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JAEA Reports

Status of study of long-term assessment of transport of radioactive contaminants in the environment of Fukushima (FY2018) (Translated document)

Nagao, Fumiya; Niizato, Tadafumi; Sasaki, Yoshito; Ito, Satomi; Watanabe, Takayoshi; Dohi, Terumi; Nakanishi, Takahiro; Sakuma, Kazuyuki; Hagiwara, Hiroki; Funaki, Hironori; et al.

JAEA-Research 2020-007, 249 Pages, 2020/10

JAEA-Research-2020-007.pdf:15.83MB

The accident of the Fukushima Daiichi Nuclear Power Station, Tokyo Electric Power Company Holdings, Inc. occurred due to the Great East Japan Earthquake, Sanriku offshore earthquake, of 9.0 magnitude and the accompanying tsunami. As a result, large amount of radioactive materials was released into the environment. Under these circumstances, Japan Atomic Energy Agency (JAEA) has been conducting "Long-term Assessment of Transport of Radioactive Contaminants in the Environment of Fukushima" concerning radioactive materials released in environment, especially migration behavior of radioactive cesium since November 2012. This report is a summary of the research results that have been obtained in environmental dynamics research conducted by JAEA in Fukushima Prefecture.

JAEA Reports

Status of study of long-term assessment of transport of radioactive contaminants in the environment of Fukushima (FY2018)

Nagao, Fumiya; Niizato, Tadafumi; Sasaki, Yoshito; Ito, Satomi; Watanabe, Takayoshi; Dohi, Terumi; Nakanishi, Takahiro; Sakuma, Kazuyuki; Hagiwara, Hiroki; Funaki, Hironori; et al.

JAEA-Research 2019-002, 235 Pages, 2019/08

JAEA-Research-2019-002.pdf:21.04MB

The accident of the Fukushima Daiichi Nuclear Power Station (hereinafter referred to 1F), Tokyo Electric Power Company Holdings, Inc. occurred due to the Great East Japan Earthquake, Sanriku offshore earthquake, of 9.0 magnitude and the accompanying tsunami. As a result, large amount of radioactive materials was released into the environment. Under these circumstances, JAEA has been conducting Long-term Environmental Dynamics Research concerning radioactive materials released in environment, especially migration behavior of radioactive cesium since November 2012. This report is a summary of the research results that have been obtained in environmental dynamics research conducted by JAEA in Fukushima Prefecture.

Journal Articles

In situ XAFS and HAXPES analysis and theoretical study of cobalt polypyrrole incorporated on carbon (CoPPyC) oxygen reduction reaction catalysts for anion-exchange membrane fuel cells

Asazawa, Koichiro*; Kishi, Hirofumi*; Tanaka, Hirohisa*; Matsumura, Daiju; Tamura, Kazuhisa; Nishihata, Yasuo; Saputro, A. G.*; Nakanishi, Hiroshi*; Kasai, Hideaki*; Artyushkova, K.*; et al.

Journal of Physical Chemistry C, 118(44), p.25480 - 25486, 2014/11

 Times Cited Count:20 Percentile:49.58(Chemistry, Physical)

Journal Articles

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

Okada, Hiroshi*; Nakanishi, Yasuo*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi

Nuclear Instruments and Methods in Physics Research B, 266(5), p.853 - 856, 2008/03

 Times Cited Count:8 Percentile:48.82(Instruments & Instrumentation)

To develop light emitting devices with radiation hardness, photoluminescence properties of non- and Eu-doped GaN after proton irradiation were investigated. The samples were irradiated with protons at 380 keV up to 1$$times$$10$$^{14}$$/cm$$^{2}$$ at room temperature RT. The photoluminescence properties for the samples were measured at RT. As a results, the luminescence properties for non-doped GaN much decrease due to irradiation at 1$$times$$10$$^{13}$$/cm$$^{2}$$. On the other hand, for Eu-doped GaN, the luminescence properties that correspond to the transition did not show any degradation after irradiation at 1$$times$$10$$^{14}$$/cm$$^{2}$$.

