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Journal Articles

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by X-ray diffraction

Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*

AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03

 Times Cited Count:4 Percentile:19.01(Nanoscience & Nanotechnology)

Journal Articles

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

 Times Cited Count:5 Percentile:42.01(Crystallography)

Journal Articles

X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

Journal of Physics; Conference Series, 425(20), p.202010_1 - 202010_4, 2013/03

 Times Cited Count:1 Percentile:52.52(Instruments & Instrumentation)

Journal Articles

${it In situ}$ X-ray characterization of wurtzite formation in GaAs nanowires

Krogstrup, P.*; Morten Hannibal, M.*; Hu, W.; Kozu, Miwa*; Nakata, Yuka*; Nygard, J.*; Takahashi, Masamitsu; Feidenhans'l, R.*

Applied Physics Letters, 100(9), p.093103_1 - 093103_4, 2012/02

 Times Cited Count:43 Percentile:82.61(Physics, Applied)

Oral presentation

In-situ X-ray diffraction during Au-assisted growth of GaAs nanowires

Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu

no journal, , 

Oral presentation

Characterization of self-assisted InAs nanowire on Si substrate during MBE growth using in-situ X-ray diffraction

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

no journal, , 

Oral presentation

In situ synchrotron X-ray diffraction analysis of structure transformation of Au-assisted GaAs nanowires

Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

In situ X-ray diffraction study of GaAs growth on Si

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Oshita, Yoshio*

no journal, , 

Oral presentation

Crystal structure change at the time of GaAs nanowire growth interruption

Kozu, Miwa; Takahashi, Masamitsu; Hu, W.; Nakata, Yuka*

no journal, , 

no abstracts in English

Oral presentation

Growth-rate dependence of polytypes in Au-assisted GaAs nanowires

Takahashi, Masamitsu; Kozu, Miwa; Hu, W.; Nakata, Yuka*

no journal, , 

no abstracts in English

Oral presentation

X-ray diffraction from polytypes in Au-assisted GaAs nanowries

Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.*; Nakata, Yuka

no journal, , 

Oral presentation

In situ XRD/SAXS measurements in Au-catalyzed InGaAs nanowires

Sasaki, Takuo; Deki, Ryota*; Nakata, Yuka; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

Interfacial structure of InAs epitaxial film grown on Si(111)-(4$$times$$1)-In surface

Nakata, Yuka; Sasaki, Takuo; Deki, Ryota*; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*

no journal, , 

Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, $$L$$, and growth time, $$t$$, were found to follow $$Lpropto t^{1/2}$$ in accordance with the growth limited by the binding of Ga with As at step edges.

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