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Journal Articles

Mechanisms of unexpected reduction in hole concentration in Al-doped 4$$H$$-SiC by 200 keV electron irradiation

Matsuura, Hideharu*; Minohara, Nobumasa*; Oshima, Takeshi

Journal of Applied Physics, 104(4), p.043702_1 - 043702_6, 2008/08

 Times Cited Count:13 Percentile:47.14(Physics, Applied)

The hole concentration in Al-doped $$p$$-type 4$$H$$-SiC irradiated with electrons at 200 keV was investigated. By the irradiation at 200 keV electrons, only substitutional Carbon atoms (C) in SiC can be displaced. The reduction in hole concentration due to the electron irradiation was found to be mainly due to a decrease in Al acceptor concentration and not due to an increase in defect concentration. Based on the analysis of temperature dependence of hole concentration, two types of acceptor levels were detected and the density and energy level of each acceptor were determined.

Journal Articles

Mechanisms of reduction in hole concentration in Al-implanted p-type 6H-SiC by 1 MeV electron irradiation

Matsuura, Hideharu*; Izawa, Keisuke*; Minohara, Nobumasa*; Oshima, Takeshi

Japanese Journal of Applied Physics, 47(7), p.5355 - 5357, 2008/07

 Times Cited Count:2 Percentile:9.86(Physics, Applied)

The reduction in hole concentration ($$p$$) in Al-implanted $$p$$-type 6H-SiC due to 1 MeV electron irradiation was studied. By analysis of $$p$$, the acceptor density ($$N_{A}$$), its ionizing energy ($$E_{A}$$) and nature of the acceptor are determined. As a result, the acceptor observed in this study is assigned to an Al acceptor. $$E_{A}$$ is independent of irradiation fluence ($$Phi$$), in spite that $$N_{A}$$ is strongly dependent on $$Phi$$. We derived an analytical expression for the fluence dependence of $$N_{A}$$ and we estimated the removal coefficient (i.e., removal cross-section) of $$N_{A}$$ to be 6.4$$times$$10$$^{18}$$ cm$$^{2}$$ for 1 MeV electron irradiation. The reduction in p due to electron irradiation is found to be mainly due to the decrease in $$N_{A}$$, not to the increase in the density of defects with deep-level, because the decrease in $$N_{A}$$ is much larger than the increment in the density of deep-level defects.

Journal Articles

Mechanisms of decrease in hole concentration in Al-doped 4H-SiC by irradiation of 200 keV electrons

Matsuura, Hideharu*; Minohara, Nobumasa*; Inagawa, Yusuke*; Takahashi, Miyuki*; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 556-557, p.379 - 382, 2007/00

no abstracts in English

Journal Articles

Decrease in hole concentration in Al-doped 4H-SiC by irradiation of 200 keV electrons

Matsuura, Hideharu*; Minohara, Nobumasa*; Takahashi, Miyuki*; Oshima, Takeshi; Ito, Hisayoshi

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.181 - 184, 2006/10

no abstracts in English

Oral presentation

Elucidation of mechanism of the decrease in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Minohara, Nobumasa*; Inagawa, Yusuke*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

Verification of reduction in acceptor density due to displacement of C in Al-doped 4H-SiC by electron irradiation

Nishino, Kozo*; Minohara, Nobumasa*; Matsuura, Hideharu*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Mechanism of reduction of hole concentration in Al-doped 4H-SiC by 200keV electron irradiations

Matsuura, Hideharu*; Minohara, Nobumasa*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

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