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Mo/
Tc solution, 1Suzuki, Yumi*; Nakano, Hiroko; Suzuki, Yoshitaka; Ishida, Takuya; Shibata, Akira; Kato, Yoshiaki; Kawamata, Kazuo; Tsuchiya, Kunihiko
JAEA-Technology 2015-031, 58 Pages, 2015/11
JAEA-Technology-2015-031.pdf:14.57MB
Technetium-99m (Tc) is one of the most commonly used radioisotopes in the field of nuclear medicine. In the Japan Atomic Energy Agency (JAEA), the research and development (R&D) have been carried out for production of molybdenum-99 (Mo) by (n, 
) method, a parent nuclide of Tc, with the Japan Material Testing Reactor (JMTR). On the other hand, the new project as "Domestic Production of Medical Radioisotope (Technetium preparation) in Japan" was adopted in the Tsukuba International Strategic Zone on October, 2013 and the demonstration tests will be planned for the domestic production of Mo/Tc with the JMTR. Thus, new facilities and analysis devices were equipped in the JMTR Hot Laboratory in 2014 as the part of this project. As the part of the analytical device equipment, the -TLC analyzer and the radiation detector connected with the High Performance Liquid Chromatography (HPLC) were installed for quality inspection of the Mo/Tc solution and the extracted Tc solution in the JMTR Hot Laboratory. The performance tests of these devices such as detection sensitivity, resolution, linearity and selectivity of energy range were carried out with 
Cs and 
Eu as alternative radionuclides of Mo and Tc, respectively. In the results, bright prospects were obtained concerning the quality inspection of the Mo/Tc and Tc solutions using these devices. This report describes the results of those performance tests.
Mikami, Takashi*; Nakano, Masanori*; Shibata, Takuya; Seko, Noriaki
Setsubi To Kanri, 47(4), p.95 - 99, 2013/04
no abstracts in English
Kaminuma, Takuya*; Suzuki, Yoshiyuki*; Shirai, Katsuyuki*; Mizui, Toshiyuki*; Noda, Shinei*; Yoshida, Yukari*; Funayama, Tomoo; Takahashi, Takeo*; Kobayashi, Yasuhiko; Shirao, Tomoaki*; et al.
Journal of Radiation Research, 51(6), p.627 - 631, 2010/11
Times Cited Count：9 Percentile：33.86(Biology)Izumo, Hironobu; Chimi, Yasuhiro; Ishida, Takuya; Kawamata, Kazuo; Inoue, Shuichi; Ide, Hiroshi; Saito, Takashi; Ise, Hideo; Miwa, Yukio; Ugachi, Hirokazu; et al.
JAEA-Technology 2009-011, 31 Pages, 2009/04
JAEA-Technology-2009-011.pdf:4.38MB
Regarding Irradiation Assisted Stress Corrosion Cracking (IASCC) for austenitic stainless steel of the light water reactor (LWR), a lot of data that concerns the post irradiation evaluation (PIE) is acquired. However, IASCC occurs in LWR condition. Therefore, it is necessary to confirm adequacy of the PIE data comparing the experiment data under the simulated LWR condition. Bigger specimen is needed to acquire the effective data for the destruction dynamics in the study of stress corrosion cracking under neutron irradiation condition. Therefore, development of a new crack growth unit which can load to bigger is necessary to the neutron irradiation test. As a result, a prospect was provided in the unit that could load to specimen by changing load mechanism to the lever type from the linear type. And also, in the development of crack propagation unit, some technical issues were extracted from the discussion of the unit structure adopting the LVDT (Linear Variable Differential Transformer).
2 surfaceYamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Goto, Seiichi*; Nakano, Takuya*; Suemitsu, Maki*; Narita, Yuzuru*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
We have investigated the initial oxidation process on an Si(110)-162 surface by real time synchrotron radiation photoemission spectroscopy (SR-XPS). As a result, a rapid initial oxidation regime was found to exist on this surface, which is not present on other crystal orientations. Analyses of the O1s spectra suggest insertion of oxygen atoms at the Si-Si bonds as the predominant process during initial oxidation. The rapid initial oxidation is accompanied by decrease of the Si2p subpeak that is related to Si(110)-162 reconstruction, indicating the preferential oxidation at the pentagon pair.
2 surfaceTogashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Kato, Atsushi*; Hasegawa, Satoshi*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; et al.
no journal, ,
no abstracts in English
2Nakano, Takuya*; Hasegawa, Satoshi*; Togashi, Hideaki*; Kato, Atsushi*; Goto, Seiichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*
no journal, ,
no abstracts in English
2 surface and surface reconstructionTogashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Initial oxidaion processes at Si(110)-162 clean surface with O
mokecules have been observed by real-time SR-XPS and STM methods. SR-XPS experiments were performed at BL23SU in SPring-8 and STM experiments were performed in JAEA Tokai research center. From comparison of oxygen uptake curves of Si(110)-162 with Si(001)-21, following conclusions were obtained. Rapid initial oxidation occured at the Si(110) surface and layer-by-layer oxidation was also took place. In-situ observation with STM revealed that the rapid initial oxidation was due to oxygen adsorption at pentagon-pair Si atoms on the topmost surface, at least 4 kinds of oxygen-adsorbed states, and the DD site was a condensed oxidation state.