JAEA Reports

Operating Document on Management Division Waste Management Section in Tokai Works in the 2003 Fiscal Year

Kobayashi, Kentaro; Akutsu, Shigeru; Sasayama, Yasuo; Nakanishi, Masahiro; Ozone, Takashi; Tomomi, Terunuma,; Mogaki, Isao*

JNC TN8440 2005-007, 138 Pages, 2005/07

JNC-TN8440-2005-007.pdf:7.47MB

This document is announced about the task of Waste Management Section of Waste Management Division in 2003. Mainly, our tasks are fractionating, incinerating and storing low active solid waste and storing high active solid waste. In addition, we are performing required correspondence about management program of low level waste. We had treated and stored waste safely according to our plan. As a result, we have achieved following outcomes. 1. We incinerated the combustible low active solid waste that is generated by the operation of Tokai Reprocessing Plant and the recovery operation of incident at Low Active Liquid Waste Asphalt Solidification Facility. Waste of this recovery operation is stored in the 2nd Low Active Liquid Waste Asphalt Solidification Storage Facility. We incinerated 58 ton of wastes. 2. We stored low active solid waste 854 drums that accommodate 200L. According to the time of Low-Level Waste Treatment Facility completion, we will be able to avoid full of storage. 3. We stored high active solid waste of 148 drums that accommodate 200L. For the time being, there is no problem as regards the administration of storage facility. 4. We carried out the management program of low level solid waste according to plan.

Journal Articles

Improvement of luminescence capability of Tb$$^{3+}$$-related emission by Al$$_{x}$$Ga$$_{1-x}$$N

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Physica Status Solidi (B), 240(2), p.372 - 375, 2003/11

 Times Cited Count:19 Percentile:64.46(Physics, Condensed Matter)

Luminescence propeties of Tb-doped Al$$_{x}$$Ga$$_{1-x}$$N were studied. The samples were grown on sapphire substrates using OMVPE. Tb implantation was cariied out to introduce Tb into samples. After implantation, samples were annealed at 1000 to 1150 $$^{o}$$C in 10% NH$$_{3}$$ diluted with N$$_{2}$$. The luminescence intensity for Al$$_{x}$$Ga$$_{1-x}$$N x=0.1 is 5 times stronger than that for x=0 at 14 K. The luminesecence intensity for GaN rapidly decreases with temperature and its activation enegy is 7.8 meV. With increasing Al content, the activation enegy increases, and the activation energy for Al$$_{0.1}$$Ga$$_{0.9}$$N is 70 meV.

Journal Articles

Effects of Al composition on luminescence properties of europium implanted Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1)

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Shibata, Tomohiko*; Tanaka, Mitsuhiro*

Physica Status Solidi, 0(7), p.2623 - 2626, 2003/07

In our previous study, it was reported that Eu-doped Nitride semiconductors show luminescence propetires. In this study, we investigate the relationship between luminescence properties and Al composition using Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1). Al$$_{x}$$Ga$$_{1-x}$$N were grown using OMVPE. Eu atoms were doped into the samples by ion implantation (200keV). After implantation, the samples were annealed to remove residual damege. Luminescence propreties of the samples were measured using photoluminescence and cathodeluminescence. As a result, luminescence at 621 nm which relates 4f-4f transition were observed for all samples (x=0 to 1). As for intensity, samples with x=0.5 show the strongest luminescence. This result can be interpreted in terms of the internal stress of crystals by the existence of Al atoms.

Journal Articles

Effects of implantation conditions on the luminescence properties of Eu-doped GaN

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Nakao, Setsuo*; Saito, Kazuo*; Kim, Y. T.*

Nuclear Instruments and Methods in Physics Research B, 206, p.1033 - 1036, 2003/05

 Times Cited Count:18 Percentile:72.91(Instruments & Instrumentation)

Photo luminescence properties of GaN implanted with Eu ions were studied. The GaN was epitaxialy grown on sapphire substrate. Multiple-implantation at RT was done to form box profile of Eu at a mean Eu concentration from 2.8$$times$$10$$^{19}$$ to 2.8$$times$$10$$^{20}$$/cm$$^{3}$$. Samples were annealed in NH$$_{3}$$, N$$_{2}$$ at 900-1050$$^{circ}$$C for 5-30 min after implantation. As the result, sharp emission peaks around 621nm which is assigned as 4f-4f transition were observed. The intensity of peaks increases with increasing Eu concentration and saturate at Eu concentrations around 2.8$$times$$10$$^{20}$$/cm$$^{3}$$.

Journal Articles

Effect of alloy composition on photoluminescence properties of europium implanted AlGaInN

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Physica Status Solidi (C), 0(1), p.461 - 464, 2002/12

no abstracts in English

Journal Articles

Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Applied Physics Letters, 81(11), p.1943 - 1945, 2002/09

 Times Cited Count:19 Percentile:58.12(Physics, Applied)

Eu-doped GaN samples were irradiated with 3MeV-electrons at RT at 10$$^{16}$$ - 3x10$$^{17}$$/cm$$^{2}$$. Photoluminescence (PL) propeties related to $$^{5}$$D$$_{0}$$-$$^{7}$$F$$_{2}$$ in Eu$${3+}$$ were studied using He-Cd laser as excitation source. As the results, it is found that PL intensity is not affected by electron irradiation.Considering that PL peak related to near-band-edge strongly decreases due to electron irradiation, we can conclude that PL related to $$^{5}$$D$$_{0}$$-$$^{7}$$F$$_{2}$$ in Eu$${3+}$$ has very strong radiation resistance.

