Dynamical behavior of human -synuclein studied by quasielastic neutron scattering

Fujiwara, Satoru; Araki, Katsuya*; Matsuo, Tatsuhito; Yagi, Hisashi*; Yamada, Takeshi*; Shibata, Kaoru; Mochizuki, Hideki*

PLOS ONE (Internet), 11(4), p.e0151447_1 - e0151447_17, 2016/04

https://doi.org/10.1371/journal.pone.0151447

Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

Oshima, Takeshi; Deki, Manato; Makino, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Hirao, Toshio*; Kojima, Kazutoshi*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*

AIP Conference Proceedings 1525, p.654 - 658, 2013/04

https://doi.org/10.1063/1.4802408

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H-SiC epitaxial layers, and the leakage current through the gate oxide during heavy ion irradiation was investigated in order to evaluate dielectric breakdown induced by heavy ions (Single Event Gate Rupture: SEGR). The gate oxide at thickness ranges between 60 and 80 nm was formed using pyrogenic oxidation at 1100 C for 60 min. Circular electrodes with 180 diameter were formed using Al evaporation and a lift-off technique. The leakage current observed through the gate oxide was monitored during 18 MeV oxygen (O) or nickel (Ni) ions. As a result, although no significant difference in the value of the electric field at the dielectric breakdown (around 8.2 MV/cm) was observed between non-irradiated and 18 MeV-O irradiated samples, the value decreased to be 7.3 MV/cm in the case of 18 MeV-Ni ion incidence. The Linier Energy Transfer (LET) for 18 MeV-O is 7 MeV cm/mg, and this value is smaller than that for 18 MeV-Ni (24 MeV cm/mg). Also, 18 MeV-Ni ions deposit energy in narrower regions than 18 MeV-O ions. Thus, it can be concluded that the high density of charge induced by 18 MeV-Ni ions triggers SEGR in SiC MOS capacitors.

Development of a resonant laser ionization gas cell for high-energy, short-lived nuclei

Sonoda, Tetsu*; Wada, Michiharu*; Tomita, Hideki*; Sakamoto, Chika*; Takatsuka, Takaaki*; Furukawa, Takeshi*; Iimura, Hideki; Ito, Yuta*; Kubo, Toshiyuki*; Matsuo, Yukari*; et al.

Nuclear Instruments and Methods in Physics Research B, 295, p.1 - 10, 2013/01

https://doi.org/10.1016/j.nimb.2012.10.009

no abstracts in English

Electrical conduction properties of SiC modified by femtosecond laser

Ito, Takuto*; Deki, Manato; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Proceedings of 12th International Symposium on Laser Precision Microfabrication (LPM 2011) (Internet), 5 Pages, 2011/06

Laser modification aiming at the enhancement of local electrical conductivities in SiC

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.218 - 221, 2010/10

Effects of oxygen annealing on dielectric properties of LuFeCuO

Matsuo, Yoji*; Suzuki, Muneyasu*; Noguchi, Yuji*; Yoshimura, Takeshi*; Fujimura, Norifumi*; Yoshii, Kenji; Ikeda, Naoshi*; Mori, Shigeo*

Japanese Journal of Applied Physics, 47(11), p.8464 - 8467, 2008/11

https://doi.org/10.1143/JJAP.47.8464

We have investigated the physical properties of LuFeCuO, which is a derivative material of the electronic ferroelectric LuFeO. From electron diffraction measurements at room temperature, ionic ordering of Fe and Cu in the a-b plane was observed. This ordering is similar to that in LuFeO and has an electric dipole. The observation of small domains (5-10 nm) indicates the presence of polar regions. Dielectric measurements showed that a peak of dielectric constant appeared at around 500 K, and the peak value was about 1000, indicating that LuFeCuO is a dielectric material. We will present the experimental data on the samples prepared under high-pressure oxygen.

Irradiation polarization dependence of local electrical conductivity of SiC modified by femtosecond laser

Ito, Takuto*; Deki, Manato; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Crystal structure and physical properties of RFeTiO(R=Lu,Yb)

Hoshiyama, Takuya*; Mori, Shigeo*; Matsuo, Yoji*; Funae, Takeshi*; Kambe, Takashi*; Ikeda, Naoshi*; Kimizuka, Noboru*; Yoshii, Kenji; Michiue, Yuichi*

no journal, , 

We have investigated the crystal structure and physical properties of RFeTiO(R=Lu,Yb). The samples were prepared by the solid-state reaction method in air. X-ray and electron diffraction measurements showed that the materials have the same crystal structure as that of multiferroic RMnO. Magnetic measurements showed the absence of magnetic transition below 400 K. Dielectric measurements showed the peak of dielectric constant above room temperature, suggesting a existence of ferroelectric phase transition at high temperatures.

Fluence dependence of local electrical conductivities in SiC irradiated with femtosecond laser

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Femtosecond laser modification aiming at the enhancement of local electric conductivities on SiC

Deki, Manato; Yamamoto, Minoru*; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English