High-resolution photoemission study of the hybridization gap in the Kondo semiconductor CeRhAs

Shimada, Kenya*; Higashiguchi, Mitsuharu*; Arita, Masashi*; Namatame, Hirofumi*; Taniguchi, Masaki*; Fujimori, Shinichi; Saito, Yuji; Fujimori, Atsushi; Takata, Yasutaka*; Shin, S.*; et al.

Journal of Magnetism and Magnetic Materials, 310(2, Part1), p.e57 - e58, 2007/03

We have examined the electronic states of the Kondo semiconductor CeRhAs and the semimetal CeRhSb by means of high-resolution photoemission spectroscopy using tunable photon energies from 40 up to 5948 eV. On the basis of the photon-energy dependence ofthe photoionization cross-section, we have elucidated the p-d-f hybridized states in these compounds.