In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

https://doi.org/10.1016/j.jcrysgro.2012.12.119

X-ray characterization of wurtzite formation in GaAs nanowires

Krogstrup, P.*; Morten Hannibal, M.*; Hu, W.; Kozu, Miwa*; Nakata, Yuka*; Nygard, J.*; Takahashi, Masamitsu; Feidenhans'l, R.*

Applied Physics Letters, 100(9), p.093103_1 - 093103_4, 2012/02

https://doi.org/10.1063/1.3688489

Characterization of self-assisted InAs nanowire on Si substrate during MBE growth using in-situ X-ray diffraction

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

no journal, , 

In situ X-ray diffraction study of GaAs growth on Si

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Oshita, Yoshio*

no journal, , 

Growth-rate dependence of polytypes in Au-assisted GaAs nanowires

Takahashi, Masamitsu; Kozu, Miwa; Hu, W.; Nakata, Yuka*

no journal, , 

no abstracts in English

In situ XRD/SAXS measurements in Au-catalyzed InGaAs nanowires

Sasaki, Takuo; Deki, Ryota*; Nakata, Yuka; Takahashi, Masamitsu

no journal, , 

no abstracts in English

In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*

no journal, , 

Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, , and growth time, , were found to follow in accordance with the growth limited by the binding of Ga with As at step edges.