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Journal Articles

Strain analysis of thermoelectric materials using high-resolution synchrotron X-ray diffraction data

Nakasawa, Hayato*; Shobu, Takahisa; Tominaga, Aki; Fujii, Masashi*; Matsumoto, Hironari*; Matsuda, Michiko*; Shimada, Takeshi*; Trivedi, V.*; Tachibana, Makoto*; Tsujii, Naohito*; et al.

Funtai Oyobi Fummatsu Yakin, 72(Suppl.), p.S997 - S1001, 2025/03

https://doi.org/10.2497/jjspm.15P-T21-07

Journal Articles

Step unbunching phenomenon on 4H-SiC (0001) surface during hydrogen etching

Sakakibara, Ryotaro*; Bao, J.*; Yuhara, Keisuke*; Matsuda, Keita*; Terasawa, Tomoo; Kusunoki, Michiko*; Norimatsu, Wataru*

Applied Physics Letters, 123(3), p.031603_1 - 031603_4, 2023/07

https://doi.org/10.1063/5.0153565
 Times Cited Count：9 Percentile：56.18(Physics, Applied)

We here report a step unbunching phenomenon, which is the inverse of the phenomenon of step bunching. When a 4H-SiC (0001) surface is annealed at a high temperature, step bunching arises due to the different velocities of the step motion in adjacent steps, resulting in steps with a height of more than several nanometers. We found that the bunched steps, thus, obtained by hydrogen etching in an Ar/H$$_{2}$$ atmosphere were "unbunched" into lower height steps when annealed subsequently at lower temperatures. This unbunching phenomenon can be well explained by the consequence of the competition between energetics and kinetics. Our findings provide another approach for the surface smoothing of SiC by hydrogen etching and may give significant insight into the application of SiC power devices and two-dimensional materials growth techniques in general.

Journal Articles

Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B$$_{4}$$C thin film

Norimatsu, Wataru*; Matsuda, Keita*; Terasawa, Tomoo; Takata, Nao*; Masumori, Atsushi*; Ito, Keita*; Oda, Koji*; Ito, Takahiro*; Endo, Akira*; Funahashi, Ryoji*; et al.

Nanotechnology, 31(14), p.145711_1 - 145711_7, 2020/04

https://doi.org/10.1088/1361-6528/ab62cf
 Times Cited Count：11 Percentile：44.57(Nanoscience & Nanotechnology)

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B$$_{4}$$C on SiC and graphene on B$$_{4}$$C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B$$_{4}$$C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B$$_{4}$$C was highly boron doped, and the hole concentration could be controlled over a wide range of 2$$times$$10$$^{13}$$ to 2$$times$$10$$^{15}$$ cm$$^{-2}$$. Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.

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