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Fujiwara, Satoru; Araki, Katsuya*; Matsuo, Tatsuhito; Yagi, Hisashi*; Yamada, Takeshi*; Shibata, Kaoru; Mochizuki, Hideki*
PLOS ONE (Internet), 11(4), p.e0151447_1 - e0151447_17, 2016/04
Times Cited Count:24 Percentile:64.99(Multidisciplinary Sciences)Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11
The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.
Okamoto, Yasuharu*; Mochizuki, Yuji*; Tsushima, Satoru*
Chemical Physics Letters, 373(1-2), p.213 - 217, 2003/05
Times Cited Count:8 Percentile:24.96(Chemistry, Physical)no abstracts in English
Mochizuki, Yuji*; Tsushima, Satoru*
Chemical Physics Letters, 372(1-2), p.114 - 120, 2003/04
Times Cited Count:13 Percentile:39.19(Chemistry, Physical)no abstracts in English
Sakata, Osami*; Furukawa, Yukito*; Goto, Shunji*; Mochizuki, Tetsuro*; Uruga, Tomoya*; Takeshita, Kunikazu*; Ohashi, Haruhiko*; Ohata, Toru*; Matsushita, Tomohiro*; Takahashi, Sunao*; et al.
Surface Review and Letters, 10(2&3), p.543 - 547, 2003/04
Times Cited Count:141 Percentile:96.38(Chemistry, Physical)The main components of a new beamline for surface and interface crystal structure determination at SPring-8 are briefly described. Stages for the beamline monochromator are modified for making an incident X-ray intensity more stable for surface X-ray experiments. Absolute photon flux densities were measured with an incident photon energy. A new ultrahigh vacuum system is introduced with preliminary X-ray measurements from an ordered oxygen on Pt(111) surface.
Kamide, Hideki; Hayashi, Kenji; Gunji, Minoru; Hayashida, Hitoshi; Nishimura, Motohiko; Iitsuka, Toru; Kimura, Nobuyuki; Tanaka, Masaaki; Nakai, Satoru; Mochizuki, Hiroyasu; et al.
PNC TN9410 96-279, 51 Pages, 1996/08
Large-scaled thermohydraulic tests are planned for some new key technologies in the heat transport systems of demonstration fast reactors, in which the reactor vessel, the primary system, the secondary system, water-steam system, and the decay heat removal systems are modeled. Thermohydraulic issues and structural integrity issues were discussed for the top entry piping systems with satellite pools of the intermediate heat exchangers and the pumps, the natural circulation decay heat removal using direct heat exchangers in a reactor hot pool, the reactor vessel wall cooling system, and the new type of steam generators in the demonstration reactor. Concepts of the experimental model for the reactor vessel and the primary system were created and compared with each other for the sodium test facility which enables to answer the thermohydraulic and structural integrity issues. Following items were considered in the creation and in the selection of the models; (1)solution of the issues for Demonstration First Reactor on total system characteristics, the reactor vessel wall cooling system, the decay heat removal system, and the steam generator, (2)balance between the thermohydraulic issues and the structural integrity issues, (3)simulations of compound phenomena and interactions between the components and the heat transport systems. Total system of test facility was specified based on the selected test model.
Nakamura, Tetsuya*; Sumita, Taishi*; Imaizumi, Mitsuru*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*; Mochizuki, Toru*; Takeda, Akihiro*; Okano, Yoshinobu*; Sato, Shinichiro; et al.
no journal, ,
Radiation effects on GaAs solar cells with InGaAs dot layers were investigated in order to consider the capability of them for space applications. The GaAs solar cells with 50 InGaAs dot layers and also GaAs solar cells with no dot layer were fabricated using a MBE method. They were irradiated with 150 keV-protons at room temperature. As a result, solar cell with dot layers showed higher radiation degradation in short circuit current however, lower degradation in open circuit voltage. Since no significant difference in the degradation of current - voltage characteristics under dark conditions between dot and non-dot solar cells, it is concluded that the degradation of fill fuctor does not come from the degradation of pn diode characteristics but might come from the degradation of minority carrier diffusion length.
Fujiwara, Satoru; Araki, Katsuya*; Matsuo, Tatsuhito; Yagi, Hisashi*; Yamada, Takeshi*; Shibata, Kaoru; Mochizuki, Hideki*
no journal, ,
Fujiwara, Satoru; Araki, Katsuya*; Matsuo, Tatsuhito; Yagi, Hisashi*; Yamada, Takeshi*; Shibata, Kaoru; Mochizuki, Hideki*
no journal, ,
Oshima, Takeshi; Nakamura, Tetsuya*; Sugaya, Takeyoshi*; Sumita, Taishi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Matsubara, Koji*; Niki, Shigeru*; Mochizuki, Toru*; Takeda, Akihiro*; et al.
no journal, ,
Fujiwara, Satoru; Araki, Katsuya*; Matsuo, Tatsuhito; Yagi, Hisashi*; Yamada, Takeshi*; Shibata, Kaoru; Mochizuki, Hideki*
no journal, ,
Oshima, Takeshi; Nakamura, Tetsuya*; Sumita, Taishi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*; Mochizuki, Toru*; Okano, Yoshinobu*
no journal, ,