Refine your search:     
Report No.
 - 
Search Results: Records 1-20 displayed on this page of 74

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Evaluation of the white neutron beam spectrum for single-event-effects testing at the RCNP cyclotron facility

Iwamoto, Yosuke; Fukuda, Mitsuhiro*; Sakamoto, Yukio; Tamii, Atsushi*; Hatanaka, Kichiji*; Takahisa, Keiji*; Nagayama, Keiichi*; Asai, Hiroaki*; Sugimoto, Kenji*; Nashiyama, Isamu*

Nuclear Technology, 173(2), p.210 - 217, 2011/02

 Times Cited Count:21 Percentile:11.99(Nuclear Science & Technology)

The 30 $$^{circ}$$ white neutron beam at RCNP facility has been characterized as a prove suitable for testing of single event effects (SEEs) in semiconductors in the neutron energy range from 1 to 300 MeV using the 392-MeV proton incident reaction on a 6.5-cm-thick tungsten target. The neutron spectrum in measurements were demonstrated to provide a neutron spectrum similar to the terrestrial one at sea level, but with an enhancement in the intensity of a factor of 1.5$$times$$10$$^{8}$$. The average neutron intensity and spectrum from 10 to 300 MeV at RCNP were almost same as those at WNR. The calculated RCNP neutron flux using PHITS generally agreed with the measured RCNP data within a factor of two. As the neutron density per pulse for RCNP is 500 times lower than that for WNR, the pileup probability of single-event transient currents and false multiple-bit upsets is reduced. Such conditions at RCNP are suitable for accelerated SEE testing to get meaningful results in realistic time frame.

Journal Articles

Studies of single-event transient current induced in GaAs and Si diodes by energetic heavy ions

Hirao, Toshio; Ito, Hisayoshi; Okada, Sohei; Nashiyama, Isamu*

Radiation Physics and Chemistry, 60(4-5), p.269 - 272, 2001/03

 Times Cited Count:5 Percentile:58.69

no abstracts in English

Journal Articles

Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation

Oshima, Takeshi; Abe, Koji*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Nashiyama, Isamu*; Okada, Sohei

Applied Physics A, 71(2), p.141 - 145, 2000/10

no abstracts in English

Journal Articles

Crystallization of an amorphous layer in P$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Frank, T.*; Pensl, G.*; Suzuki, Ryoichi*; Odaira, Toshiyuki*; et al.

Journal of Applied Physics, 87(9), p.4119 - 4125, 2000/05

 Times Cited Count:12 Percentile:49.02(Physics, Applied)

no abstracts in English

Journal Articles

Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; et al.

Materials Science Forum, 338-342, p.857 - 860, 2000/00

no abstracts in English

Journal Articles

Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu

Materials Science Forum, 338-342, p.1299 - 1302, 2000/00

no abstracts in English

Journal Articles

Chemical effect on X-ray spectra induced by multiple inner-shell ionization, 2

Kawatsura, Kiyoshi*; Takeshima, Naoki*; Terazawa, Norihisa*; Aoki, Yasushi; Yamamoto, Shunya; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi

JAERI-Review 99-025, TIARA Annual Report 1998, p.188 - 190, 1999/10

no abstracts in English

Journal Articles

Chemical effect on X-ray spectra induced by multiple inner-shell ionization, 2

Kawatsura, Kiyoshi*; Takeshima, Naoki*; Terazawa, Norihisa*; Aoki, Yasushi*; Yamamoto, Shunya; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi

JAERI-Review 99-025, TIARA Annual Report 1998, p.188 - 190, 1999/10

no abstracts in English

Journal Articles

Study of residual defects in ion-implanted and subsequently annealed 3C-SiC

Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00

no abstracts in English

Journal Articles

Characterization of point defects in cubic silicon carbide using positron annihilation

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00

no abstracts in English

Journal Articles

Molybdenum substitutional doping and its effects on phase transition properties in single crystalline vanadium dioxide thin film

Wu, Z. P.*; Miyashita, Atsumi; Yamamoto, Shunya; Abe, Hiroaki; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi

Journal of Applied Physics, 86(9), p.5311 - 5313, 1999/00

 Times Cited Count:53 Percentile:12.12(Physics, Applied)

no abstracts in English

Journal Articles

Oxygen-related defects in O$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu

Journal of Applied Physics, 86(10), p.5392 - 5398, 1999/00

 Times Cited Count:10 Percentile:52.63(Physics, Applied)

no abstracts in English

Journal Articles

$$gamma$$-ray irradiation effects on 6H-SiC MOSFET

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Mater. Sci. Eng. B, 61-62, p.480 - 484, 1999/00

 Times Cited Count:21 Percentile:26.76(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Studies of charge collection mechanisms in SOI devices using a heavy-ion microbeam

Hirao, Toshio; *; Sakai, Takuro; Nashiyama, Isamu

Nuclear Instruments and Methods in Physics Research B, 158(1-4), p.260 - 263, 1999/00

 Times Cited Count:9 Percentile:40.33(Instruments & Instrumentation)

no abstracts in English

Journal Articles

The Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

Saido, Masahiro; Fukuda, Mitsuhiro; Arakawa, Kazuo; Tajima, Satoshi; Sunaga, Hiromi; Yotsumoto, Keiichi; Kamiya, Tomihiro; Tanaka, Ryuichi; Hirao, Toshio; Nashiyama, Isamu; et al.

Proceedings of 1999 IEEE Nuclear and Space Radiation Effects Conference, p.117 - 122, 1999/00

no abstracts in English

Journal Articles

Generation of interface traps and oxide-trapped charge in 6H-SiC metal-oxide-semiconductor transistors by $$gamma$$-ray irradiation

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Japanese Journal of Applied Physics, Part 2, 37(8B), p.L1002 - L1004, 1998/08

 Times Cited Count:13 Percentile:45.03(Physics, Applied)

no abstracts in English

Journal Articles

Control of electrical properties of SiC using ion implantation technique

Ito, Hisayoshi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; T.Troffer*; G.Pensl*

Ionics, 24, p.45 - 52, 1998/07

no abstracts in English

Journal Articles

Investigation of vacancy-type defects in P$$^{+}$$-implanted 6H-SiC using monoenergetic positron beams

Uedono, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*

Japanese Journal of Applied Physics, Part 1, 37(5A), p.2422 - 2429, 1998/05

 Times Cited Count:13 Percentile:45.03(Physics, Applied)

no abstracts in English

Journal Articles

Measurement of collected charge induced by heavy ion microbeam in SOI devices

Hirao, Toshio; *; *; Nashiyama, Isamu; Matsuda, Sumio*; Nemoto, N.*; Onishi, K.*

SDM97-194, p.57 - 63, 1998/02

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and the mechanisms on electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01

no abstracts in English

74 (Records 1-20 displayed on this page)