Refine your search:     
Report No.
 - 
Search Results: Records 1-4 displayed on this page of 4
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

Kubota, Masato; Nigo, Seisuke*; Kato, Seiichi*; Amemiya, Kenta*

AIP Advances (Internet), 9(9), p.095050_1 - 095050_4, 2019/09

 Times Cited Count:0 Percentile:0(Nanoscience & Nanotechnology)

We measured the X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects which exhibits the resistance random access memory effect. For the first time, we detected changes in the electronic structure owing to the memory effect. A major difference in spectrum was observed near the O K-absorption edge.

Journal Articles

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Nigo, Seisuke*; Kubota, Masato; Harada, Yoshitomo*; Hirayama, Taisei*; Kato, Seiichi*; Kitazawa, Hideaki*; Kido, Giyu*

Journal of Applied Physics, 112(3), p.033711_1 - 033711_6, 2012/08

 Times Cited Count:61 Percentile:89.5(Physics, Applied)

Oral presentation

Electronic structure in resistance random access memory effect in alumina

Kubota, Masato; Kato, Seiichi*; Nigo, Seisuke*; Amemiya, Kenta*

no journal, , 

no abstracts in English

Oral presentation

Direct observation of electronic structure of amorphous alumina ReRAM by synchrotron radiation

Kato, Seiichi*; Nigo, Seisuke*; Kubota, Masato; Amemiya, Kenta*

no journal, , 

no abstracts in English

4 (Records 1-4 displayed on this page)
  • 1