Investigation and design of the dismantling process of irradiation capsules containing tritium, 1; Conceptual investigation and basic design

Hayashi, Kimio; Nakagawa, Tetsuya; Onose, Shoji; Ishida, Takuya; Kodaka, Hideo; Katsuyama, Kozo; Kitajima, Toshio; Takahashi, Kozo; Tsuchiya, Kunihiko; Nakamichi, Masaru; et al.

JAEA-Technology 2008-010, 68 Pages, 2008/03

JAEA-Technology-2008-010.pdf:11.31MB

In-pile functional tests of breeding blankets for fusion reactors have been planned by Japan Atomic Energy Agency (JAEA), using a test blanket module (TBM) which will be loaded in ITER. The present report describes a conceptual investigation and a basic design of the dismantling process for irradiation capsules which were used in irradiation experiments by the Japan Materials Testing Reactor (JMTR) of JAEA. In the present design, the irradiation capsule is cut by a band saw; the released tritium is recovered safely by a purge-gas system, and is consolidated into a radioactive waste form. Furthermore, adoption of the inner-box enclosing the dismantling apparatus has brought a prospect to be able to utilize an existing hot cell (beta- cell) equipped with usual wall material permeable to tritium, without extensive refurbishing of the cell. Thus, the present study has indicated the feasibility of the present dismantling process for the irradiated JMTR capsules containing tritium.

RF property of the prototype cryomodule for ADS superconducting linac

Kako, Eiji*; Noguchi, Shuichi*; Ouchi, Norihito*; Shishido, Toshio*; Akaoka, Nobuo*; Kobayashi, Hideki*; Ouchi, Nobuo; Ueno, Tomoaki*; Hara, Hiroshi*; Matsuoka, Masanori*; et al.

Proceedings of 9th European Particle Accelerator Conference (EPAC 2004) (CD-ROM), p.1042 - 1044, 2004/07

no abstracts in English

Fabrication and evaluation of light-emitting SiO substrate co-implanted with Si and C ions

Kikuchi, Shusuke*; Umenyi, A. V.*; Inada, Kazuki*; Kawashima, Akihiro*; Noguchi, Katsuya*; Sasaki, Tomoyuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; et al.

no journal, , 

Light emission around a wavelength () of 500 nm from SiO substrates implanted with Si and C ions and annealed at 1100C has been reported. In this report, we investigated photoluminescence (PL) properties of SiO substrates implanted with Si and C ions and annealed at the lower temperature of 700C. PL peaks by Si-ion implantation were observed around = 650 nm, and PL peaks by C-ion implantation were observed around = 450 nm from SiO substrates annealed at 700C. The PL peak wavelength became shorter by increasing the ratio of C to Si ions. Consequently, it was confirmed that it is possible to control the emission wavelength by the ratio of C to Si ions. Our samples showed typical light-emission though the annealing temperature was lower than the temperature reported by other groups.

Photoluminescence properties of light-emitting SiO substrates implanted with Si and C ions

Inada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito

no journal, , 

It is reported that Si and C ions implanted SiO substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was 5.010 ions/cm. The C-ion implantation energy was 75 keV, and the implantation dose was 3.010 ions/cm. The samples were subsequently annealed at 700C for 25 min in air, after 1000C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.