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Kakiuchi, Takuhiro*; Matoba, Tomoki*; Koyama, Daisuke*; Yamamoto, Yuki*; Yoshigoe, Akitaka
Langmuir, 38(8), p.2642 - 2650, 2022/03
Times Cited Count：1 Percentile：13.58(Chemistry, Multidisciplinary)0xidation processes at the interface and the surface of Si(111) substrate with thin Hf films were studied using photoelectron spectroscopy in conjunction with supersonic oxygen molecular beams (SOMB). The oxidation starts at the outermost Hf layers and produces stoichiometric HfO
. Hf silicates (Hf-O-Si configuration) were generated in the vicinity of the HfO/Si interface in the case of the irradiation of 2.2 eV SOMB. The oxidation of the Si substrate takes place to generate SiO compounds. Si atoms were emitted from the SiO/Si interface region underneath the HfO overlayers to release the stress generated within the strained Si layers. The emitted Si atoms can pass through the HfO overlayers and react with the impinging O gas.
7 surface using high-resolution core-level photoelectron spectroscopyKakiuchi, Takuhiro*; Matoba, Tomoki*; Koyama, Daisuke*; Yamamoto, Yuki*; Kato, Daiki*; Yoshigoe, Akitaka
Surface Science, 701, p.121691_1 - 121691_8, 2020/11
Times Cited Count：1 Percentile：5.82(Chemistry, Physical)Ultrathin hafnium films on Si(111)-77 were studied using synchrotron radiation photoelectron spectroscopies to reveal the chemical states at interface and surface. Ultrathin Hf layers grow on clean Si(111)-77 surface by lever rule. Surface and interface of Hf/Si(111) contain three components (metallic Hf layers, Hf monosilicide (HfSi) and Si-rich Hf silicide). Ultrathin Hf layers changes HfSi islands on bared Si(111)-77 surface after annealing at 1073 K. It was found that the long axes of the rectangle islands expand the direction connecting the corner holes in DAS model of clean Si(111)-77 surface.
