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Journal Articles

Ion induced modifications of Mn-doped ZnO films

Matsunami, Noriaki*; Ito, M.*; Kato, M.*; Okayasu, Satoru; Sataka, Masao*; Kakiuchida, Hiroshi*

Nuclear Instruments and Methods in Physics Research B, 365(Part A), p.191 - 195, 2015/12

 Times Cited Count:4 Percentile:55.82(Instruments & Instrumentation)

We have studied ion impact effects on atomic structure in terms of X-ray diffraction (XRD), optical absorption and electrical resistivity of Mn (6%)-doped ZnO films under 100 MeV Xe ion impact at room temperature. We find the monotonic reduction of the XRD intensity to 1/50 of that of unirradiated film at 5 $$times$$10$$^{14}$$ cm$$^{-2}$$, little bandgap change ($$<$$0.02 eV) and decrease of the resistivity by 4 order of magnitude. The resistivity modification has been compared with that by irradiations of low energy ions such as 100 keV Ne and N, which show more effective decrease of resistivity. We also find that temperature (T) dependence of the magnetic susceptibility ($$chi$$) of Mn-doped ZnO follows the Curie law: $$chi$$ = $$chi$$$$_{o}$$ + C/T (i.e., paramagnetic) and the Curie constant C decreases to a half of that before irradiation (C$$_{O}$$ = 0.012 emu cm$$^{-3}$$ K) at 100 MeV Xe ion fluence of 10$$^{12}$$ cm$$^{-2}$$.

Journal Articles

Electrical property modifications of In-doped ZnO Films by ion irradiation

Matsunami, Noriaki*; Fukushima, Junichi*; Sataka, Masao; Okayasu, Satoru; Sugai, Hiroyuki; Kakiuchida, Hiroshi*

Nuclear Instruments and Methods in Physics Research B, 268(19), p.3071 - 3075, 2010/10

 Times Cited Count:12 Percentile:31.38(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Ion irradiation effects on tungsten-oxide films and charge state effect on electronic erosion

Matsunami, Noriaki*; Sataka, Masao*; Okayasu, Satoru; Kakiuchida, Hiroshi*

Nuclear Instruments and Methods in Physics Research B, 268(19), p.3167 - 3170, 2010/10

 Times Cited Count:9 Percentile:41.34(Instruments & Instrumentation)

We have studied electronic- and atomic-structure modifications of polycrystalline WO$$_{3}$$ films (bandgap of $$sim$$ 3 eV) by ion irradiation. WO$$_{3}$$ films were prepared by oxidation of W films on MgO substrates and of W sheets. We find disordering or amorphization, the lattice expansion of $$sim$$ 1.5% and bandgap increase of 0.2 eV after 90 MeV Ni ion irradiation at $$sim$$ 3 $$times$$ 10$$^{12}$$ cm$$^{2}$$. A broad peak of optical absorption appears around 1.6 $$mu$$m by ion irradiation. We also find that the erosion yield by high-energy ions with the equilibrium charge exceeds 10$$^{4}$$ and that the erosion yield under ion impact with non-equilibrium charge (90 MeV Ni$$^{+10}$$) is $$sim$$ 1/5 of that with the equilibrium charge (89 MeV Ni$$^{+19}$$). Effects of depth dependence of the ion mean charge on the erosion yields are discussed. The erosion yield by low-energy ions is also presented.

Journal Articles

High-energy ion irradiation effects on atomic structures and optical properties of copper oxide and electronic sputtering

Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Ishikawa, Norito; Tazawa, Masato*; Kakiuchida, Hiroshi*

Nuclear Instruments and Methods in Physics Research B, 266(12-13), p.2986 - 2989, 2008/06

 Times Cited Count:6 Percentile:54.25(Instruments & Instrumentation)

Irradiation effects of Cu$$_{2}$$O irradiated with 100 MeV Xe ions were studied. X-ray diffraction intensity and optical properties were analyzed.

