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Zn
Y
alloy using X-ray photoelectron spectroscopyMiyazaki, Hidetoshi*; Akatsuka, Tatsuyoshi*; Kimura, Koji*; Egusa, Daisuke*; Sato, Yohei*; Itakura, Mitsuhiro; Takagi, Yasumasa*; Yasui, Akira*; Ozawa, Kenichi*; Mase, Kazuhiko*; et al.
Materials Transactions, 64(6), p.1194 - 1198, 2023/06
Times Cited Count：1 Percentile：18.99(Materials Science, Multidisciplinary)We investigated the electronic structure of the MgZnY alloy using hard and soft X-ray photoemission spectroscopy and electronic band structure calculations to understand the mechanism of the phase stability of this material. Electronic structure of the MgZnY alloy showed a semi-metallic electronic structure with a pseudo-gap at the Fermi level. The observed electronic structure of the MgZnY alloy suggests that the presence of a pseudogap structure is responsible for phase stability.
Takahashi, Yoshio*; Fan, Q.*; Suga, Hiroki*; Tanaka, Kazuya; Sakaguchi, Aya*; Takeichi, Yasuo*; Ono, Kanta*; Mase, Kazuhiko*; Kato, Kenji*; Kanivets, V. V.*
Scientific Reports (Internet), 7(1), p.12407_1 - 12407_11, 2017/09
Times Cited Count：30 Percentile：67.24(Multidisciplinary Sciences)We focused on factors controlling partition of radiocesium on particulate matters and sediments in rivers of Fukushima and Chernobyl. Radiocesium is more soluble in the Pripyat River (Chernobyl) due to weaker interaction of radiocesium with clay minerals caused by the inhibition effect of the adsorbed humic substances. In contrast, particulate matters and sediments in the Kuchibuto River (Fukushima) display high adsorption affinity with lesser inhibition effect of adsorbed humic substances. This difference is possibly governed by the geology and soil type of provenances surrounding both catchments.
Toyoshima, Hiroaki*; Hiraga, Kenta*; Ono, Shinya*; Tanaka, Masatoshi*; Ozawa, Kenichi*; Mase, Kazuhiko*; Hirao, Norie; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Baba, Yuji
Photon Factory Activity Report 2011, Part B, P. 102, 2012/00
The knowledge of the interaction between organic molecules and semiconductor surfaces plays an important role in adapting organic semiconductors into the semiconductor technology. In the present study, the process of 
-sexithiophene (-6T) thin layer formation on passivated silicon (Si) surfaces has been investigated in-situ by means of PES, angle-depended NEXAFS (near-edge X-ray absorption fine-structure), SDRS, and RDS. For water-adsorbed Si(001), it was found that the majority of -6T molecules are standing on the substrate. Above 3 nm, most of molecules are standing and constitute well ordered islands or films. For ethylene adsorbed Si(001) on the contrary, some of -6T molecules are flat-lying, resulting in less prominent orientation. Thus, the orientation of molecules depends on the method of passivation, which opens the possibility of controlling the molecular orientation by the surface modification.
Yamagishi, Akihiko*; Yokobori, Shinichi*; Hashimoto, Hirofumi*; Yano, Hajime*; Imai, Eiichi*; Okudaira, Kyoko*; Kawai, Hideyuki*; Kobayashi, Kensei*; Tabata, Makoto*; Nakagawa, Kazumichi*; et al.
no journal, ,
no abstracts in English
2 single domain surface studied by low energy electron diffraction and electron spectroscopyKakiuchi, Takuhiro*; Katsuragi, Takuma*; Nakano, Yuji*; Yoshigoe, Akitaka; Nagaoka, Shinichi*; Mase, Kazuhiko*
no journal, ,
HfO
has been becoming important as a future dielectric material for future metal-oxide-semiconductor devices. In this study, surface structure, surface chemical state, and valence electronic structure after oxidation of single domain Si(110)-162 surface have precisely measured by using low-energy-electron diffraction and synchrotron radiation photroemission spectroscopy. It was found that five possible adsorption sites (SC1-SC5) of the single domain Si(110)-162 surface are uniformely reacted with Hf atoms with increasing its exposure, indicating that random Hf adsorption takes place on the surface.
