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Journal Articles

Replacement of the criticality accident alarm system in the Tokai Reprocessing Plant

Sanada, Yukihisa; Ishii, Masato*; Hasegawa, Ichiro; Kanazawa, Nobuyuki; Chikazawa, Tatsuya*; Momose, Takumaro

NEA/CSNI/R(2010)4 (Internet), p.351 - 370, 2010/11

A criticality accident alarm system (CAAS) was installed in the 1980s as part of criticality safety management at the Tokai Reprocessing Plant (TRP) to reduce the chance of workers being exposed to radiation in the rare case of a criticality accident. From a compliance point of view processing at TRP cannot take place without the criticality monitoring provided by the CAAS. This paper gives an overview of the process of the CAAS being replaced as part of aging management.

Oral presentation

Analysis of initial oxidation process of high-index Si surfaces using supersonic molecular beam

Ono, Shinya*; Inoue, Kei*; Momose, Tatsuya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Development and installation of new criticality accident alarm systems, 3; System replacement at the Tokai Reprocessing Plant

Kanazawa, Nobuyuki; Sanada, Yukihisa; Yoshitsugu, Yuichi; Hikinuma, Yuichi; Chikazawa, Tatsuya*; Hasegawa, Ichiro; Momose, Takumaro

no journal, , 

no abstracts in English

Oral presentation

Analysis of plane direction dependence for Si initial oxidation reactions induced by supersonic molecular beams

Ono, Shinya*; Inoue, Kei*; Momose, Tatsuya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Analysis of initial oxidation process of high-index Si surfaces using supersonic molecular beam, 2

Ono, Shinya*; Kanemura, Rui*; Abe, Sosuke*; Inoue, Kei*; Momose, Tatsuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Investigation of the difference between thermal oxidation and supersonic molecular beam induced oxidation on Si(113)

Ono, Shinya*; Abe, Sosuke*; Kanemura, Rui*; Miura, Shu*; Narishige, Takuma*; Inoue, Kei*; Momose, Tatsuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; et al.

no journal, , 

no abstracts in English

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