Journal Articles

Current status of chemical sputtering of graphite and related materials

Matsunami, Noriaki*; Nakano, Tomohide

Proceedings of International Symposium on EcoTopia Science 2007 (ISETS '07) (CD-ROM), p.321 - 322, 2007/11

Journal Articles

Electronic sputtering of nitrides by high-energy ions

Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 256(1), p.333 - 336, 2007/03

 Times Cited Count:13 Percentile:29.84(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09

 Times Cited Count:15 Percentile:25.5(Instruments & Instrumentation)

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

 Times Cited Count:24 Percentile:14.01(Instruments & Instrumentation)

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Modification of optical properties of silicon nitride films on Si(100) by ion beams

Shinde, N.*; Matsunami, Noriaki*; Tazawa, Masato*; Sataka, Masao; Chimi, Yasuhiro

Transactions of the Materials Research Society of Japan, 31(3), p.709 - 712, 2006/09

no abstracts in English

Journal Articles

A Multi-exciton model for the electronic sputtering of oxides

Matsunami, Noriaki*; Fukuoka, Osamu*; Shimura, Tetsuo*; Sataka, Masao; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 230(1-4), p.507 - 511, 2005/04

 Times Cited Count:10 Percentile:38.93(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Ion beam modification of ZnO thin films on MgO

Matsunami, Noriaki*; Ito, Masaharu*; Takai, Yoshiaki*; Tazawa, Masato*; Sataka, Masao

Nuclear Instruments and Methods in Physics Research B, 206, p.282 - 286, 2003/05

 Times Cited Count:21 Percentile:19.19(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Sputtering of nano-crystalline gold by high energy heavy ions

Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro; Inami, Takashi*; Kobiyama, Mamoru*

Journal of Nuclear Materials, 302(2-3), p.206 - 210, 2002/04

 Times Cited Count:8 Percentile:49.58(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Electronic sputtering of oxides by high energy heavy ion impact

Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro

Nuclear Instruments and Methods in Physics Research B, 193(1-4), p.830 - 834, 2002/01

 Times Cited Count:22 Percentile:19.14(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Sputtering of high ${it Tc}$ superconductor YBa$$_{2}$$Cu$$_{3}$$O$$_{7-delta}$$ by high energy heavy ions

Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro

Nuclear Instruments and Methods in Physics Research B, 175-177, p.56 - 61, 2001/04

 Times Cited Count:6 Percentile:53.75(Instruments & Instrumentation)

no abstracts in English

Oral presentation

Grain-orientation alighnment in polycrystallin-SiO$$_{2}$$ films by high-energy ion irradiation

Shinde, N.*; Matsunami, Noriaki*; Shimura, Tetsuo*; Sataka, Masao; Okayasu, Satoru; Tazawa, Masato*

no journal, , 

no abstracts in English

Oral presentation

Ion irradiation effects on Cu$$_{3}$$N films and phase separation

Matsunami, Noriaki*; Kakiuchida, Hiroshi*; Tazawa, Masato*; Sataka, Masao; Okayasu, Satoru; Sugai, Hiroyuki

no journal, , 

no abstracts in English

Oral presentation

Heavy ion Rutherford backscattering spectrometry (HIRBS) at JAEA Tokai tandem accelerator

Nakamura, Masahiko; Matsuda, Makoto; Sataka, Masao; Takahiro, Katsumi*; Matsunami, Noriaki*

no journal, , 

no abstracts in English

Oral presentation

Ion irradiation effects on tungsten-oxide films and charge state effect on electronic erosion

Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Kakiuchida, Hiroshi*

no journal, , 

no abstracts in English

Oral presentation

Heavy ion Rutherford back scattering spectrometry at JAEA Tokai Tandem accelerator

Nakamura, Masahiko; Matsuda, Makoto; Asozu, Takuhiro; Sataka, Masao; Takahiro, Katsumi*; Matsunami, Noriaki*

no journal, , 

We approached the HIRBS at JAEA Tokai Tandem accelerator facility. The sensitivity of the HIRBS depends on one's energy resolution, the optimization of kinematics geometry, the mass of an ion beam and a target, and so on. The beam species was $$^{22}$$Ne which expected to offer better mass resolution for target mass around 70 amu. In kinematics, higher energy ion beam provides higher energy resolution, but nuclear reactions will occur in too high energy region. $$^{22}$$Ne beam was accelerated by Tandem accelerator up to 1.25 MeV/u. Targets ware a thin Au foil (1 nm) and Cu foil (10 nm) deposited on crystal Si substrate, GaAs single crystal and Ge single crystal. Ion detector was a typical Silicon detector with a 3.2 mm$$phi$$ aperture. The scattering angle was decided from typical RBS set-up as reference. We confirmed that the high energy HIRBS has enough mass resolution to analyze heavy elements in materials with a typical solid state detector, but not high resolution detection system.

Oral presentation

Ion irradiation effect of In-doped ZnO

Matsunami, Noriaki*; Fukushima, Jun*; Sataka, Masao; Okayasu, Satoru; Sugai, Hiroyuki; Kakiuchida, Hiroshi*

no journal, , 

no abstracts in English

22 (Records 1-20 displayed on this page)