, p.334 - 337, 2006/04

 Times Cited Count:3 Percentile:80.94(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Divacancy model for P6/P7 centers in 4H- and 6H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Materials Science Forum, 527-529, p.527 - 530, 2006/00

no abstracts in English

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