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Journal Articles

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; Oshima, Takeshi; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; et al.

Applied Physics Letters, 108(2), p.021107_1 - 021107_4, 2016/01

 Times Cited Count:26 Percentile:81.53(Physics, Applied)

Journal Articles

Single-photon emitting diode in silicon carbide

Lohrmann, A.*; Iwamoto, Naoya*; Bodrog, Z.*; Castelletto, S.*; Oshima, Takeshi; Karle, T. J.*; Gali, A.*; Prawer, S.*; McCallum, J. C.*; Johnson, B. C.*

Nature Communications (Internet), 6, p.7783_1 - 7783_7, 2015/07

 Times Cited Count:110 Percentile:96.86(Multidisciplinary Sciences)

Journal Articles

Dopant effects on solid phase epitaxy in silicon and germanium

Johnson, B. C.; Oshima, Takeshi; McCallum, J. C.*

Journal of Applied Physics, 111(3), p.034906_1 - 034906_6, 2012/02

 Times Cited Count:7 Percentile:33.93(Physics, Applied)

Oral presentation

Dopant enhanced solid phase epitaxy in silicon and germanium

Johnson, B. C.; Oshima, Takeshi; McCallum, J. C.*

no journal, , 

Oral presentation

Solid phase epitaxy in Si and Ge

Johnson, B. C.; Oshima, Takeshi; McCallum, J. C.*

no journal, , 

Oral presentation

Dopant activation by solid phase epitaxy in silicon and germanium

Johnson, B. C.; Oshima, Takeshi; McCallum, J. C.*

no journal, , 

Solid phase epitaxy (SPE) is an important process used for the formation of shallow junctions on a low thermal budget. On annealing, atoms reorder at the crystal-amorphous (c-a) interface via a bond breaking mechanism, possibly mediated by dangling bonds. When the c-a interface passes a dopant, it is incorporated onto an electrically active lattice site, shifts the Fermi level and enhances the SPE velocity. The generalized Fermi level shifting (GFLS) model describes this process with two fitting parameters: the energy level, E, and degeneracy, g, of the SPE defect. High dopant concentrations induce a uniaxial strain in the plane of the c-a interface and is also expected to effect the SPE rate. In this study, we successfully incorporate this into the GFLS model. SPE data for a broad range of dopant concentrations and species in both silicon and germanium are investigated. Although the dopant concentrations are similar, the SPE of Ge in Sb rates are noticeably lower. Uniaxial compressive stress arising from the large Sb atoms causes this discrepancy.

Oral presentation

Search of defect centers acting as single photon source in silicon carbide

Oshima, Takeshi; Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya*; Johnson, B. C.*; Lohrmann, A.*; Karle, T.*; McCallum, J. C.*; Castelletto, S.*; Umeda, Takahide*; et al.

no journal, , 

no abstracts in English

Oral presentation

Single photon source in silicon carbide annealed at high temperature

Oshima, Takeshi; Lohrmann, A.*; Johnson, B. C.*; Castelletto, S.*; Onoda, Shinobu; Makino, Takahiro; Takeyama, Akinori; Klein, J. R.*; Bosi, M.*; Negri, M.*; et al.

no journal, , 

no abstracts in English

Oral presentation

Visible range photoluminescence from single photon sources in 3C, 4H and 6H silicon carbide

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; Oshima, Takeshi; et al.

no journal, , 

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