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Journal Articles

Valence control of charge and orbital frustrated system YbFe$$_{2}$$O$$_{4}$$ with electrochemical Li$$^{+}$$ intercalation

Murase, Satoshi*; Yoshikawa, Yumi*; Fujiwara, Kosuke*; Fukada, Yukimasa*; Teranishi, Takashi*; Kano, Jun*; Fujii, Tatsuo*; Inada, Yasuhiro*; Katayama, Misaki*; Yoshii, Kenji; et al.

Journal of Physics and Chemistry of Solids, 162, p.110468_1 - 110468_6, 2022/03

 Times Cited Count:0 Percentile:0(Chemistry, Multidisciplinary)

We report a trial of the valence control for mixed valence iron triangular oxide YbFe$$_{2}$$O$$_{4}$$ in order to develop an effective technique to control the frustration of charges in strongly correlated electron systems. The electro-chemical doping of Li$$^{+}$$ into YbFe$$_{2}$$O$$_{4}$$ was examined on the cell type sample similar to the Li-ion secondary battery cell. Systematic change of the lattice constant, Fe-Fe and Fe-Yb distance were observed with Li doping. Maximum value of the doping was over 300 mAh/g. An EXAFS experiment indicated that Li positioned between Yb octahedron layer (U-layer) and Fe-bipyramidal layer (W-layer). However, detailed change of iron valence state of YbFe$$_{2}$$O$$_{4}$$ was not clearly observed because of the superimpose of the signal from iron metal nano particles in XANES observation. The results indicate that the electrochemical method might be one of the potential technique to control the frustration of charges in YbFe$$_{2}$$O$$_{4}$$.

Journal Articles

Use of liquid helium-3 as a neutron converter for a semiconductor-based neutron detector

Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*

Nuclear Instruments and Methods in Physics Research A, 529(1-3), p.399 - 401, 2004/08

 Times Cited Count:1 Percentile:10.3(Instruments & Instrumentation)

We evaluated the neutron-detection characteristics of a cryogenic neutron detector operating at 1.6 K, which comprises a liquid helium-3 as a neutron converter and an InSb semiconductor detector. The InSb semiconductor detector detected the protons created in the nuclear reaction $$^{3}He + n rightarrow p + T$$ in the liquid helium-3, where the density of that is ~600 times larger than that of the gaseous helium-3 at room temperature.

Journal Articles

Cryogenic neutron detector by InSb semiconductor detector with high-density helium-3 gas converter

Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*

Nuclear Instruments and Methods in Physics Research A, 520(1-3), p.76 - 79, 2004/03

 Times Cited Count:8 Percentile:48.81(Instruments & Instrumentation)

The neutron-detection characteristics of a cryogenic neutron detector comprising an InSb semiconductor detector and a helium-3 gas converter were evaluated at a gas pressure of up to 12.5atm at 4.2K. The detector successfully detected stable neutrons under these conditions, where the density of the helium-3 gas is a few-hundred times higher than that at room temperature. It was found that the neutron detection efficiency was correlated with the gas pressure - even in a backward-detection configuration - in low-temperature, high-pressure helium-3.

Journal Articles

Schottky and pn junction cryogenic radiation detectors made of p-InSb compound semiconductor

Kanno, Ikuo*; Hishiki, Shigeomi*; Murakami, Haruko*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya; Katagiri, Masaki

Nuclear Instruments and Methods in Physics Research A, 520(1-3), p.93 - 95, 2004/03

 Times Cited Count:2 Percentile:18.14(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Cryogenic neutron detector comprising an InSb semiconductor detector and a supercritical helium-3 gas converter

Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*

Review of Scientific Instruments, 75(2), p.340 - 344, 2004/02

 Times Cited Count:6 Percentile:35.7(Instruments & Instrumentation)

We evaluated the neutron-detection characteristics of a proposed cryogenic neutron detector comprising an InSb semiconductor detector and a helium-3 gas converter. The neutron detector was operated at 4.2 K with helium-3 gas filling up to 1.5 atm, at which the density of the helium-3 nucleus corresponds to that at 160 atm at room temperature. The secondary particles generated by the $$^{3}$$He(n,p) T reaction were successfully detected by the InSb detector with a time response of $$sim$$80 nsec at all tested gas pressures.

Journal Articles

Radiation measurements by a cryogenic $$pn$$ junction InSb detector with operating temperatures up to 115 K

Kanno, Ikuo*; Yoshihara, Fumiki*; Nouchi, Ryo*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya; Katagiri, Masaki

Review of Scientific Instruments, 74(9), p.3968 - 3973, 2003/09

 Times Cited Count:18 Percentile:65.85(Instruments & Instrumentation)

$$Pn$$ junction-type radiation detectors were fabricated with an InSb substrate. The detectors had 1000 times higher resistances than the ones of the previously reported Schottky-type detectors. The output pulses of the preamplifier were analyzed from the point of view of the contribution of electrons and holes. The energy spectra of $$^{241}$$Am alpha particles were measured at operating temperatures of up to 115 K. The inherent voltage of the detector was estimated.

Journal Articles

Undoped-type InSb radiation detector with rapid rise time

Hishiki, Shigeomi*; Kanno, Ikuo*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya; Katagiri, Masaki

Radiation Detectors and Their Uses, p.113 - 117, 2003/00

We fabricated the schottkey-type InSb semiconductor radiation detector using an undoped InSb substrate, and evaluated the charactersitics of the alpha particle detection. The InSb detectors detected alphar particles successfully at all the tested temperature from 4.2 to 115 K. The 10-to-90% rise times of the preamplifier outputs were about 350 nsec regardless of the operating temperature. These fast rise times were about 20 times improved comparing to those from p-type InSb semiconductor detector.

Journal Articles

Evidence for the diffusion of Au atoms into the Te UPD layer formed on a Au(111) substrate

Kawamura, Hiroyuki; Takahashi, Masamitsu; Hojo, Nobuhiko*; Miyake, Masao*; Murase, Kuniaki*; Tamura, Kazuhisa*; Uosaki, Kohei*; Awakura, Yasuhiro*; Mizuki, Junichiro; Matsubara, Eiichiro*

Journal of the Electrochemical Society, 149(2), p.C83 - C88, 2002/02

 Times Cited Count:6 Percentile:21.78(Electrochemistry)

The structure of a Te layer formed on a Au(111) substrate by underpotential deposition (UPD) in an electrolytic solution has been studied using in-situ surface X-ray diffraction technique. The measurements were carried out for a series of samples which were kept at UPD potential for 4 to 59 hours. The results revealed that the Te UPD layer is unstable. The top layer is analyzed to consist of the UPD Te atoms and Au atoms which diffuse from the Au(111) substrate. Also, the Te UPD layer does not have the structure with periodicity reported in previous works, such as ($$sqrt{3}$$$$times$$$$sqrt{3}$$) R30$$^{circ}$$ after ample time elapses. Stripping voltammetry for the Te UPD layer shows that the interaction between Te and Au increases with time, supporting the finding that the top layer is a mixture of Te and Au.

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