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Bh in the 
Cm(
Na,5
)Bh reaction and its decay propertiesHaba, Hiromitsu*; Fan, F.*; Kaji, Daiya*; Kasamatsu, Yoshitaka*; Kikunaga, Hidetoshi*; Komori, Yukiko*; Kondo, Narumi*; Kudo, Hisaaki*; Morimoto, Koji*; Morita, Kosuke*; et al.
Physical Review C, 102(2), p.024625_1 - 024625_12, 2020/08
Times Cited Count：6 Percentile：59.56(Physics, Nuclear)
acidic solutionsYokoyama, Akihiko*; Kitayama, Yuta*; Fukuda, Yoshiki*; Kikunaga, Hidetoshi*; Murakami, Masashi*; Komori, Yukiko*; Yano, Shinya*; Haba, Hiromitsu*; Tsukada, Kazuaki; Toyoshima, Atsushi*
Radiochimica Acta, 107(1), p.27 - 32, 2019/01
Times Cited Count：1 Percentile：11.15(Chemistry, Inorganic & Nuclear)Kaji, Daiya*; Morimoto, Koji*; Wakabayashi, Yasuo*; Takeyama, Mirei*; Yamaki, Sayaka*; Tanaka, Kengo*; Haba, Hiromitsu*; Huang, M.*; Murakami, Masashi*; Kanaya, Jumpei*; et al.
JPS Conference Proceedings (Internet), 6, p.030107_1 - 030107_4, 2015/06
Performance of the new gas-filled recoil ion separator GARIS-II was investigated using asymmetric 
Ne-induced fusion reactions. The use of He-H
mixture gas for the gas-filled magnet significantly reduced background scattered particles detected at the focal-plane Si detector, and increased a transmission of the asymmetric reaction products. A target-identification system was newly installed for efficient measurements of excitation functions without changing beam energy nor target.
Nb and 
Ta for chemical studies of element 105, Db, using the GARIS gas-jet systemHuang, M.*; Haba, Hiromitsu*; Murakami, Masashi*; Asai, Masato; Kaji, Daiya*; Kanaya, Jumpei*; Kasamatsu, Yoshitaka*; Kikunaga, Hidetoshi*; Kikutani, Yuki*; Komori, Yukiko*; et al.
Journal of Radioanalytical and Nuclear Chemistry, 304(2), p.845 - 849, 2015/05
Times Cited Count：3 Percentile：25.85(Chemistry, Analytical)A technique to utilize radioisotopes of Nb and Ta was developed for chemical studies of element 105, Db, by coupling a gas-jet transport system to the RIKEN gas-filled recoil ion separator (GARIS). The short-lived Nb and Ta were produced with nuclear reactions using a 
F beam whose energy was the same as that to produce 
Db. Then, they were separated with GARIS and extracted to a chemistry laboratory with the gas-jet transport system. By changing only magnetic field of GARIS and inserting an energy degrader and a shutter for recoil ions, we could deliver the Nb and Ta to a chemistry device for Db without changing other experimental conditions.
Db in the Cm(F,5)Db reaction and decay properties of Db and 
LrHaba, Hiromitsu*; Huang, M.*; Kaji, Daiya*; Kanaya, Jumpei*; Kudo, Yuki*; Morimoto, Koji*; Morita, Kosuke*; Murakami, Masashi*; Ozeki, Kazutaka*; Sakai, Ryutaro*; et al.
Physical Review C, 89(2), p.024618_1 - 024618_11, 2014/02
Times Cited Count：25 Percentile：82.3(Physics, Nuclear)Cm + 
O reactionMurakami, Masashi*; Goto, Shinichi*; Murayama, Hirofumi*; Kojima, Takayuki*; Kudo, Hisaaki*; Kaji, Daiya*; Morimoto, Koji*; Haba, Hiromitsu*; Kudo, Yuki*; Sumita, Takayuki*; et al.
Physical Review C, 88(2), p.024618_1 - 024618_8, 2013/08
Times Cited Count：15 Percentile：66.57(Physics, Nuclear)Production cross sections of Rf isotopes in the Cm + O reaction were measured at the beam energy range of 88.2 to 101.3 MeV by use of a gas-filled recoil ion separator. The excitation functions of 
Rf, 
Rf, and Rf were obtained together with those of spontaneously fissioning nuclides which have few-second half-lives and have been assigned to 
Rf and a longer-lived state of Rf. The excitation function of few-second spontaneously fissioning nuclide exhibited the maximum cross section at the O beam energy of 94.8 MeV. The shape of the excitation function was almost the same as that of Rf, whereas it was quite different from those of Rf and Rf. A few-second spontaneously fissioning nuclide previously reported as Rf and Rf observed inCm + O reaction was identified as Rf.
