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Journal Articles

Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

 Times Cited Count:10 Percentile:49.94(Physics, Applied)

Journal Articles

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Journal Articles

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Journal Articles

Identified charged hadron production in $$p + p$$ collisions at $$sqrt{s}$$ = 200 and 62.4 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; Akiba, Yasuyuki*; Al-Bataineh, H.*; Alexander, J.*; Aoki, Kazuya*; Aphecetche, L.*; Armendariz, R.*; et al.

Physical Review C, 83(6), p.064903_1 - 064903_29, 2011/06

 Times Cited Count:156 Percentile:99.42(Physics, Nuclear)

Transverse momentum distributions and yields for $$pi^{pm}, K^{pm}, p$$, and $$bar{p}$$ in $$p + p$$ collisions at $$sqrt{s}$$ = 200 and 62.4 GeV at midrapidity are measured by the PHENIX experiment at the RHIC. We present the inverse slope parameter, mean transverse momentum, and yield per unit rapidity at each energy, and compare them to other measurements at different $$sqrt{s}$$ collisions. We also present the scaling properties such as $$m_T$$ and $$x_T$$ scaling and discuss the mechanism of the particle production in $$p + p$$ collisions. The measured spectra are compared to next-to-leading order perturbative QCD calculations.

Journal Articles

Azimuthal correlations of electrons from heavy-flavor decay with hadrons in $$p+p$$ and Au+Au collisions at $$sqrt{s_{NN}}$$ = 200 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; Akiba, Yasuyuki*; Al-Bataineh, H.*; Alexander, J.*; Aoki, Kazuya*; Aphecetche, L.*; Aramaki, Y.*; et al.

Physical Review C, 83(4), p.044912_1 - 044912_16, 2011/04

 Times Cited Count:8 Percentile:52.71(Physics, Nuclear)

Measurements of electrons from the decay of open-heavy-flavor mesons have shown that the yields are suppressed in Au+Au collisions compared to expectations from binary-scaled $$p+p$$ collisions. Here we extend these studies to two particle correlations where one particle is an electron from the decay of a heavy flavor meson and the other is a charged hadron from either the decay of the heavy meson or from jet fragmentation. These measurements provide more detailed information about the interaction between heavy quarks and the quark-gluon matter. We find the away-side-jet shape and yield to be modified in Au+Au collisions compared to $$p+p$$ collisions.

Journal Articles

JENDL photonuclear data file

Kishida, Norio*; Murata, Toru*; Asami, Tetsuo*; Kosako, Kazuaki*; Maki, Koichi*; Harada, Hideo*; Lee, Y.*; Chang, J.*; Chiba, Satoshi; Fukahori, Tokio

AIP Conference Proceedings 769, p.199 - 202, 2005/05

Nuclear data for photonuclear reactions are required in the field of shielding design of high-energy electron accelerators and high-energy $$gamma$$-ray therapy. The JENDL Photonuclear Data File was prepared by a working group on nuclear data evaluations for photonuclear reactions in Japanese Nuclear Data Committee. From a survey of many literatures, it is difficult to construct the photonuclear data file by using only measured data, since there are not sufficient experimental data. We were therefore evaluating with theoretical calculations based on statistical nuclear reaction models. The photonuclear cross sections that are to be contained in the file are as follows: photoabsorption cross sections, yield cross sections and DDX for neutrons, protons, deuterons, tritons, $$^{3}$$He-particles and alpha-particles, and isotope production cross sections. For the actinide nuclides, photofission cross sections are also included. The maximum energy of incident photons is 140 MeV and stored are the photonuclear data for 68 nuclides from $$^{2}$$H to $$^{237}$$Np.

Journal Articles

Nuclear data evaluations for JENDL high-energy file

Watanabe, Yukinobu*; Fukahori, Tokio; Kosako, Kazuaki*; Shigyo, Nobuhiro*; Murata, Toru*; Yamano, Naoki*; Hino, Tetsushi*; Maki, Koichi*; Nakashima, Hiroshi; Odano, Naoteru*; et al.

AIP Conference Proceedings 769, p.326 - 331, 2005/05

An overview is presented of recent nuclear data evaluations performed for the JENDL high-energy (JENDL-HE) file, in which neutron and proton cross sections for energies up to 3 GeV are included for the whole 132 nuclides. The current version of the JENDL-HE file consists of neutron total cross sections, nucleon elastic scattering cross sections and angular distributions, nonelastic cross sections, production cross sections and double-differential cross sections of secondary light particles (${it n, p, d, t,}$ $$^{3}$$He, $$alpha$$, and $$pi$$) and $$gamma$$-rays, isotope production cross sections, and fission cross sections in the ENDF6 format. The present evaluations are performed on the basis of experimental data and theoretical model calculations. For the cross section calculations, we have constructed a hybrid calculation code system with some available nuclear model codes and systematics-based codes, such as ECIS96, OPTMAN, GNASH, JQMD, JAM, TOTELA, FISCAL, and so on. The evaluated cross sections are compared with available experimental data and the other evaluations. Future plans of our JENDL-HE project are discussed along with prospective needs of high-energy cross section data.

