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Journal Articles

Enhanced charge collection by single ion strike in AlGaN/GaN HEMTs

Onoda, Shinobu; Hasuike, Atsushi*; Nabeshima, Yoshiaki*; Sasaki, Hajime*; Yajima, Kotaro*; Sato, Shinichiro; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 60(6), p.4446 - 4450, 2013/12

https://doi.org/10.1109/TNS.2013.2289373
 Times Cited Count：41 Percentile：94.8(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

Enhanced charge collection of GaN HEMTs induced by single ion strike

Sato, Shinichiro; Onoda, Shinobu; Hasuike, Atsushi*; Nabeshima, Yoshiaki*; Sasaki, Hajime*; Yajima, Kotaro*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Enhanced charge collection of AlGaN/GaN HEMTs induced by single ion strike

Onoda, Shinobu; Hasuike, Atsushi*; Nabeshima, Yoshiaki*; Sasaki, Hajime*; Yajima, Kotaro*; Sato, Shinichiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Enhancement of charge collection by single ion in gallium nitride (GaN) high electron mobility transistors

Onoda, Shinobu; Oshima, Takeshi; Hasuike, Atsushi*; Nabeshima, Yoshiaki*; Sasaki, Hajime*; Yajima, Kotaro*

no journal, , 

no abstracts in English

4 (Records 1-4 displayed on this page)
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