Performance study of a new LiCAF:Ce detector developed for high-efficient neutron detection in intense -ray fields

Kaburagi, Masaaki; Kamada, Kei*; Ishii, Junya*; Matsumoto, Tetsuro*; Manabe, Seiya*; Masuda, Akihiko*; Harano, Hideki*; Kato, Masahiro*; Shimazoe, Kenji*

Journal of Instrumentation (Internet), 19(11), p.P11019_1 - P11019_16, 2024/11

https://doi.org/10.1088/1748-0221/19/11/P11019

Measurement of single-event upsets in 65-nm SRAMs under irradiation of spallation neutrons at J-PARC MLF

Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Ito, Kojiro*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro; Harada, Masahide; Oikawa, Kenichi; Miyake, Yasuhiro*

IEEE Transactions on Nuclear Science, 67(7), p.1599 - 1605, 2020/07

https://doi.org/10.1109/TNS.2020.2978257

Soft errors induced by terrestrial radiation in semiconductor devices have been of concern from the viewpoint of their reliability. Generally, to evaluate the soft error rates (SERs), neutron irradiation tests are performed at neutron facility. We have performed SER measurement for the 65-nm bulk SRAM and the FDSOI SRAM at RCNP in Osaka University and CYRIC in Tohoku University. In this study, we performed SER measurement for the same devices at BL10 in J-PARC MLF. The increasing rate of SER by reducing the supply voltage at J-PARC BL10 is larger than those obtained at RCNP and CYRIC. From PHITS simulation, the cause of this difference can be explained by the influence of the protons generated by neutron elastic scattering with hydrogen atoms in the package resin.

Impact of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets

Abe, Shinichiro; Sato, Tatsuhiko; Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Ito, Kojiro*; Hashimoto, Masanori*; Harada, Masahide; Oikawa, Kenichi; et al.

Proceedings of IEEE International Reliability Physics Symposium (IRPS 2020) (Internet), 6 Pages, 2020/04

https://doi.org/10.1109/IRPS45951.2020.9128951

Single event upsets (SEUs) caused by neutrons have been recognized as a serious reliability problem for microelectronic devices on the ground level. In our previous work, it was found that hydride placed in front of the memory chip has considerably impact on SEU cross sections because H ions generated via elastic scattering of neutrons with hydrogen atoms are only emitted in a forward direction. In this study, the effect of components neighboring transistors on neutron-induced SEUs was investigated for 65-nm bulk SRAMs by using PHITS. It was found that the shape of the SEU cross section around few MeV comes from the thickness and the position of components placed in front of transistors when that components do not contains hydrogen atoms. By considering components adjoin memory cells in the test board used in the simulation, measured data at J-PARC BL10 were reproduced well. In addition, it was found that the effect of components neighboring transistors on neutron-induced SERs does not negligible in terrestrial environment.

Impact of irradiation side on neutron-induced single-event upsets in 65-nm Bulk SRAMs

Abe, Shinichiro; Liao, W.*; Manabe, Seiya*; Sato, Tatsuhiko; Hashimoto, Masanori*; Watanabe, Yukinobu*

IEEE Transactions on Nuclear Science, 66(7, Part 2), p.1374 - 1380, 2019/07

https://doi.org/10.1109/TNS.2019.2902176

Single event upsets (SEUs) caused by secondary cosmic-ray neutrons have recognized as a serious reliability problem for microelectronic devices. Acceleration tests at neutron facilities are convenient to validate soft error rates (SERs) quickly, but some corrections caused from measurement conditions are required to derive realistic SERs at actual environment or to compare other measured data. In this study, the effect of irradiation side on neutron-induced SEU cross sections was investigated by performing neutron transport simulation using PHITS. SERs for 65-nm bulk CMOS SRAMs are estimated using the sensitive volume model. It was found from simulation that SERs for the sealant side irradiation are 30-50% larger than those for the board side irradiation. This difference comes from the difference of production yield and angular distribution of secondary H and He ions, which are the main cause of SEUs. Thus the direction of neutron irradiation should be reported when the result of acceleration tests are published. This result also indicates that SERs can be reduced by equipping device with sealant side facing downward.

Negative and positive muon-induced single event upsets in 65-nm UTBB SOI SRAMs

Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Abe, Shinichiro; Hamada, Koji*; Tampo, Motonobu*; et al.

IEEE Transactions on Nuclear Science, 65(8), p.1742 - 1749, 2018/08

https://doi.org/10.1109/TNS.2018.2839704

Recently, the malfunction of microelectronics caused by secondary cosmic-ray muon is concerned as semiconductor devices become sensitive to radiation. In this study, we have performed muon irradiation testing for 65-nm ultra-thin body and thin buried oxide (UTBB-SOI) SRAMs in the Japan Proton Accelerator Research Complex (J-PARC), in order to investigate dependencies of single event upset (SEU) cross section on incident muon momentum and supply voltage. It was found that the SEU cross section by negative muon are approximately two to four times larger than those by positive muon in the momentum range from 35 MeV/c to 39 MeV/c. The supply voltage dependence of muon-induced SEU cross section was measured with the momentum of 38 MeV/c. SEU cross sections decrease with increasing supply voltage, but the decreasing of SEU cross section by negative muon is gentler than that by positive muon. Experimental data of positive and negative muon irradiation with the momentum of 38 MeV/c were analyzed by PHITS. It was clarified that the negative muon capture causes the difference between the SEU cross section by negative muon and that by positive muon.

Measurement of Cu-63(n,p)Ni-63 production cross section, 1; Measurement of spatial distribution of thermal neutron irradiation dose in irradiation capsule using activation of gold

Nakasone, Shunya*; Yoshii, Taiki*; Shibuya, Kengo*; Yunoki, Akira*; Sakai, Hirotaka*; Shimada, Taro; Manabe, Seiya*; Matsumoto, Tetsuro*

no journal, , 

Cable has become subject to clearance since the revision of the clearance regulations. Ni-63, a nuclide that is difficult to measure, is produced by the activation of copper in cables. When calculating the amount of Ni-63 produced, the activation cross section in the thermal neutron region differs by a factor of about 6 between nuclear data libraries, so that accurate activation calculations have not been possible. Therefore, the purpose of this study is to improve the accuracy of the calculation of Cu activation and to estimate the reaction cross section of Cu-63(n,p)Ni-63 in the thermal neutron region with good accuracy based on actual measurements. In this presentation, the uncertainty of the thermal neutron fluence contributing to the Cu activation was evaluated using Au-198 after neutron irradiation at JRR-3 in JAEA. High-purity gold and copper samples were placed alternately, and the entire sample was packaged in aluminum foil and sealed in an irradiation capsule, which was placed at the bottom of JRR-3 HR-2 with the capsule lid facing upward. Three irradiation capsules were prepared and irradiated with neutrons for 10, 20, and 30 minutes, respectively. About 50 days after irradiation, the radioactivity was measured using a Ge semiconductor detector. The results showed that the radioactivity per unit mass of gold samples irradiated in each irradiation was the highest in the sample placed at the top of the capsule and decreased by 68% toward the bottom of the capsule. This trend is reasonable. The average value of the thermal neutron fluence rate for all samples was 7 10 cm s. These results confirm that the thermal neutron fluence can be determined with an accuracy on the order of percent.