Report for "FY 2013 Evaluation of Decontamination Technology Demonstrations Projects for the environmental remediation with radioactive materials discharged from the Fukushima Daiichi Nuclear Power Plant Accident" (Contract research)

Watanabe, Masahisa; Tagawa, Akihiro; Umemiya, Noriko; Maruyama, Noboru; Yoshida, Mami; Kawase, Keiichi; Noguchi, Shinichi; Sakazume, Yoshinori; Watanabe, Masanori; Hiraga, Hayato; et al.

JAEA-Review 2014-028, 184 Pages, 2014/10

JAEA-Review-2014-028.pdf:37.79MB

JAEA received technical proposals from private enterprise about techniques that can be used for decontamination work, and "Decontamination Technology Demonstrations Projects" was commissioned from the Ministry of the Environment to verifies the decontamination effect, economy feasibility, safety, and other factors. By the "FY 2013 Decontamination Technology Demonstrations Projects" JAEA carried out technical advice of demonstration test and evaluation of 11 technologies (e.g., decontamination of soils and green space and wastes and washing of fly ash).

Development program of IS process pilot test plant for hydrogen production with high-temperature gas-cooled reactor

Iwatsuki, Jin; Terada, Atsuhiko; Noguchi, Hiroki; Imai, Yoshiyuki; Ijichi, Masanori; Kanagawa, Akihiro; Ota, Hiroyuki; Kubo, Shinji; Onuki, Kaoru; Hino, Ryutaro

Proceedings of 14th International Conference on Nuclear Engineering (ICONE-14) (CD-ROM), 8 Pages, 2006/07

JAEA has been conducting the HTTR project from the view to establishing technology base on HTGR and also on the IS process. Based on the test results and know-how obtained through the bench-scale tests, a pilot test plant that can produce hydrogen of about 30 Nm/hr is being designed. The test plant will be fabricated with industrial materials such as glass coated steel, SiC ceramics etc, and operated under high pressure condition up to 2 MPa. The test plant will consist of a IS process plant and a helium gas (He) circulation facility (He loop). In parallel to the design study, key components of the IS process such as the sulfuric acid (HSO) and the sulfur trioxide (SO) decomposers working under-high temperature corrosive environments have been designed and test-fabricated to confirm their fabricability. Also, other R&D's are under way such as corrosion, processing of HIx solutions. This paper describes present status of these activities.

Design study of pilot test plant for hydrogen production by thermo-chemical water splitting IS process

Iwatsuki, Jin; Terada, Atsuhiko; Noguchi, Hiroki; Kanagawa, Akihiro; Ijichi, Masanori; Kasahara, Seiji; Kubo, Shinji; Sakaba, Nariaki; Onuki, Kaoru; Hino, Ryutaro

no journal, , 

The Japan Atomic Energy Agency (JAEA) has been conducting the HTTR (High-Temperature Engineering Test Reactor) project from the view to establishing technology base on HTGR and also on the IS process. In JAEA, continuous hydrogen production was demonstrated with the hydrogen production rate of about 30 NL/hr for one week using a bench-scale test apparatus made of glass. Based on the test results and know-how obtained through the bench-scale tests, a pilot test plant that can produce hydrogen of about 30 Nm/hr is being designed. The test plant will be fabricated with industrial materials such as glass coated steel, SiC ceramics etc, and operated under high pressure condition up to 2 MPa. In parallel to the design study, key components of the IS process have been designed and test-fabricated to confirm their fabricability. Also, other R&D's are under way such as steady state simulation of pilot system, corrosion resistant seal and piping technology. This paper describes present status of these activities.

Photoluminescence properties of light-emitting SiO substrates implanted with Si and C ions

Inada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito

no journal, , 

It is reported that Si and C ions implanted SiO substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was 5.010 ions/cm. The C-ion implantation energy was 75 keV, and the implantation dose was 3.010 ions/cm. The samples were subsequently annealed at 700C for 25 min in air, after 1000C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.