Radiation resistance of super-straight type amorphous silicon germanium alloy solar cells

Sato, Shinichiro; Meguro, Tomomi*; Suezaki, Takashi*; Yamamoto, Kenji*; Oshima, Takeshi

Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.1825 - 1829, 2014/06

https://doi.org/10.1109/PVSC.2014.6925278

Performance degradation of super-straight type amorphous silicon germanium alloy (a-SiGe) solar cells due to proton irradiation are investigated using an in-situ current-voltage measurement system. The results show that a-Si solar cells have higher radiation resistance than a-SiGe solar cells. Also, the room temperature annealing effects immediately after irradiation are investigated and it is shown that the recovery of the short-circuit current is especially prominent in all the parameters. Based on the obtained results, we propose a radiation hardened design of amorphous silicon alloy multi-junction solar cells.