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Journal Articles

Photoluminescence properties of carbon-doped $$beta$$-FeSi$$_{2}$$ nanocrystals

Maeda, Yoshihito; Nishimura, Kentaro*; Nakajima, Takahito*; Matsukura, Bui*; Narumi, Kazumasa; Sakai, Seiji

Physica Status Solidi (C), 9(10-11), p.1884 - 1887, 2012/10

 Times Cited Count:4 Percentile:90.21

We report enhancement of intrinsic photoluminescence (PL) from $$beta$$-FeSi$$_{2}$$ nanocrystals by doping carbon. In the appropriate dose of C$$_{60}$$$$^{+}$$ ion implantation into the average nanocrystal size of 14 nm, the PL intensity was enhanced by 260% and increase of the exciton binding energy of 1.8 meV in comparison with that of the non-doped nanocrystal. Furthermore, we found that there was a clear correlation between the PL enhancement and increase of the exciton binding energy. This important result suggests that carbon atoms doped in the silicide lattice may play as an isoelectronic trap and probably form bound excitons with stable states as predicted theoretically. We found a new mechanism of the PL enhancement for $$beta$$-FeSi$$_{2}$$ nanocrystals.

Journal Articles

Enhancement of IR light emission from $$beta$$-FeSi$$_{2}$$ nanocrystals embedded in Si

Maeda, Yoshihito; Nishimura, Kentaro*; Nakajima, Takahito*; Matsukura, Bui*; Narumi, Kazumasa; Sakai, Seiji

Physica Status Solidi (C), 9(10-11), p.1888 - 1891, 2012/10

 Times Cited Count:3 Percentile:85.73

We have systematically investigated photoluminescence (PL) properties of $$beta$$-phase nanocrystals which are formed by a phase transition from metastable $$gamma$$-FeSi$$_{2}$$ with a Fluorite structure to $$beta$$-FeSi$$_{2}$$, and succeeded in enhancement of the PL intensity in the optimum conditions of double annealing process. For the PL enhancement, the time of postannealing at 800$$^{circ}$$C is dominated by the time of the preannealing at 400 or 500$$^{circ}$$C which is related to amount of the $$gamma$$-phase. After discussing some possible factors, we speculate that the PL enhancement observed in this study may be attributed mainly to improvement of the interface condition between the nanocrystal and Si, because the crystallographic epitaxial relationship among the phases, Si(111)//$$gamma$$(111)//$$beta$$(202)/(220) can be maintained during precipitation of the nanocrystal on Si(111).

Oral presentation

Low temperature ion channeling at interface of iron Heusler alloy films/Ge(111)

Matsukura, Bui*; Nakajima, Takahito*; Maeda, Yoshihito; Narumi, Kazumasa; Terai, Yoshikazu*; Sado, Taizo*; Hamaya, Kohei*; Miyao, Masanobu*

no journal, , 

no abstracts in English

Oral presentation

Dependence of Mn content on interdiffusion behaviors at Fe$$_{2}$$MnSi/Ge(111) interfaces

Matsukura, Bui*; Nakajima, Takahito*; Nishimura, Kentaro*; Narumi, Kazumasa; Sakai, Seiji; Maeda, Yoshihito

no journal, , 

no abstracts in English

Oral presentation

Light emission from C$$_{60}$$ ion implanted $$beta$$-FeSi$$_{2}$$ with different crystal morphologies

Nakajima, Takahito*; Nishimura, Kentaro*; Matsukura, Bui*; Narumi, Kazumasa; Sakai, Seiji; Maeda, Yoshihito

no journal, , 

no abstracts in English

Oral presentation

Growth of $$beta$$-FeSi$$_{2}$$ nanocrystals by phase transition and enhancement of light emission property

Nishimura, Kentaro*; Nakajima, Takahito*; Nagasawa, Yoshiyuki*; Narumi, Kazumasa; Maeda, Yoshihito*

no journal, , 

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