Journal Articles

Photoluminescence properties of Eu-doped GaN by ion implantation

Nakanishi, Yasuo*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Sakai, Shiro*

IPAP Conference Series 1 (Proceedings of International Workshop on Nitride Semiconductors), p.486 - 489, 2000/11

no abstracts in English

Oral presentation

X-ray irradiation effect of KTaO$$_{3}$$; Measurement of thermally stimulated electrical currents

Nishihata, Yasuo; Nakanishi, Yusuke*; Sakaue, Kiyoshi*

no journal, , 

no abstracts in English

Oral presentation

Depositional sequence of the Post-LGM incised-valley fill controlled by seismic crustal deformation and large-scale lahars; An Example of SKM core obtained from the Sukumo coastal lowland along the Nankai Trough, Japan

Nanayama, Futoshi*; Yamaguchi, Tatsuhiko*; Nakanishi, Toshimichi; Tsuji, Tomohiro*; Ikeda, Michiharu*; Kondo, Yasuo*; Miwa, Michiko*; Sugiyama, Shinji*; Kimura, Kazunari*

no journal, , 

The characteristics of the post-LGM incised valley fills and the depositional sequence were examined the SKM core collected in the Sukumo coastal lowland, where is expected to huge seismic subsidence due to the Nankai Trough great earthquakes. Our sedimentological, radiocarbon dating and paleoenvironmental results are as bellows. Sediments of the SKM core clearly show a succession influenced by post-glacial sea level change. The Matsuda River incised valley was formed in LGM and filled by fluvial sand and gravels in late Pleistocene. After the postglacial transgression, sea level reached -30 m (a.s.l.) at 9.8 ka and the incised valley changed to an estuary environment. The sea level continued to rise and it became an inner bay mud bottom environment, and reaching a maximum water depth was at 7.5 ka. The 7.3 ka Kikai caldera eruption in southern Kyushu caused heavy K-Ah ash fall in southwestern Shikoku, and then large-scale lahars frequently occurred immediately after the ash fall because of the vicinity of volcanic source. After ash fall, the K-Ah secondary sediments rapidly deposited on the inner bay environment and caused forced regression. After 7.0 ka, the growth of the delta became active ahead of the other regions, which may be due to the large K-Ah ash fall. At 5 ka, the sea level reached + 2.5 m (a.s.l.) estimated by the Sukumo midden and this altitude is recognized as the Holocene marine limit in this area. The information on relative sea level change during the past 10000 years has revealed that the Sukumo Bay area has not subsided due to seismic crustal deformation.

Oral presentation

Middle Holocene changes in relative sea-level on western Shikoku Island, Japan

Yamaguchi, Tatsuhiko*; Tsuji, Tomohiro*; Nanayama, Futoshi*; Nakanishi, Toshimichi; Ikeda, Michiharu*; Kondo, Yasuo*; Miwa, Michiko*; Hamada, Yohei*

no journal, , 

Shikoku Island is situated 150 km northwest of the Nankai trough that has developed in response to the convergence of the subducting Philippine Sea Plate and overriding Eurasian Plate. This tectonism causes deformation of the island, megathrust earthquakes, and tsunamis. Shikoku Island experiences coseismic and interseismic deformation. The middle Holocene tectonics of the island are still poorly understood. Relative sea-level (RSL) changes indicated by coastal sediments potentially record seismic uplift and subsidence. To infer RSL changes between 8 and 4 cal. kyr BP, we studied Holocene ostracode assemblages from the SKM drill core in Sukumo, southwest Shikoku Island (Tsuji et al., 2018, JpGU, MIS11-P19), and from six cores in the northern part of the island (Yasuhara et al., 2005, Palaeo3; Yasuhara and Seto, 2006, Paleontol. Res. 10). To estimate paleo-water depth and RSL, we employed the ostracode assemblages and modern analog technique. The SKM core is composed of conglomerate, ash, and mud chiefly. Its geological age was examined, using the $$^{14}$$C dating method (Nakanishi et al., 2019, Radiocarbon). The differences in RSL were identified across the island, possibly due to convergence of the Philippine Sea Plate.

Oral presentation

Irradiation effects on rare-earth doped GaN thin films

Okada, Hiroshi*; Nakanishi, Yasuo*; Wakahara, Akihiro*; Yoshida, Akira*; Sato, Shinichiro; Oshima, Takeshi

no journal, , 

no abstracts in English

15 (Records 1-15 displayed on this page)
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