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Iwamoto, Yosuke; Fukuda, Mitsuhiro*; Sakamoto, Yukio; Tamii, Atsushi*; Hatanaka, Kichiji*; Takahisa, Keiji*; Nagayama, Keiichi*; Asai, Hiroaki*; Sugimoto, Kenji*; Nashiyama, Isamu*
Nuclear Technology, 173(2), p.210 - 217, 2011/02
Times Cited Count：32 Percentile：89.70(Nuclear Science & Technology)The 30 
white neutron beam at RCNP facility has been characterized as a prove suitable for testing of single event effects (SEEs) in semiconductors in the neutron energy range from 1 to 300 MeV using the 392-MeV proton incident reaction on a 6.5-cm-thick tungsten target. The neutron spectrum in measurements were demonstrated to provide a neutron spectrum similar to the terrestrial one at sea level, but with an enhancement in the intensity of a factor of 1.5
10
. The average neutron intensity and spectrum from 10 to 300 MeV at RCNP were almost same as those at WNR. The calculated RCNP neutron flux using PHITS generally agreed with the measured RCNP data within a factor of two. As the neutron density per pulse for RCNP is 500 times lower than that for WNR, the pileup probability of single-event transient currents and false multiple-bit upsets is reduced. Such conditions at RCNP are suitable for accelerated SEE testing to get meaningful results in realistic time frame.
Hirao, Toshio; Ito, Hisayoshi; Okada, Sohei; Nashiyama, Isamu*
Radiation Physics and Chemistry, 60(4-5), p.269 - 272, 2001/03
Times Cited Count：5 Percentile：38.49(Chemistry, Physical)no abstracts in English
Oshima, Takeshi; Abe, Koji*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Nashiyama, Isamu*; Okada, Sohei
Applied Physics A, 71(2), p.141 - 145, 2000/10
no abstracts in English
-implanted 6H-SiC studied by monoenergetic positron beamsUedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Frank, T.*; Pensl, G.*; Suzuki, Ryoichi*; Odaira, Toshiyuki*; et al.
Journal of Applied Physics, 87(9), p.4119 - 4125, 2000/05
Times Cited Count：12 Percentile：48.81(Physics, Applied)no abstracts in English
Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu
Materials Science Forum, 338-342, p.1299 - 1302, 2000/00
no abstracts in English
Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; et al.
Materials Science Forum, 338-342, p.857 - 860, 2000/00
no abstracts in English
Kawatsura, Kiyoshi*; Takeshima, Naoki*; Terazawa, Norihisa*; Aoki, Yasushi; Yamamoto, Shunya; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi
JAERI-Review 99-025, TIARA Annual Report 1998, p.188 - 190, 1999/10
no abstracts in English
Kawatsura, Kiyoshi*; Takeshima, Naoki*; Terazawa, Norihisa*; Aoki, Yasushi*; Yamamoto, Shunya; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi
JAERI-Review 99-025, TIARA Annual Report 1998, p.188 - 190, 1999/10
no abstracts in English
Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*
Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00
no abstracts in English
Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.
Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00
no abstracts in English
-implanted 6H-SiC studied by monoenergetic positron beamsUedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu
Journal of Applied Physics, 86(10), p.5392 - 5398, 1999/00
Times Cited Count：10 Percentile：45.59(Physics, Applied)no abstracts in English
Wu, Z. P.*; Miyashita, Atsumi; Yamamoto, Shunya; Abe, Hiroaki; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi
Journal of Applied Physics, 86(9), p.5311 - 5313, 1999/00
Times Cited Count：59 Percentile：88.25(Physics, Applied)no abstracts in English
-ray irradiation effects on 6H-SiC MOSFETOshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu
Mater. Sci. Eng. B, 61-62, p.480 - 484, 1999/00
Times Cited Count：24 Percentile：73.49(Materials Science, Multidisciplinary)no abstracts in English
Hirao, Toshio; ; Sakai, Takuro; Nashiyama, Isamu
Nuclear Instruments and Methods in Physics Research B, 158(1-4), p.260 - 263, 1999/00
Times Cited Count：9 Percentile：56.46(Instruments & Instrumentation)no abstracts in English
Saido, Masahiro; Fukuda, Mitsuhiro; Arakawa, Kazuo; Tajima, Satoshi; Sunaga, Hiromi; Yotsumoto, Keiichi; Kamiya, Tomihiro; Tanaka, Ryuichi; Hirao, Toshio; Nashiyama, Isamu; et al.
Proceedings of 1999 IEEE Nuclear and Space Radiation Effects Conference, p.117 - 122, 1999/00
no abstracts in English
-ray irradiationOshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu
Japanese Journal of Applied Physics, Part 2, 37(8B), p.L1002 - L1004, 1998/08
Times Cited Count：15 Percentile：57.33(Physics, Applied)no abstracts in English
Ito, Hisayoshi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; T.Troffer*; G.Pensl*
Ionics, 24, p.45 - 52, 1998/07
no abstracts in English
-implanted 6H-SiC using monoenergetic positron beamsUedono, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Suzuki, Ryoichi*; ; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*
Japanese Journal of Applied Physics, Part 1, 37(5A), p.2422 - 2429, 1998/05
Times Cited Count：13 Percentile：53.11(Physics, Applied)no abstracts in English
Hirao, Toshio; ; ; Nashiyama, Isamu; Matsuda, Sumio*; Nemoto, N.*; Onishi, K.*
SDM97-194, p.57 - 63, 1998/02
no abstracts in English
Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; ; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01
no abstracts in English
