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Journal Articles

Excess carrier lifetime in p-type 4H-SiC epilayers with and without low-energy electron irradiation

Kato, Masashi*; Matsushita, Yoshinori*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Japanese Journal of Applied Physics, 51(2), p.028006_1 - 028006_2, 2012/02

https://doi.org/10.1143/JJAP.51.028006
 Times Cited Count：16 Percentile：55.56(Physics, Applied)

Excess carrier lifetimes in as-grown and low-energy electron irradiated p-type 4H-SiC epitaxial layers were investigated using the microwave photoconductivity decay method. The carrier lifetime increased with increasing excitation density in the epilayers. This results suggests that the dominant recombination center in the epilayers has larger capture cross section for electrons than capture cross section for holes. The carrier lifetime in the epilayer decreased by the low-energy electron irradiation decreases. The decrease in lifetime in the electron irradiated samples showed recovery after annealing at 1000 $$^{circ}$$C.

Journal Articles

Characteristic heavy fermion properties in YbCu$$_2$$Si$$_2$$ and YbT$$_2$$Zn$$_{20}$$ (T: Co, Rh, Ir)

Onuki, Yoshichika; Yasui, Shinichi*; Matsushita, Masaki*; Yoshiuchi, Shingo*; Oya, Masahiro*; Hirose, Yusuke*; Dung, N. D.*; Honda, Fuminori*; Takeuchi, Tetsuya*; Settai, Rikio*; et al.

Journal of the Physical Society of Japan, 80(Suppl.A), p.SA003_1 - SA003_6, 2011/12

https://doi.org/10.1143/JPSJS.80SA.SA003

Journal Articles

Relation between metamagnetic transition and quantum critical point in heavy fermion compound YbIr$$_2$$Zn$$_{20}$$

Onuki, Yoshichika; Yasui, Shinichi*; Yoshiuchi, Shingo*; Oya, Masahiro*; Matsushita, Masaki*; Hirose, Yusuke*; Takeuchi, Tetsuya*; Honda, Fuminori*; Settai, Rikio*; Sugiyama, Kiyohiro*; et al.

Journal of Physics; Conference Series, 273, p.012013_1 - 012013_4, 2011/02

https://doi.org/10.1088/1742-6596/273/1/012013
 Times Cited Count：1 Percentile：33.9(Physics, Condensed Matter)

Journal Articles

Metamagnetic behavior in heavy-fermion compound YbIr$$_2$$Zn$$_{20}$$

Takeuchi, Tetsuya*; Yasui, Shinichi*; Toda, Masatoshi*; Matsushita, Masaki*; Yoshiuchi, Shingo*; Oya, Masahiro*; Katayama, Keisuke*; Hirose, Yusuke*; Yoshitani, Naohisa*; Honda, Fuminori*; et al.

Journal of the Physical Society of Japan, 79(6), p.064609_1 - 064609_15, 2010/06

https://doi.org/10.1143/JPSJ.79.064609
 Times Cited Count：42 Percentile：83.7(Physics, Multidisciplinary)

Journal Articles

Low-temperature magnetic orderings and Fermi surface properties of LaCd$$_{11}$$, CeCd$$_{11}$$, and PrCd$$_{11}$$ with a caged crystal structure

Yoshiuchi, Shingo*; Takeuchi, Tetsuya*; Oya, Masahiro*; Katayama, Keisuke*; Matsushita, Masaki*; Yoshitani, Naohisa*; Nishimura, Naoto*; Ota, Hisashi*; Tateiwa, Naoyuki; Yamamoto, Etsuji; et al.

Journal of the Physical Society of Japan, 79(4), p.044601_1 - 044601_11, 2010/04

https://doi.org/10.1143/JPSJ.79.044601
 Times Cited Count：12 Percentile：59.61(Physics, Multidisciplinary)

Journal Articles

Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

Matsushita, Yoshinori*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Materials Science Forum, 645-648, p.207 - 210, 2010/00

Silicon carbide (SiC) is a promising material for radiation hardness devices. In this study, we evaluated excess carrier decay curves in both as-grown and electron-irradiated p-type 4H-SiC layers by the microwave photoconductivity decay ($$mu$$-PCD) method. The samples used in this study were an Al-doped p-type epitaxial layer grown on a Si-face B doped bulk p-type 4H-SiC. The samples were irradiated with electrons at an energy of 160 keV and at a doses of 1$$times$$10$$^{16}$$ cm$$^{-2}$$ (ele-16) and 1$$times$$10$$^{17}$$ cm$$^{-2}$$ (ele-17). As a results of $$mu$$-PCD measurements, the lifetimes of free carriers for as-grown, ele-16 and ele-17 were estimated to be 0.14 $$mu$$s, 0.07 $$mu$$s and 0.04 $$mu$$s, respectively. This result indicates that defects acting as recombination centers were introduced by the electron irradiation.

Journal Articles

Heavy fermion state in YbIr$$_2$$Zn$$_{20}$$

Yoshiuchi, Shingo*; Toda, Masatoshi*; Matsushita, Masaki*; Yasui, Shinichi*; Hirose, Yusuke*; Oya, Masahiro*; Katayama, Keisuke*; Honda, Fuminori*; Sugiyama, Kiyohiro*; Hagiwara, Masayuki*; et al.

Journal of the Physical Society of Japan, 78(12), p.123711_1 - 123711_4, 2009/12

https://doi.org/10.1143/JPSJ.78.123711
 Times Cited Count：39 Percentile：82.77(Physics, Multidisciplinary)

Oral presentation

Excess carrier lifetime in electron irradiated p-type 4H-SiC epilayers after annealing

Kato, Masashi*; Matsushita, Yoshinori*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no journal, , 

no abstracts in English

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