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Journal Articles

Investigation of single-event damages on silicon carbide (SiC) power MOSFETs

Mizuta, Eiichi*; Kuboyama, Satoshi*; Abe, Hiroshi; Iwata, Yoshiyuki*; Tamura, Takashi*

IEEE Transactions on Nuclear Science, 61(4), p.1924 - 1928, 2014/08

 Times Cited Count:94 Percentile:99.19(Engineering, Electrical & Electronic)

Journal Articles

Consideration of single-event gate rupture mechanism in power MOSFET

Kuboyama, Satoshi*; Mizuta, Eiichi*; Ikeda, Naomi*; Abe, Hiroshi; Oshima, Takeshi; Tamura, Takashi*

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.138 - 141, 2012/12

no abstracts in English

Journal Articles

In-pile creep rupture properties of ODS ferritic steel claddings

Kaito, Takeji; Otsuka, Satoshi; Inoue, Masaki; Asayama, Tai; Uwaba, Tomoyuki; Mizuta, Shunji; Ukai, Shigeharu*; Furukawa, Tomohiro; Ito, Chikara; Kagota, Eiichi; et al.

Journal of Nuclear Materials, 386-388, p.294 - 298, 2009/04

 Times Cited Count:32 Percentile:88.55(Materials Science, Multidisciplinary)

In order to examine irradiation effect on creep rupture strength of Oxide Dispersion Strengthened (ODS) steel claddings, the in-pile creep rupture test was conducted using Material Testing Rig with Temperature Control (MARICO)-2 in the experimental fast reactor JOYO. Fourteen creep rupture events were successfully detected by the temperature change in each capsule and the $$gamma$$-ray spectrometry of the cover gas. Time to creep ruptures of six ODS steel specimens were identified by means of Laser Resonance Ionization Mass Spectrometry (RIMS), and no irradiation effect on creep rupture strength was confirmed within the irradiation condition in the MARICO-2 test.

Oral presentation

Investigation of the SEGR generating mechanism in power MOSFET

Mizuta, Eiichi*; Ikeda, Naomi*; Kuboyama, Satoshi*; Tamura, Takashi*; Abe, Hiroshi; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

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