Refine your search:     
Report No.
 - 
Search Results: Records 1-9 displayed on this page of 9
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Evaluation of element circuits constructing new radiation hardened SOI FPGAs

Shindo, Hiroyuki*; Midorikawa, Masahiko*; Sato, Yohei*; Kuboyama, Satoshi*; Hirao, Toshio; Oshima, Takeshi

JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 5, 2008/11

no abstracts in English

Journal Articles

Optimization for SEU/SET immunity on 0.15 $$mu$$m fully depleted CMOS/SOI digital logic devices

Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10

no abstracts in English

Journal Articles

Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry

Iida, Takeshi*; Tomioka, Yuichi*; Yoshimoto, Kimihiro*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Orihara, Misao*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ito, Hisayoshi; et al.

Japanese Journal of Applied Physics, Part 1, 41(2A), p.800 - 804, 2002/02

 Times Cited Count:15 Percentile:52.4(Physics, Applied)

no abstracts in English

Journal Articles

Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry

Tomioka, Yuichi*; Iida, Takeshi*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Yoshimoto, Kimihiro*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ishida, Yuki*; Kosugi, Ryoji*; et al.

Materials Science Forum, 389-393, p.1029 - 1032, 2002/00

 Times Cited Count:4 Percentile:20.38(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

The Investigation of 4H-SiC/SiO$$_{2}$$ interfaces by optical and electrical measurements

Ishida, Yuki*; Takahashi, Tetsuo*; Okumura, Hajime*; Jikimoto, Tamotsu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito; Tomioka, Yuichi*; Midorikawa, Masahiko*; Hijikata, Yasuto*; Yoshida, Sadafumi*

Materials Science Forum, 389-393, p.1013 - 1016, 2002/00

 Times Cited Count:4 Percentile:20.38(Materials Science, Multidisciplinary)

no abstracts in English

Oral presentation

Technologies of radiation hardness for deep submicron semiconductor devices; Development of rad-hard high-speed logic circuit using SOI technology

Shindo, Hiroyuki*; Sato, Yohei*; Midorikawa, Masahiko*; Kuboyama, Satoshi*; Makihara, Akiko*; Hirao, Toshio; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

Optimization for SEU/SET immunity on 0.15$$mu$$m fully depleted CMOS/SOI digital logic devices

Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.

no journal, , 

no abstracts in English

Oral presentation

The Present status and prospect of the development of space LSIs using SOI substrates

Kuboyama, Satoshi*; Shindo, Hiroyuki*; Midorikawa, Masahiko*; Sato, Yohei*; Oshima, Takeshi; Hirao, Toshio; Yokose, Tamotsu*; Makihara, Akiko*

no journal, , 

no abstracts in English

Oral presentation

Evaluation of new SOI FPGA element circuits with radiation hardness

Shindo, Hiroyuki*; Midorikawa, Masahiko*; Sato, Yohei*; Kuboyama, Satoshi*; Hirao, Toshio

no journal, , 

no abstracts in English

9 (Records 1-9 displayed on this page)
  • 1