Refine your search:     
Report No.
 - 
Search Results: Records 1-20 displayed on this page of 40

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Effects of toroidal rotation shear and magnetic shear on thermal and particle transport in plasmas with electron cyclotron heating on JT-60U

Yoshida, Maiko; Honda, Mitsuru; Narita, Emi*; Hayashi, Nobuhiko; Urano, Hajime; Nakata, Motoki; Miyato, Naoaki; Takenaga, Hidenobu; Ide, Shunsuke; Kamada, Yutaka

Nuclear Fusion, 55(7), p.073014_1 - 073014_9, 2015/07

 Times Cited Count:13 Percentile:61.42(Physics, Fluids & Plasmas)

Conditions without the increases in the thermal and particle transport with ECH have been experimentally investigated in positive magnetic shear (PS), weak magnetic shear (WS) and reversed magnetic shear (RS) plasmas with internal transport barriers (ITBs) on JT-60U. The ion heat diffusivity around an internal transport barrier in the ion temperature ($$T_{rm i}$$-ITB) remains constant with ECH when a large negative toroidal rotation shear is formed before the ECH. The condition does not depend on the electron to ion temperature ratio ($$T_{rm e}$$/$$T_{rm i}$$) and ECH power. The electron heat diffusivity around a $$T_{rm e}$$-ITB stays constant with ECH when the magnetic shear is negative around the Te-ITB region. Effective particle transport remains constant or reduces during ECH under the condition of negative magnetic shear.

Journal Articles

Gyrokinetic analyses of core heat transport in JT-60U plasmas with different toroidal rotation direction

Narita, Emi*; Honda, Mitsuru; Hayashi, Nobuhiko; Urano, Hajime; Ide, Shunsuke; Fukuda, Takeshi*

Plasma and Fusion Research (Internet), 10, p.1403019_1 - 1403019_11, 2015/03

Journal Articles

Physics comparison and modelling of the JET and JT-60U core and edge; Towards JT-60SA predictions

Garcia, J.*; Hayashi, Nobuhiko; Baiocchi, B.*; Giruzzi, G.*; Honda, Mitsuru; Ide, Shunsuke; Maget, P.*; Narita, Emi*; Schneider, M.*; Urano, Hajime; et al.

Nuclear Fusion, 54(9), p.093010_1 - 093010_13, 2014/09

 Times Cited Count:32 Percentile:88.47(Physics, Fluids & Plasmas)

Journal Articles

Turbulence analyses of improved electron energy confinement in H-mode plasmas with gyrokinetic calculations

Narita, Emi; Honda, Mitsuru; Hayashi, Nobuhiko; Takizuka, Tomonori*; Ide, Shunsuke; Itami, Kiyoshi; Isayama, Akihiko; Fukuda, Takeshi*

Plasma and Fusion Research (Internet), 8, p.1403082_1 - 1403082_8, 2013/06

Journal Articles

Analysis of $$T$$$$_{rm e}$$/$$T$$$$_{rm i}$$ effect on confinement properties

Narita, Emi*; Takizuka, Tomonori*; Hayashi, Nobuhiko; Fujita, Takaaki; Ide, Shunsuke; Honda, Mitsuru; Isayama, Akihiko; Itami, Kiyoshi; Kamada, Yutaka; Tanaka, Yasuyuki*; et al.

Plasma and Fusion Research (Internet), 7(Sp.1), p.2403102_1 - 2403102_5, 2012/07

Journal Articles

Bonding structure of ultrathin oxides on Si(110) surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Suemitsu, Maki*; Narita, Yuzuru*; Teraoka, Yuden; Yoshigoe, Akitaka

Materials Research Society Symposium Proceedings, Vol.1074, p.36 - 40, 2008/00

In this study, we have investigated the bonding structure of ultrathin oxide films on Si(110) surface by real-time SR-PES experiments. Experiments were conducted at surface chemistry end-station settled at BL23SU in SPring-8. The oxidation temperature was 813 K and the O$$_{2}$$ pressure was 1.1$$times$$10$$^{-5}$$ Pa. As a result, we found that one of the surface core-level shifts in Si 2p spectrum, related to the 1st and the 2nd layer Si atoms, decreases rapidly, coincident with the rapid initial development of the O1s spectrum. This indicates high reactivity of the Si(110)-16$$times$$2 reconstructed surface with oxygen molecules.

