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Journal Articles

Pulsed EPR studies of the T$$_{V2a}$$ center in 4$$H$$-SiC

Isoya, Junichi*; Umeda, Takahide*; Mizuochi, Norikazu*; Oshima, Takeshi

Materials Science Forum, 615-617, p.353 - 356, 2009/00

To indentify intrinsic defects in silicon carbide (SiC), a T$$_{V2a}$$ center in 4$$H$$-SiC was investigated using pulsed electron paramagnetic resonance (EPR). The T$$_{V2a}$$ is a center with S=3/2 and C$$_{3V}$$ symmetry, and in previous studies, the origin of the T$$_{V2a}$$ is thought to be a defects of negatively charged Si vacancy (V$$_{Si}$$$$^{-}$$). In this study, T$$_{V2a}$$ centers were introduced in n-type 4$$H$$-SiC samples by MeV range electron irradiation at 10$$^{18}$$ /cm$$^{2}$$. As a result of EPR, pulsed EPR and ENDOR measurements, the origin of the T$$_{V2a}$$center can be identified to be not a simple V$$_{Si}$$$$^{-}$$ defect but the complex between V$$_{Si}$$$$^{-}$$ with Next Nearest Neighbors.

Journal Articles

EPR identification of intrinsic defects in SiC

Isoya, Junichi*; Umeda, Takahide*; Mizuochi, Norikazu*; Son, N. T.*; Janz$'e$n, E.*; Oshima, Takeshi

Physica Status Solidi (B), 245(7), p.1298 - 1314, 2008/07

https://doi.org/10.1002/pssb.200844209
 Times Cited Count：65 Percentile：88.26(Physics, Condensed Matter)

Intrinsic defects in silicon carbide (SiC) were indentified using Electron Paramagnetic Resonance (EPR). The samples used in this study were cubic (3C) and hexagonal (4H, 6H) SiC. The angular dependence of hyperfine structure of $$^{29}$$Si, $$^{13}$$C was compared to the results from the first principle calculations As the results, positively charged carbon vacancies in $$h$$ and $$k$$ sites (V$$_{C}$$$$^{+}$$($$h$$), V$$_{C}$$$$^{+}$$($$k$$)), negatively charged carbon vacancy (V$$_{C}$$$$^{-}$$($$h$$)), and neutoral, positively and negatively charged di-vacancies of silicon vacancy and carbon vacancy ([V$$_{Si}$$V$$_{C}$$]$$^{0}$$, [V$$_{Si}$$V$$_{C}$$]$$^{+}$$, [V$$_{Si}$$V$$_{C}$$]$$^{-}$$) were identified.

Journal Articles

EPR study of electron-irradiated SiC; Structure determination of intrinsic defects in 4$$H$$-SiC

Isoya, Junichi*; Umeda, Takahide*; Mizuochi, Norikazu*; Katagiri, Masayuki*; Oshima, Takeshi; Morishita, Norio; Ito, Hisayoshi

JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 15, 2007/02

https://jopss.jaea.go.jp/pdfdata/JAEA-Review-2006-042.pdf

no abstracts in English

Journal Articles

Spin multiplicity and charge state of a silicon vacancy (${it T}$ $$_{V2a}$$) in 4${it H}$-SiC determined by pulsed ENDOR

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Umeda, Takahide*; Isoya, Junichi*

Physical Review B, 72(23), p.235208_1 - 235208_6, 2005/12

https://doi.org/10.1103/PhysRevB.72.235208
 Times Cited Count：50 Percentile：83.64(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

EPR studies of the isolated negatively charged silicon vacancies in ${it n}$-type 4${it H}$- and 6${it H}$-SiC; Identification of ${it C}$$$_{3v}$$ symmetry and silicon sites

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

Physical Review B, 68(16), p.165206_1 - 165206_11, 2003/10

https://doi.org/10.1103/PhysRevB.68.165206
 Times Cited Count：41 Percentile：82.86(Materials Science, Multidisciplinary)

Isolated silicon vacancies with negative charge (V$$_{Si}$$$$^{-}$$) in 4H- and 6H-SiC were studied using EPR. The samples used in this study were irradiated with electron at 3 MeV at RT. After irradiation, the samples were annealed at 300 $$^{circ}$$C in Ar to eliminate C-related isolated vacancies. As the result of $$^{13}$$C hyperfine spectra, two kinds of V$$_{Si}$$$$^{-}$$(I) and V$$_{Si}$$$$^{-}$$(II) were distinguished and they are assigned to be arising from hexagonal and cubic sites of Si. In addition, both V$$_{Si}$$$$^{-}$$(I) and V$$_{Si}$$$$^{-}$$(II) signals have C$$_{3v}$$ symmetry, which means nearest-neighbor carbon atoms silightly distorted from a regular tetrahedron.

Journal Articles

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C$$_{3nu}$$ symmetry in $$n$$-type 4H-SiC

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

Physical Review B, 66(23), p.235202_1 - 235202_12, 2002/12

https://doi.org/10.1103/PhysRevB.66.235202
 Times Cited Count：108 Percentile：95.03(Materials Science, Multidisciplinary)

EPR study was performed to understand vacancy-type defects in electron-irradiated 4H-SiC. In this study, the T$$_{V2a}$$ center which was reported to be S=1 was charactrized. As a result of untation method of EPR technique, it was revealed that the multipicity of the center is not triplet (S=1) but quartet (S=3/2). From the analysis of $$^{13}$$C hyperfine interactions of nearest-neighbors, the canter was determined to be single silicon vacancy. In addition, it was found that the center is negativly charged silicon vacancy with C$$_{3nu}$$ symmetry.

Journal Articles

EPR study of single silicon vacancy-related defects in 4H- and 6H-SiC

Mizuochi, Norikazu*; Isoya, Junichi*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 389-393, p.497 - 500, 2002/00

https://doi.org/10.4028/www.scientific.net/MSF.389-393.497
 Times Cited Count：3 Percentile：16.1(Materials Science, Multidisciplinary)

The spin triplet (S=1) single silicon vacancy relared defects in electron irradiated (3MeV 4$$times$$10$$^{18}$$ e/cm$$^{2}$$, room temperature) n-type 4H- and p-type 6H-SiC were studied by electron paramagnetic resonance (EPR) spectroscopy. By laser irradiation, the hyperfine couplings (HFC) with nearest-neighbor (NN) atoms of T$$_{V2a}$$ were observed. As a result of detailed analysis, T$$_{V2a}$$ was unambiguously assigned to be the single silicon vacancy.

Oral presentation

ESR study of defects in SiC

Isoya, Junichi*; Umeda, Takahide*; Mizuochi, Norikazu*; Oshima, Takeshi; Morishita, Norio; Hishiki, Shigeomi*; Onoda, Shinobu

no journal, , 

no abstracts in English

Oral presentation

The EPR identification of carbon antisite defect

Umeda, Takahide*; Mizuochi, Norikazu*; Isoya, Junichi*; Morishita, Norio; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Creation control of NV centers in diamonds using high energy nitrogen ion or 2 MeV electron irradiation

Isoya, Junichi*; Umeda, Takahide*; Mizuochi, Norikazu*; Oshima, Takeshi; Onoda, Shinobu; Sato, Shinichiro; Morishita, Norio

no journal, , 

no abstracts in English

10 (Records 1-10 displayed on this page)
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