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Tagawa, Masahito*; Sogo, Chie*; Miyagai, Suguru*; Yokota, Kumiko*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Ultra-thin oxide-layers on Si(001) surfaces, formed by an atomic oxygen beam with hyperthermal incident energy, were analysed by photoemission spectroscopy with synchrotron radiation. The formation of ultra-thin oxide-layers was performed in Kobe University. The photoemission spectroscopy was performed at the surface chemistry experimental station installed in the JAEA soft X-ray beamline in the SPring-8. Comparing the photoemission spectra with those of thermal oxidation with oxygen gas, it was found that a few suboxides were observed in the ultra-thin oxide-layers formed by atomic oxygem beams.
beam exposuresTagawa, Masahito*; Yokota, Kumiko*; Nishizaki, Noriaki*; Miyagai, Suguru*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Fast nitrogen molecular beams with 2 keV kinetic energy were irradiated at an Si(001) surface with an ultra-thin oxide overlayer. Photoemission peaks of bulk Si atoms became to be not clear. This fact indicates that nitrogen molecules transmitted from the oxide film react with bulk Si atoms. On the other hand, slow nitrogen molecular beams with 1.6 eV to 6.9 eV incident energy were irradiated at the oxide film. The surfaces were observed by photoemission spectroscopy with synchrotron radiation. With increasing the incident energy, SiN-related part in the Si2p photoemission peak increased in the bulk-sensitive measurements rather than surface-sensitive measurements. This fact reveals that nitrogen molecules are impinged into the oxide film even in such low energy and chemical bonds with Si atoms are formed near the interface.