Journal Articles

Real-time observation of initial thermal oxidation on Si(110)-16$$times$$2 surfaces by O 1s photoemission spectroscopy using synchrotron radiation

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*; Enta, Yoshiharu*

Japanese Journal of Applied Physics, Part 1, 46(4B), p.1888 - 1890, 2007/04

 Times Cited Count:12 Percentile:46.58(Physics, Applied)

Initial oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy. The time evolution of the O 1s spectrum shows occurrence of rapid oxidation just after the introduction of the oxygen molecules, which is evidenced by the considerable peak intensity corresponding to oxygen exposure of as low as 1.5L (1L=1.33$$times$$10$$^{-4}$$ Pa s). This initial oxide is dominated by a state with a relatively low binding energy, which is gradually replaced by a state with a relatively high binding energy with the increase of the oxygen exposure, resulting in the low-KE shift of the O 1s peak. Comparison with previously reported O 1s spectra from dry-oxidized Si(111) surface suggests oxidation at or around the adatoms of Si(110)-16$$times$$2 clean surface as a likely oxidation state for this low-binding-energy peak.

Journal Articles

Comparison of initial oxidation between Si(110) and Si(100) surfaces; From real-time photoemission spectroscopy

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*

Shingaku Giho, 106(108), p.61 - 63, 2006/06

no abstracts in English

Journal Articles

Real-time observation of initial thermal oxidation on Si(110)-16$$times$$2 surface by photoemission spectroscopy

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Enta, Yoshiharu*; Narita, Yuzuru*

ECS Transactions, 3(2), p.311 - 316, 2006/00

Initial thermal oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy with synchrotron radiation. The Si(110) initial oxidation is characterized by presence of a rapid oxidation just after the introduction of gaseous oxygen molecules. Peak separation of the O1s photoemission spectra suggests the presence of at least two distinct oxidation sites on the surface, which may reflect the complicated surface structure of the Si(110)-16$$times$$2 reconstruction.

Oral presentation

Initial oxidation of Si(110) as evaluated with real-time XPS

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*

no journal, , 

Initial kinetics in dry oxidation of Si(110) surface, a key technology in the next-generation CMOS technology, has been investigated by using synchrotron-radiation photoemission spectroscopy. As a result, the uptake curve of the Si(110) oxide in its high-pressure-low-temperature reaction regime is found to consist of three characteristic time domains, in sharp contrast with the single domain obtained on Si(001). The difference is understood in terms of the different atomistic arrangement on the surface.

Oral presentation

Comparison of initial oxidation between Si(110) and Si(100) surfaces; From real-time photoemission spectroscopy

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*

no journal, , 

By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16$$times$$2 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an O1s state with a weaker binding energy. As the oxidation proceeds, another O1s state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 16$$times$$2 reconstruction of the Si(110) surface.

Oral presentation

Observation of initial oxidation process on Si(110)-16$$times$$2 by real-time photoemission spectroscopy, 1

Togashi, Hideaki*; Kato, Atsushi*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*

no journal, , 

Initial oxidation processes of Si(110) surface have not been studied although they are important for the next generation device. Now we observed time evolution of oxygen coverage at the Si(110)-16$$times$$2 surface in the initial oxidation region by using real-time photoemission spectroscopy with synchrotron radiation. As a conclusion, rapid initial oxidation processes, in which several tens per cent of the surface was oxidized just after oxygen exposure, were found in experimental conditions of 813 K and oxygen pressure of 1.1$$times$$10$$^{-5}$$ Pa. Such a rapid initial oxidation process has not been observed in the initial oxidation of Si(100)-2$$times$$1 surface. This phenomenon may be related with adatom clusters, which exist periodically on the Si(110)-16$$times$$2 surface. For example, An adatom cluster, which consists of five Si atoms, shares 0.25 ML on the Si(110)-16$$times$$2 reconstruction surface in the pentagon-pair model. This model consistents with the initial oxygen coverage obtained in this experiment.

