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Journal Articles

XPS real-time monitoring on the development of Si suboxides during formation of thermal oxides on Si(110) surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Kato, Atsushi*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

Shingaku Giho, 108(80), p.65 - 70, 2008/06

The growth process of thermal oxides on Si(110) surface and the development of their interfacial bonding structures have been investigated by using real-time synchrotron radiation photoemission spectroscopy. As a result, it was clarified that the Si$$^{3+}$$ component in the Si 2p core-level spectra is always much higher than that of Si$$^{4+}$$ for 0-1 mono-layer (ML) oxides on Si(110) surface. Observations on the time-evolution of the O 1s core-level spectrum indicates that the autocatalytic-reaction model proposed for the Si(001) oxidation can be also applicable to the Si(110) oxidation.

Oral presentation

XPS study on the UV/O$$_{3}$$ oxidation of H-terminated Si(110) surface

Nakano, Takuya*; Togashi, Hideaki*; Matsumoto, Mitsutaka*; Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*

no journal, , 

Time evolution of oxide layers in the H-terminated Si(110) surface by the UV/O$$_{3}$$ treatment at room temperature was observed by photoemission spectroscopy with synchrotron radiation. Special oxidation mechanisms for the H-terminated Si(110) surface were found. Si(110) surfaces were hydrogenated by HF treatments. The surface was irradiated and oxidized by UV light (253.7, 184.9 nm) of a low pressure Hg lamp in the air. The UV/O$$_{3}$$ irradiation time dependence of oxide thickness showed a step-wise profile. The step width was about 0.2 nm. The value is close to one oxide layer thickness (0.19 nm) for the Si(110) surface. Si atoms at the Si(110) surface are categolized to A bonds which are chain-like dense bonds, and B bonds which connect up and down A bond chains. The step-wise oxidation behaviour is reasonable if oxidation at the B bonds, in which oxidation strain is smaller than that of A bonds, has larger reaction rate than at the A bonds.

Oral presentation

Bonding structures of 1 mono-layer oxide on Si(110) evaluated by SR-PES

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

Ultra-thin oxide layer formation processes at Si(110) surface has been studied by using real-time photoemission spectroscopy with synchrotron radiation. Distribution of Si suboxides in the one mono layer oxide has been analyzed quantitatively and Si-O bonding configurations have been considered. Analyses for Si2p photoemission spectra, which were observed in the one mono layer oxide formed at 873 K and O$$_{2}$$ pressure of 1.0$$times$$10$$^{-5}$$ Pa on the Si(110) surface, resulted in avandance of an Si$$^{+3}$$ suboxide component whereas an Si$$^{+4}$$ component was dominant in the oxidation of Si(001) surface. The Si(110) surface consists of dense A bonds, which combine Si atoms in the same layer, and dilute B bonds, which combine Si atoms in the neibouring layers. Remaning of a part of the A bonds, which is easy to be distorted, as non-oxidized parts causes the dominant Si$$^{+3}$$ component formation.

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