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p diodes by MeV range heavy ionsOshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Wagner, G.*; Ito, Hisayoshi; Kawano, Katsuyasu*
Surface & Coatings Technology, 206(5), p.864 - 868, 2011/11
Times Cited Count：4 Percentile：19.03(Materials Science, Coatings & Films)Charge induced in np Silicon Carbide (6H-SiC) diodes by heavy ions, oxygen (O), silicon (Si), nickel (Ni), and gold (Au) using a Transient Ion Beam Induced Current (TIBIC) measurement system. The slight increase in collected charge shows in a low bias region, and then, the values are saturated in a high bias region. This indicates that in the low bias region, since the length of the depletion layer is shorter than the ion range, carriers induced in deeper than the depletion layer diffuse and annihilate before they reach the depletion layer. Since the length of the depletion layer increases with increasing bias voltage, the charge collected by diodes increases with increasing bias voltage. In the case of the high bias, the length of the depletion layer is longer than the ion range. As a result, all carriers are induced in the depletion layer, and they can be collected by the electric field. Thus, This indicates that the value of collected charge does not depend on bias voltage. From the point of view of charge collection efficiency (CCE), the collected charge decrease with increasing atomic number. From the calculation, it is found that dense electron-hole pairs were generated in SiC by irradiation of ions with heavy mass. The decrease in the CCE due to ion irradiation with heavy mass can be interpreted in terms of the annihilation of e-h pairs in plasma due to the Auger recombination.
Onoda, Shinobu; Iwamoto, Naoya; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Kawano, Katsuyasu*; Oshima, Takeshi
IEEE Transactions on Nuclear Science, 56(6), p.3218 - 3222, 2009/12
Times Cited Count：18 Percentile：74.76(Engineering, Electrical & Electronic)no abstracts in English
n and np diodes by heavy ion micro beamsOshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Kamiya, Tomihiro; Kawano, Katsuyasu*
Nuclear Instruments and Methods in Physics Research B, 267(12-13), p.2189 - 2192, 2009/06
Times Cited Count：9 Percentile：53.48(Instruments & Instrumentation)In this study, pn and np diodes were fabricated on 6H-SiC epitaxial layers. The transient currents induced in these diodes by the incidence of tens MeV range heavy ion micro beams were collected by the Transient Ion Beam Induced Current (TIBIC) measurement system. The value of Charge Collection Efficiency (CCE) for the SiC diodes was obtained by analyzing the transient currents. As a result using 9 MeV-oxygen ions, the CCE value of around 85 % was obtained from both pn and np diodes. Since the CCE value includes non-ionizing energy loss as well as the decay of charge in the measurement system, the obtained CCE value suggests that SiC pn as well as np diodes are suitable for particle detectors. For ion species dependence, the values of CCE for both pn and np diodes decrease with increasing atomic number of incident ions. This decrease in CCE by heavy ion incidence can be interpreted in terms of Auger recombination in dense electron-hole pairs.
Onoda, Shinobu; Iwamoto, Naoya; Hirao, Toshio; Kawano, Katsuyasu*; Kojima, Kazutoshi*; Oshima, Takeshi
AIP Conference Proceedings 1099, p.1010 - 1013, 2009/03
no abstracts in English
Onoda, Shinobu; Iwamoto, Naoya; Hirao, Toshio; Oshima, Takeshi; Kawano, Katsuyasu*
JAEA-Conf 2008-012, p.146 - 149, 2009/03
no abstracts in English
p diodesOnoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Materials Science Forum, 600-603, p.1039 - 1042, 2009/00
no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*
Materials Science Forum, 600-603(Part 2), p.1043 - 1046, 2009/00
The 6H-SiC np diodes were fabricated on a p-type substrate. To clarify the radiation resistance of the device performance, the diodes were irradiated with 1MeV-electrons at fluence up to 6
10
/cm
and the Charge Collection Efficiencies (CCEs) and diffusion length (L) of minority carriers were evaluated from the evaluation of the Transient Ion Beam Induced Current (TIBIC). The saturated CCE of 93% was obtained for non-electron irradiated diodes, and the value of CCE was kept up to electron fluences of 110
/cm, although L decreased to 0.6
m from 2.5m by the irradiation. The degradation of CCE was observed at fluences above 510/cm.
