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Abe, Shinichiro; Hashimoto, Masanori*; Liao, W.*; Kato, Takashi*; Asai, Hiroaki*; Shimbo, Kenichi*; Matsuyama, Hideya*; Sato, Tatsuhiko; Kobayashi, Kazutoshi*; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 70(8, Part 1), p.1652 - 1657, 2023/08
Times Cited Count：2 Percentile：59.55(Engineering, Electrical & Electronic)Single event upsets (SEUs) caused by neutrons is a reliability problem for microelectronic devices in the terrestrial environment. Acceleration tests using white neutron beam provide realistic soft error rates (SERs), but only a few facilities can provide white neutron beam in the world. If single-source irradiation applicable to diverse neutron source can be utilized for the evaluation of the SER in the terrestrial environment, it contributes to solve the shortage of beam time. In this study, we investigated the feasibility of the SER estimation in the terrestrial environment by any one of these measured data with the SEU cross sections obtained by PHITS simulation. It was found that the SERs estimated by our proposed method are within a factor of 2.7 of that estimated by the Weibull function. We also investigated the effect of simplification which reduce the computational cost in simulation to the SER estimation.
Mori, Hiroko*; Uemura, Taiki*; Matsuyama, Hideya*; Abe, Shinichiro; Watanabe, Yukinobu*
no journal, ,
Terrestrial neutron-induced soft error has been recognized as a serious reliability problem for microelectronics. An irradiation testing with spallation neutron beam is suitable for evaluation of terrestrial neutron induced soft error rate (SER). The SER measured in neutron irradiation facility is necessary to compensate since neutron beam spectra obtained each facility is different from terrestrial neutron spectrum reported by JEDEC. We provide SER ratio between JEDEC's and facility's as a function of critical charge so as to compensate SER in various devices. The SER ratio was derived from single event upset (SEU) cross-section calculated by a multi-scale Monte Carlo simulation code system PHYSERD (PHits-HYenexss integrated code System for Effects of Radiation on Device). We performed SER testing using spallation neutron beam at three facilities. The deviation among measured SERs compensated by the SER ratio is less than 5%.
Abe, Shinichiro; Sato, Tatsuhiko; Kato, Takashi*; Matsuyama, Hideya*
no journal, ,
Radiation-induced charges in semiconductor device cause temporary and non-destructive faults (the so-called soft errors) in microelectronic devices. The model which estimates charges collected in the storage node of a memory element quickly and accurately is necessary to evaluate soft error rate by simulation. It is predicted that charge collection process in FinFET is differs from that in planar process due to differences in their structures. In this study, we perform systematic investigation of charge collection caused by radiation using 3-D TCAD simulator HyENEXSS in order to construct the charge collection model for FinFET. As a result of that investigation, it is found that temporal conduction between source node and drain node arises at few psec. It is also clarified that the temporal conduction has a major impact on charge collection process when charges deposited only near fin. Meanwhile, it is found that diffusion process is the main cause of charge collection when charges deposited in the substrate.
Abe, Shinichiro; Sato, Tatsuhiko; Kato, Takashi*; Matsuyama, Hideya*
no journal, ,
Radiation-induced charges in semiconductor device cause temporary and non-destructive faults (the so-called soft errors) in microelectronic devices. The model which estimates charges collected in the storage node of a memory element quickly and accurately is necessary to evaluate soft error rate by simulation. In our previous study, it was found that charge collection efficiency in FinFET change with the position and the amount of deposited charge. In this study, we construct the multiple sensitive volume model to estimate collected charge for FinFET. We obtained arbitrary charge deposition events by PHITS and analyzed charge collection of these events for by 3-D TCAD simulator HyENEXSS, the simple sensitive volume model and the multiple sensitive volume model. From the comparisons of the collected charges, it is found that the accuracy of collected charge calculation is improved by considering the variations of charge collection efficiency accompanying the position and the amount of deposited charge.
Abe, Shinichiro; Hashimoto, Masanori*; Liao, W.*; Kato, Takashi*; Asai, Hiroaki*; Shimbo, Kenichi*; Matsuyama, Hideya*; Sato, Tatsuhiko; Kobayashi, Kazutoshi*; Watanabe, Yukinobu*
no journal, ,
Single event upset (SEU) induced by secondary cosmic-ray neutrons is one of the causes of non-destructive faults (the so-called soft errors) in microelectronics. We have proposed a method to estimate the terrestrial soft error rates (SERs) based on simulation coupled with one-time neutron irradiation testing which can be applied to various kinds of neutron sources. The validity of our method has been investigated for 65-nm bulk SRAMs with the measured data using various neutron sources. This result will be reviewed on the organized session of the 67th Space Sciences and Technology Conference.
