Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Hayakawa, Ryoma*; Nakae, Mari*; Yoshimura, Takeshi*; Ashida, Atsushi*; Fujimura, Norifumi*; Uehara, Tsuyoshi*; Tagawa, Masahito*; Teraoka, Yuden
Journal of Applied Physics, 100(7), p.073710_1 - 073710_8, 2006/10
Times Cited Count：12 Percentile：42.56(Physics, Applied)A structural analysis and dielectric property measurements of silicon nitride films fabricated using atmospheric pressure (AP) plasma were carried out, and the results were compared to a radio frequency (RF) plasma case. Using AP plasma, 1.8-nm-thick films composed of Si
N
O
were obtained in the temperature range from 298 to 773 K. X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry revealed 10% more nitrogen atoms corresponding to the NSi bond in the film using AP plasma than those using RF plasma. In the temperature range, the leakage current densities were not affected by the temperature. Films fabricated at 298 K showed leakage current density of as low as 7
10
A/cm
at 5MV/cm. This value was one order of magnitude lower than that using RF plasma.
Hayakawa, Ryoma*; Nakae, Mari*; Yoshida, Shinji*; Tagawa, Masahito*; Teraoka, Yuden; Yoshimura, Takeshi*; Ashida, Atsushi*; Kunugi, Shunsuke*; Uehara, Tsuyoshi*; Fujimura, Norifumi*
no journal, ,
Chemical bonding states of silicon nitride films formed by an atmospheric plasma method and a RF plasma method were analyzed by photoemission spectroscopy with synchrotron radiation and compared each other. The SiN/Si(111) interface formed by the RF plasma method consisted of 5 components. On the other hand, the SiN/Si(111) interface formed by the atmospheric plasma method consisted of 4 components. The SiN component is in the interface formed by the RF plasma method.
