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Journal Articles

In-plane orientation control of 2,7-diphenyl[1]benzothieno[3,2-$$b$$][1]benzothiophene monolayer on bismuth-terminated Si(111) vicinal surfaces with wettability optimization

Otomo, Manabu; Tsuchida, Yuya*; Muraya, Naoki*; Yanase, Takashi*; Sakai, Seiji; Yonezawa, Tetsu*; Nagahama, Taro*; Hasegawa, Tetsuya*; Shimada, Toshihiro*

Journal of Physical Chemistry C, 117(22), p.11555 - 11561, 2013/06

 Times Cited Count:2 Percentile:9.84(Chemistry, Physical)

We report in-plane orientation control of newly developed high-mobility organic semiconductor: 2,7-diphenyl[1]benzothieno[3,2-$$b$$][1]benzothiophene (DPh-BTBT). As previously reported on monolayer pentacene, it was revealed that bunched steps on vicinal Si(111) with bismuth termination break the surface symmetry and reduce three-fold symmetry of DPh-BTBT grains into quasi-single orientation. Interestingly, the critical step height necessary for the orientation control was different from that of pentacene. We examined several mechanisms of orientation control and concluded that the facet nano structure fabricated by step bunching is working as an anisotropic template. We will also show the wettability control of bismuth terminated silicon surface and show that the growth mode of DPh-BTBT is dependent on the surface nanostructure of Bi-Si.

Journal Articles

Effect of hydrogenation on the electronic state of metallic La hydrides probed by X-ray absorption sectroscopy at the La $$L$$-edges

Ishimatsu, Naoki*; Sasada, Ryohei*; Maruyama, Hiroshi*; Ichikawa, Takayuki*; Miyaoka, Hiroki*; Kimura, Toru*; Tsubota, Masami*; Kojima, Yoshitsugu*; Tsumuraya, Takao*; Oguchi, Tamio*; et al.

Journal of Physics; Conference Series, 190, p.012070_1 - 012070_4, 2009/11

 Times Cited Count:4 Percentile:77.5

We have investigated the effect of hydrogenation on La $$5d$$ and $$6p$$ electronic states in metallic LaH$$_x$$ by X-ray absorption near edge structure at the La $$L$$-edges. As the hydrogen content $$x$$ increases from 0 to 2.6, white-line intensity at the La $$L_{2,3}$$-edges shows a remarkable increase in the range of $$x$$ $$>$$ 2.0. This is interpreted as the increase in La $$5d$$ hole induced by interstitial H atoms on the octahedral sites. On the other hand, the shoulder structure at the La $$L_1$$-edge disappears in the process of $$x$$ = 0.0 $$rightarrow$$ 2.0, indicating that the $$p$$-$$ d$$ hybridization is weakened by H atoms on the tetrahedral sites. This study demonstrates that H atoms on the two interstitial H sites provide different contribution to the modification of the electronic states.

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