Oral presentation

Observation of initial oxidation process on Si(110)-16$$times$$2 by real-time photoemission spectroscopy, 2

Kato, Atsushi*; Togashi, Hideaki*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

Initial oxidation processes of ultra-thin oxide layers on Si(110)-16$$times$$2 surfaces have not been studied yet. Making clear the chemical reaction mechanisms is, however, important for device fabrication. We observed time evolution of oxide coverage on the Si(110)-16$$times$$2 surface at room temperature. The O1s photoemission spectrum increased with increasing oxygen dose and the peak position shifted to higher binding energy side at oxygen pressure of 1.1$$times$$10$$^{-5}$$ Pa. This peak shift is responsible to two kinds of peak components and their independent time evolutions. Time evolution of each component, behaviour of Si2p spectrum, and thermal stability of the surface reveal that the oxidation of Si(110) surface has different characters in compared with that of Si(100) surface. These facts can be understood on the basis of adatom clusters on the Si(110) surface.

Oral presentation

SR-XPS analysis for initial oxidation processes of Si(110) surfaces

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*

no journal, , 

no abstracts in English

Oral presentation

Observation of initial oxidation process on Si(110)-16$$times$$2 by real-time photoemission spectroscopy, 1

Togashi, Hideaki*; Kato, Atsushi*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Takahashi, Yuya*; Asaoka, Hidehito

no journal, , 

no abstracts in English

Oral presentation

Observation of initial oxidation process on Si(110)-16$$times$$2 by real-time photoemission spectroscopy, 2

Kato, Atsushi*; Togashi, Hideaki*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Takahashi, Yuya*; Asaoka, Hidehito

no journal, , 

no abstracts in English

Oral presentation

Analysis of initial oxidation on Si(110)-16$$times$$2 surface using synchrotron radiation photoelectron spectroscopy

Kato, Atsushi*; Togashi, Hideaki*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Takahashi, Yuya*; Asaoka, Hidehito

no journal, , 

no abstracts in English

Oral presentation

Real time SR-XPS on initial oxidation process at Si(110)-16$$times$$2 surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Goto, Seiichi*; Nakano, Takuya*; Suemitsu, Maki*; Narita, Yuzuru*; Yoshigoe, Akitaka; Teraoka, Yuden

no journal, , 

We have investigated the initial oxidation process on an Si(110)-16$$times$$2 surface by real time synchrotron radiation photoemission spectroscopy (SR-XPS). As a result, a rapid initial oxidation regime was found to exist on this surface, which is not present on other crystal orientations. Analyses of the O1s spectra suggest insertion of oxygen atoms at the Si-Si bonds as the predominant process during initial oxidation. The rapid initial oxidation is accompanied by decrease of the Si2p subpeak that is related to Si(110)-16$$times$$2 reconstruction, indicating the preferential oxidation at the pentagon pair.

Oral presentation

Synchrotron radiation photoemission spectroscopy for initial oxidation processes at Si(110)-16$$times$$2 surface

Togashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Kato, Atsushi*; Hasegawa, Satoshi*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; et al.

no journal, , 

no abstracts in English

Oral presentation

Observation of SR-XPS O1s spectra at high temperature in initial oxidation processes of Si(110)16$$times$$2 surfaces

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Kato, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

no abstracts in English

40 (Records 1-20 displayed on this page)