113 of the 113th elementMorita, Kosuke*; Morimoto, Koji*; Kaji, Daiya*; Haba, Hiromitsu*; Ozeki, Kazutaka*; Kudo, Yuki*; Sumita, Takayuki*; Wakabayashi, Yasuo*; Yoneda, Akira*; Tanaka, Kengo*; et al.
Journal of the Physical Society of Japan, 81(10), p.103201_1 - 103201_4, 2012/10
Times Cited Count：167 Percentile：97.27(Physics, Multidisciplinary)An isotope of the 113th element, 113, was produced in a nuclear reaction with a 
Zn beam on a 
Bi target. We observed six consecutive 
decays following the implantation of a heavy particle in nearly the same position in the semiconductor detector, in extremely low background condition. The fifth and sixth decays are fully consistent with the sequential decays of Db and Lr both in decay energies and decay times. This indicates that the present decay chain consisted of 113, 
Rg (Z = 111), 
Mt (Z = 109), Bh (Z = 107), Db (Z = 105), and Lr (Z = 103) with firm connections. This result, together with previously reported results from 2004 and 2007, conclusively leads the unambiguous production and identification of the isotope 113, of the 113th element.
Li, T.*; Garg, U.*; Liu, Y.*; Marks, R.*; Nayak, B. K.*; Madhusudhana Rao, P. V.*; Fujiwara, Mamoru*; Hashimoto, Hisanobu*; Nakanishi, Kosuke*; Okumura, Shun*; et al.
Physical Review C, 81(3), p.034309_1 - 034309_11, 2010/03
Times Cited Count：107 Percentile：97.48(Physics, Nuclear)Nakazato, Tomoharu*; Furukawa, Yusuke*; Tanaka, Momoko; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi*; Nagashima, Keisuke; Kimura, Toyoaki*; Murakami, Hidetoshi*; Saito, Shigeki*; et al.
Journal of Crystal Growth, 311(3), p.875 - 877, 2009/01
Times Cited Count：24 Percentile：86.17(Crystallography)The temperature dependence of scintillation properties of a hydrothermal-method-grown zinc oxide (ZnO) emission is investigated using a nickel-like silver laser emitting at 13.9 nm. A broad peak at 386 nm with a full-width at half-maximum (FWHM) of 15 nm at room temperature (298 K) is obtained. The peak position tends to be blue shifted while the FWHM becomes narrower when the crystal temperature is decreased to 25 K. Streak images fitted by a double exponential decay reveal that the measured emission decay at 105 K was 
= 0.88 ns and = 2.7 ns. This decay time of a few nanoseconds is suitable for lithographic applications and is sufficiently short for the characterization of laser plasma extreme ultraviolet (EUV) sources with nanosecond durations.
Tanaka, Momoko; Furukawa, Yusuke*; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Murakami, Hidetoshi*; Shimizu, Toshihiko*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Kawachi, Tetsuya; Kagamitani, Yuji*; et al.
X-Ray Lasers 2008; Springer Proceedings in Physics, Vol.130, p.501 - 505, 2009/00
We measured the time-resolved fluorescence spectra of ZnO and GaN single crystals excited by an X-ray laser operating at 13.9 nm and evaluated their scintillation properties for EUV excitation as compared with UV excitation case. For ZnO, a clear fluorescence peak of excitonic origin was observed at around 380 nm and the decay lifetime of less than 3 ns is found to be almost similar to the UV excitation case. The fluorescence at 380 nm is ideal for scintillator device design in the EUV and further applications. For GaN, the lifetimes are much longer than ZnO and the temporal profile of the EUV-excited fluorescence differs with the UV excitation case. As such, the EUV scintillation properties of ZnO is said to be more favorable than GaN. Finally, it is also demonstrated that an X-ray laser is an excellent tool for spectroscopic characterization of materials intended for next-generation lithography applications.
Furukawa, Yusuke*; Tanaka, Momoko; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nishimura, Hiroaki*; Mima, Kunioki*; Kagamitani, Yuji*; et al.
Reza Kenkyu, 36(APLS), p.1028 - 1030, 2008/12
Optical technologies in extreme ultraviolet (EUV) region have been receiving strong interests for the next generation lithography. Here we report properties of ZnO as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The ZnO sample was irradiated with EUV laser pulses and the fluorescence was measured using a streak camera fitted with a spectrograph. A clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. The prominent peak fluorescence is ideal for EUV detection and further applications including imaging.
Furukawa, Yusuke*; Tanaka, Momoko; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kimura, Toyoaki; Murakami, Hidetoshi*; Saito, Shigeki*; et al.
Journal of the Optical Society of America B, 25(7), p.B118 - B121, 2008/07
Times Cited Count：24 Percentile：72.65(Optics)Using EUV laser operated at 13.9 nm ZnO and GaN are shown to be excellent scintillators in this wavelength region. Especially ZnO has short response time of 3 ns and prominent peak fluorescence from excitation at 380 nm.
