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Arai, Taiki*; Yoshigoe, Akitaka; Motohashi, Mitsuya*
Zairyo No Kagaku To Kogaku, 60(5), p.153 - 158, 2023/10
Si oxide films are currently widely used as insulating materials in electronic devices and biomaterials. The atomic bonding state of these films significantly influences the properties of each device, thus it is particularly necessary to understand and control the chemical bonding state between Si and O in the films. In this study, the Si oxide films formed by anodic oxidation on Si substrate surfaces in extremely low concentrations of HF solutions were analyzed by X-ray photoelectron spectroscopy mainly focusing on Si2p and F1s spectra. Although the HF concentration is in the order of ppm, the films contain percent order of F atoms, suggesting the formation of Si-F and Si-O-F bonds in the films. It was also found that the different depth profiles for F and O atoms was observed, indicating that the surface reaction processes seem to be different depending on each element.
Qiao, Y.*; Arai, Taiki*; Suzuki, Toshiaki*; Yoshigoe, Akitaka; Niwa, Masaaki*; Motohashi, Mitsuya*
no journal, ,
Roll-like structures with a thickness of about 1 
m fabricated by anodization of the surface of single-crystalline Si wafers have the potential to be applied to a variety of devices. With the aim of controlling the thickness and length of the rolls, the influence of the surface condition of the Si substrate before anodization was investigated. It was found that Pt coating before anodization was effective in controlling the thickness of rolls. Furthermore, it was found that this result was not affected by the doping types.
Arai, Taiki*; Qiao, Y.*; Suzuki, Toshiaki*; Yoshigoe, Akitaka; Niwa, Masaaki*; Motohashi, Mitsuya*
no journal, ,
In this study, it was found that the relationship between anodisation time and surface morphology after anodic oxidation of silicon oxide layers on p-type Si substrates. The unique meso-materials (Si rolls) are formed by using extremely diluted HF solution for anodization. The resistance between the electrodes during anodization initially increased with increasing anodization time and then becomes constant value. After some time, it gradually increased again. It seems to consider an important parameter to control the formation of Si rolls and those numbers.
Arai, Taiki*; Qiao, Y.*; Suzuki, Toshiaki*; Yoshigoe, Akitaka; Motohashi, Mitsuya*
no journal, ,
Si oxide films are currently widely used as insulating materials in electronic devices and biomaterials. The chemical bonding of these films significantly influences the properties of each device, thus it is particularly necessary to understand and control the chemical bonds between Si and O in the films in detail. In this study, the Si oxide films formed by anodic oxidation on Si surfaces in extremely low concentrations of HF solutions were analyzed by X-ray photoelectron spectroscopy on Si2p and F1s spectra. Although the HF concentration is in the order of ppm, the films contain percent order of F atoms, suggesting the formation of Si-F and Si-O-F bonds in the films. It was also found that the different depth profiles for F and O atoms was observed, indicating that the surface reaction processes seem to be different depending on each element.