2 surface observed by SR-PESYamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Nakano, Takuya*; Goto, Seiichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*
no journal, ,
In this study, we have investigated adsorption of oxygen molecules on Si(110)-162 clean surface at room temperature by synchrotron radiation photoemission spectros (SR-PES). The SR-PES experiments were conducted at the surface chemistry end-station of BL23SU in the SPring-8. The photon energy was 334 eV. Samples were B-doped p-type Si(110) wafers, and were flash-annealed in an UHV ambient prior to the exposure to oxygen gas at room temperature at the gas pressure of 6.710
Pa. By observing a structural change after a mild annealing, we have confirmed presence of a metastable state of oxidation on this RT-oxidized Si(110) surface.
2 surface using SR-PES and STMYamamoto, Yoshihisa*; Togashi, Hideaki*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Kato, Atsushi*; Hasegawa, Satoshi*; Konno, Atsushi*; Suemitsu, Maki*; Yoshigoe, Akitaka; et al.
no journal, ,
We have investigated that initial oxidation processes of Si(110) surfaces at room temperature and thermal stability of the oxide layer via synchrotron radiation photoemission spectroscopy (SR-PES) and scanning tunneling microscopy (STM). We found in the SR-PES experiments that metastable oxygen-condensed local structures were formed in the early stage of Si(110) oxidation at room temperature. After thermal annealing of 15 min at 573 K, highly-oxidized components of Si2p spectrum, Si
and Si
, were enhanced whereas Si
was decreased. This is due to structural relaxation of the strained metastable oxidation structures on the surface and following change to stable highly-oxidized structures. Furthermore, the structural change from the metastable structure in the surface oxidized at room temperature to the stable cluster structure was directly observed via STM.
2 surface by Si 2p photoemission spectroscopyYamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Goto, Seiichi*; Nakano, Takuya*; Suemitsu, Maki*; Narita, Yuzuru*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Initial oxidation process of Si(110)-162 clean surface has been investigated with synchrotron radiation photoemission spectroscopy. We found that the intensity of the alpha peak, one of the surface core level shifts in the Si 2p photoemission spectra, decreased in the just early stage of oxidation. And it was possible to relate this component with the rapid initial oxidation, which was unique to Si(110) surface. According to recent studies, this component was attributed to the 1st and the 2nd Si layer. We also found that there were significant amount of Si component just after introducing the oxygen gas, which was contrast to the oxidation of Si(001) surface.
Togashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Oxygen-adsorbed Si(110)-162 surfaces at room temperature and their thermally-treated surfaces were analyzed by real-time photoemission spectroscopy with synchrotron radiation (SR-PES) and scanning tunneling microscopy (STM). Thermal stability of the oxygen-adsorbed Si(110) surfaces was clearified. By thermal annealing of Si(110) surface exposed to 10L oxygen gas at room temperature, photoemission peak positions of Si and Si components were shifted to higher energy side by 0.20eV and 0.12eV,respectively, and reached nearly to those of thermal oxide films. This behaviour is due to change of Si-O-Si bond angle and Si-O bond length. The STM observation for Si(110) surfaces revealed that the oxygen-adsorbed surface structure changed to the condensed oxide structure by thermal annealing. These SR-PES and STM results showed that the oxygen-adsorbed Si(110)-162 structure was metastable and changed to more stable condensed oxide structure by thermal annealing.
oxidation of H-terminated Si(110) surfaceNakano, Takuya*; Togashi, Hideaki*; Matsumoto, Mitsutaka*; Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*
no journal, ,
Time evolution of oxide layers in the H-terminated Si(110) surface by the UV/O treatment at room temperature was observed by photoemission spectroscopy with synchrotron radiation. Special oxidation mechanisms for the H-terminated Si(110) surface were found. Si(110) surfaces were hydrogenated by HF treatments. The surface was irradiated and oxidized by UV light (253.7, 184.9 nm) of a low pressure Hg lamp in the air. The UV/O irradiation time dependence of oxide thickness showed a step-wise profile. The step width was about 0.2 nm. The value is close to one oxide layer thickness (0.19 nm) for the Si(110) surface. Si atoms at the Si(110) surface are categolized to A bonds which are chain-like dense bonds, and B bonds which connect up and down A bond chains. The step-wise oxidation behaviour is reasonable if oxidation at the B bonds, in which oxidation strain is smaller than that of A bonds, has larger reaction rate than at the A bonds.
Nakano, Masanori*; Muraki, Shinsaku*; Nishino, Toru*; Chikaishi, Naoki*; Mikami, Takashi*; Shibata, Takuya; Hoshina, Hiroyuki; Saiki, Seiichi; Ueki, Yuji; Kasai, Noboru; et al.
no journal, ,
no abstracts in English
Tsuchiya, Kunihiko; Takeuchi, Tomoaki; Otsuka, Noriaki; Shibata, Hiroshi; Nakano, Hiroko; Ishida, Takuya; Uehara, Toshiaki; Yamamoto, Keiichi; Saito, Takashi; Nakamura, Jinichi; et al.
no journal, ,
no abstracts in English