Journal Articles

Neutron and $$gamma$$ ray radiography using a multi-color converter

Iwata, Hideki*; Mochiki, Koichi*; Murata, Yutaka*; Nitto, Koichi*; Tamura, Toshiyuki*; Kobayashi, Hisao*; Matsubayashi, Masahito

Dai-3-Kai Hoshasen Ni Yoru Hihakai Hyoka Shimpojiumu Koen Rombunshu, p.142 - 147, 1999/11

no abstracts in English

Journal Articles

Application of neutron radiography to visualization of cryogenic fluid boiling two-phase flows

Takenaka, Nobuyuki*; Asano, Hitoshi*; Fujii, Terushige*; Ushiro, Toshihiko*; Iwatani, Junji*; Murata, Yutaka*; Mochiki, Koichi*; Taguchi, Akira*; Matsubayashi, Masahito; Tsuruno, Akira

Nuclear Instruments and Methods in Physics Research A, 377(1), p.174 - 176, 1996/07

 Times Cited Count:1 Percentile:23.76(Instruments & Instrumentation)

no abstracts in English

JAEA Reports

None

Murata, Masatoshi*; Kato, Yoshiro*; Kobayashi, Koichi*

PNC TJ7361 92-001, 165 Pages, 1992/02

PNC-TJ7361-92-001.pdf:8.22MB
PNC-TJ7361-92-001-attribute-list-A.pdf:25.4MB
PNC-TJ7361-92-001-attribute-list-A-G.pdf:86.0MB

no abstracts in English

Oral presentation

2007 version of JENDL high energy file and JENDL photonuclear data file

Fukahori, Tokio; Kunieda, Satoshi; Chiba, Satoshi; Harada, Hideo; Nakashima, Hiroshi; Mori, Takamasa; Shimakawa, Satoshi; Maekawa, Fujio; Watanabe, Yukinobu*; Shigyo, Nobuhiro*; et al.

no journal, , 

The latest version of JENDL High Energy File (JENDL/HE) and JENDL Photonuclear Data File (JENDL/PD) is being planed to be released as JENDL/HE-2007 and JENDL/PD-2007. In JENDL/HE-2007, nuclear data for about 100 nuclides, which are newly ecaluated and revised from JENDL/HE-2004 will be stored. The JENDL/PD-2007 will have nuclear data for about 170 nuclides.

Oral presentation

$$gamma$$-ray irradiation effect on SiC MOSFETs with gate-bias voltage

Murata, Koichi; Mitomo, Satoshi; Matsuda, Takuma; Yokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

no abstracts in English

Oral presentation

The Electrical characteristics of SiC-MOSFETs irradiated with $$gamma$$-rays at elevated temperature

Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

no abstracts in English

Oral presentation

Difference by the oxide fabrication process of the $$gamma$$-ray irradiation effect on SiC-MOSFET

Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; et al.

no journal, , 

no abstracts in English

Oral presentation

Electrical properties of SiC MOSFETs irradiated with $$gamma$$-rays at elevated temperature

Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Silicon carbide (SiC) is expected to be applied to Metal-Oxide-Semiconductor (MOS) FETs used in harsh radiation environments to decommission TEPCO Fukushima Daiichi nuclear reactors. To develop radiation resistant SiC MOS FETs, clarification of their radiation response under elevated temperature is required. We measured capacitance-voltage (C-V) characteristics of SiC MOSFETs irradiated with $$gamma$$-rays at 423 K in nitrogen atmosphere. The samples were vertical power 4H-SiC MOSFETs with the blocking voltage of 1200 V and the rated current of 20 A with the gate oxide thickness of 45 nm. Typical C-V curve of a SiC MOSFET irradiated even up to 5 kGy was shifted to negative voltage side, suggesting that the positive charges generated in gate oxide by irradiation. While, no significant change in the slope of the curve was observed, indicating that interface traps between the gate oxide and SiC were merely generated. The radiation response of SiC MOS FETs under elevated temperature predominantly depends on the amount of positive charges generated in the gate oxide.

Oral presentation

Influence of $$gamma$$-ray irradiation under high temperature and humidity circumstance on the electrical characteristics of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

no abstracts in English

Oral presentation

Effect of high temperature and humidity on dose dependence of charges generated in SiC MOSFETs due to $$gamma$$-ray irradiation

Takeyama, Akinori; Matsuda, Takuma*; Yokoseki, Takashi*; Mitomo, Satoshi*; Murata, Koichi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Effect of $$gamma$$-ray irradiation under high temperature and humidity circumstances on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. In the case of irradiation under high humidity circumstance, trapped oxide and interface charges densities generated due to irradiation were smaller than those for irradiation in dry circumstance. It is concluded that humidity circumstance suppressed the degradation of the electrical properties due to irradiation including threshold voltage shift and leakage current.

Oral presentation

Optimum structures for $$gamma$$-ray radiation resistant SiC-MOSFETs

Takeyama, Akinori; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; et al.

no journal, , 

Oxide thickness dependence of $$gamma$$-ray irradiation response on Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. As a result of irradiation, the threshold voltage V$$_{th}$$ for both SiC MOSFETs with gate oxide of 30 nm or 60 nm thick shifted to negative voltage-side gently. However, the V$$_{th}$$ for 60 nm thick more immediately decreased over 400 kGy. It is found that SiCMOSFETs with smaller thickness has a higher radiation tolerance.

Oral presentation

Influence of gate bias on $$gamma$$-ray radiation response of SiC MOSFETs

Takeyama, Akinori; Murata, Koichi*; Mitomo, Satoshi*; Matsuda, Takuma*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Deterioration of electrical property of SiCMOSFETs due to irradiation was reduced compared with no biased ones, when the SiC MOSFETs with switching bias were irradiated. In order to clarify this mechanism, SiCMOSFETs were irradiated up to 50 kGy with switching bias applied to gate oxide from 4.5 to 0 V. As a result, the large negative shift of threshold voltage V$$_{th}$$ due to irradiation with positive bias significantly recovered in the cases that the bias switched to zero. It shows electrical property of SiCMOSFETs were immediately relieved when applied bias was removed by switching.

19 (Records 1-19 displayed on this page)
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