Onoda, Shinobu; Iwamoto, Naoya; Murakami, Makoto; Oshima, Takeshi; Hirao, Toshio; Kojima, Kazutoshi*; Kawano, Katsuyasu*; Nakano, Itsuo*
Materials Science Forum, 615-617, p.861 - 864, 2009/00
no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Materials Science Forum, 615-617, p.517 - 520, 2009/00
Single event transient currents induced in 6H-SiC Metal-Oxide-Semiconductors (MOS) capacitors by using oxygen ions are investigated. Charges collected from the MOS capacitors are estimated by the integration of transient currents. Applying the drift-diffusion model to the collected charges, the diffusion length of electron is estimated. Transient currents induced in the 
-ray irradiated MOS capacitors are also investigated. No significant change in the transient currents is observed after -ray irradiation.
Oshima, Takeshi; Onoda, Shinobu; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.175 - 178, 2008/12
The reduction of Charge Collection Efficiency (CCE) in silicon carbide (SiC) diodes due to -ray, 1MeV electron, and 65MeV proton irradiations is discussed. The pn junction diodes were fabricated on SiC epitaxial layers using hot implantation. The transient currents induced by ion beam were measured using Transient Ion Beam Induced Current (TIBIC) measurement systems. The CCE are estimated from the integration of the transient current. The diodes were irradiated with either -rays, electrons at 1MeV, or protons at 65 MeV to create damage in the diodes. The CCE in the irradiated diodes was also measured. The results obtained in these measurements were evaluated using a concept of Non Ionizing Energy Loss (NIEL).
Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.191 - 194, 2008/12
no abstracts in English
rays in a 6H-SiC diodeOnoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Mishima, Kenta; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*
IEEE Transactions on Nuclear Science, 54(6), p.1953 - 1960, 2007/12
Times Cited Count：19 Percentile：76.84(Engineering, Electrical & Electronic)Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Mishima, Kenta; Hishiki, Shigeomi; Iwamoto, Naoya; Kawano, Katsuyasu*
IEEE Transactions on Nuclear Science, 54(6), p.2706 - 2713, 2007/12
Times Cited Count：16 Percentile：72.04(Engineering, Electrical & Electronic)no abstracts in English
Onoda, Shinobu; Iwamoto, Naoya; Oshima, Takeshi; Hirao, Toshio; Kawano, Katsuyasu*
Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.35 - 40, 2007/12
no abstracts in English
Iwamoto, Naoya; Oshima, Takeshi; Onoda, Shinobu; Hishiki, Shigeomi*; Murakami, Makoto; Nakano, Itsuo*; Kawano, Katsuyasu*
Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.27 - 30, 2007/12
no abstracts in English
Takahashi, Yoshihiro*; Oki, Takahiro*; Nagasawa, Takaharu*; Nakajima, Yasuhito*; Kawanabe, Ryu*; Onishi, Kazunori*; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu*; et al.
Nuclear Instruments and Methods in Physics Research B, 260(1), p.309 - 313, 2007/07
Times Cited Count：4 Percentile：35.71(Instruments & Instrumentation)no abstracts in English
Kagohara, Kyoko*; Imaizumi, Toshifumi*; Miyauchi, Takahiro*; Sato, Hiroshi*; Uchida, Takuma*; Echigo, Tomoo*; Ishiyama, Tatsuya*; Matsuta, Nobuhisa*; Okada, Shinsuke*; Ikeda, Yasutaka*; et al.
Chigaku Zasshi, 115(6), p.691 - 714, 2006/12
The eastern marginal fault zone of the Yokote Basin is one of seismogenic reverse faults developed in Northeast Japan, generating the 1896 Riku-u Earthquake (M7.2). We discussed the relationship among fault traces, geomorphic displacements and fault geometries on the Senya fault, based on a data from high-resolution seismic reflection profiling, investigations in tectonic geomorphology and structural geology, with the help of the balanced cross section method. By the restoring the balanced cross sections, the horizontal shortening amount is estimated to be totally 3 km through the thrust system, and the thrusting is retroactive to 2.4 Ma. Depending on the strike of fault traces and the morphotectonic features, the Senya fault is subdivided into three, the northern, central and southern portion. The initiation of thrust front migration is ca.1.6 Ma at the central portion and 0.6 Ma at the northern portion. This means that the central portion preceded the northern portion as an emergent fault, and suggests that the initial propagated fault extends from the fault end to the boundary fault.
Onoda, Shinobu; Hirao, Toshio; Laird, J. S.*; Mishima, Kenta; Kawano, Katsuyasu*; Ito, Hisayoshi
IEEE Transactions on Nuclear Science, 53(6), p.3731 - 3737, 2006/12
Times Cited Count：16 Percentile：72.85(Engineering, Electrical & Electronic)no abstracts in English
p diodes irradiated with Au-ionsIwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.185 - 188, 2006/10
no abstracts in English
Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Mishima, Kenta; Iwamoto, Naoya; Kamiya, Tomihiro; Kawano, Katsuyasu*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.115 - 118, 2006/10
no abstracts in English
