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Oshima, Takeshi; Yamamoto, Takashi; Onoda, Shinobu; Abe, Hiroshi; Sato, Shinichiro; Jahnke, K.*; Heller, P.*; Gerstmayr, A.*; Hussler, A.*; Naydenov, B.*; et al.
no journal, ,
Negatively charged nitrogen-vacancy (NV) centers were created in high quality IIa diamonds by nitrogen (N) implantation. To identify implanted N atoms and their incident position, micro ion beams of N (natural abundance 0.37%) were applied. Since the reduction of C affects an increase in T, N implantation into a CVD diamond with high purity of C (99.99%) was carried out. As a result, the value of T for both NV and NV centers (NV centers are created from N atoms originally existing in the diamond and vacancy introduced by implantation after annealing) was obtained to be about 2 ms. By optically detected magnetic resonance (ODMR) measurements, the creation yield of both NV and NV was estimated.
Yamamoto, Takashi; Onoda, Shinobu; Oshima, Takeshi; Teraji, Tokuyuki*; Watanabe, Kenji*; Taniguchi, Takashi*; Koizumi, Satoshi*; Umeda, Takahide*; Isoya, Junichi*; McGuinness, L.*; et al.
no journal, ,
no abstracts in English