Tanaka, Momoko; Furukawa, Hiroyuki*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kagamitani, Yuji*; Ehrentraut, D.*; et al.
Journal of Physics; Conference Series, 112(4), p.042058_1 - 042058_4, 2008/00
Times Cited Count：1 Percentile：55.21(Physics, Fluids & Plasmas)Optical technologies in the extreme ultraviolet (EUV) region have been receiving strong interest for the next generation lithography. Efficient and fast scintillators are one of the key devices functioning in the EUV region. In this paper, we report excellent properties of ZnO and GaN as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The sample was irradiated with EUV laser pulses, and the fluorescence spectrum and the fluorescence lifetime were measured using a streak camera fitted with a spectrograph. In the case of ZnO, a clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. For GaN, a fluorescence peak at 370 nm having slower 5-ns decay time was observed. In this respect, the EUV scintillation properties of ZnO is said to be more favorable than GaN.
Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kimura, Toyoaki; Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; et al.
Applied Physics Letters, 91(23), p.231117_1 - 231117_3, 2007/12
Times Cited Count：52 Percentile：84.56(Physics, Applied)The scintillation properties of a hydrothermal method grown zinc oxide (ZnO) crystal are evaluated for extreme ultraviolet (EUV) laser excitation at 13.9 nm wavelength. The exciton emission lifetime at around 380 nm is determined to be 1.1 ns, almost identical to ultraviolet laser excitation cases. This fast response time is sufficiently short for characterizing EUV lithography light sources having a few nanoseconds duration. The availability of large size ZnO crystal up to 3-inch is quite attractive for future lithography and imaging applications.
Saito, Kimiaki; Saito, Hidetoshi*; Kunieda, Etsuo*; Narita, Yuichiro*; Myojoyama, Atsushi*; Fujisaki, Tatsuya*; Kawase, Takatsugu*; Kaneko, Katsutaro*; Ozaki, Masahiro*; Deloar, H. M.*; et al.
Joho Shori, 48(10), p.1081 - 1088, 2007/10
no abstracts in English
Nishio, Satoshi; Ushigusa, Kenkichi; Ueda, Shuzo; Polevoi, A.*; Kurita, Genichi; Tobita, Kenji; Kurihara, Ryoichi; Hu, G.; Okada, Hidetoshi*; Murakami, Yoshiki*; et al.
JAERI-Research 2000-029, 105 Pages, 2000/10
JAERI-Research-2000-029.pdf:4.19MB
no abstracts in English
Furukawa, Yusuke*; Murakami, Hidetoshi*; Sarukura, Nobuhiko*; Tanaka, Momoko; Nishikino, Masaharu; Nagashima, Keisuke; Kimura, Toyoaki; Yamatani, Hiroshi; Yoshikawa, Akira*; Fukuda, Tsuguo*
no journal, ,
Using Ni-like Ag extreme ultraviolet (EUV) laser operated at 13.9-nm, ZnO is shown to be the excellent scintillator in this wavelength region with sufficiently short response time of less than 3 nsec and prominent peak fluorescence originated form exciton at 380 nm.
Tanaka, Momoko; Furukawa, Yusuke*; Murakami, Hidetoshi*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Nagashima, Keisuke; Kimura, Toyoaki; Yamatani, Hiroshi; Yoshikawa, Akira*; Fukuda, Tsuguo*
no journal, ,
Using Ni-like Ag extreme ultraviolet (EUV) laser operated at 13.9-nm, ZnO is shown to be the excellent scintillator in this wavelength region with sufficiently short response time of less than 3 nsec and prominent peak fluorescence originated form exciton at 380 nm.
Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; et al.
no journal, ,
Zinc oxide (ZnO) has previously been reported to be a potential light-emitting diode materia. We measured the time-resolved emission spectrum of a ZnO crystal for extreme ultraviolet (EUV) laser excitation at 13.9 nm wavelength and compared with UV excitation case. The emission lifetime was determined to be 2.6 ns. This value was not changed even for ultraviolet laser excitation. In the context of the nanosecond regime in the EUV region, ZnO crystal promises to be a feasible scintillation material.
Sarukura, Nobuhiko*; Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; et al.
no journal, ,
Optical technologies in the extreme ultraviolet (EUV) region have been receiving strong interest for the next generation lithography. Here we report properties of ZnO and GaN as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The sample was irradiated with EUV laser pulses and the fluorescence were measured using a streak camera fitted with a spectrograph. In the case of ZnO, a clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns, as shown in Fig. 1. The prominent peak fluorescence is ideal for EUV detection and further applications including imaging. For GaN, a fluorescence peak at 370 nm having slower 5-ns decay time was observed. In this respect, the EUV scintillation properties of ZnO is said to be more favorable than GaN.
