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Journal Articles

Crystallization of an amorphous layer in P$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Frank, T.*; Pensl, G.*; Suzuki, Ryoichi*; Odaira, Toshiyuki*; et al.

Journal of Applied Physics, 87(9), p.4119 - 4125, 2000/05

 Times Cited Count:12 Percentile:50.33(Physics, Applied)

no abstracts in English

Journal Articles

Study of residual defects in ion-implanted and subsequently annealed 3C-SiC

Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00

no abstracts in English

Journal Articles

Investigation of positron moderator materials for electron-linac-based slow positron beamlines

Suzuki, Ryoichi*; *; Uedono, Akira*; Y.K.Cho*; Yoshida, Sadafumi*; Ishida, Yuki*; Oshima, Takeshi; Ito, Hisayoshi; *; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 37(8), p.4636 - 4643, 1998/08

 Times Cited Count:24 Percentile:71.47(Physics, Applied)

no abstracts in English

Journal Articles

Investigation of vacancy-type defects in P$$^{+}$$-implanted 6H-SiC using monoenergetic positron beams

Uedono, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*

Japanese Journal of Applied Physics, Part 1, 37(5A), p.2422 - 2429, 1998/05

 Times Cited Count:13 Percentile:54.49(Physics, Applied)

no abstracts in English

Journal Articles

Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.

Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00

no abstracts in English

Journal Articles

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11

 Times Cited Count:16 Percentile:64.19(Physics, Applied)

no abstracts in English

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