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Journal Articles

High temperature gas-cooled reactors

Takeda, Tetsuaki*; Inagaki, Yoshiyuki; Aihara, Jun; Aoki, Takeshi; Fujiwara, Yusuke; Fukaya, Yuji; Goto, Minoru; Ho, H. Q.; Iigaki, Kazuhiko; Imai, Yoshiyuki; et al.

High Temperature Gas-Cooled Reactors; JSME Series in Thermal and Nuclear Power Generation, Vol.5, 464 Pages, 2021/02

As a general overview of the research and development of a High Temperature Gas-cooled Reactor (HTGR) in JAEA, this book describes the achievements by the High Temperature Engineering Test Reactor (HTTR) on the designs, key component technologies such as fuel, reactor internals, high temperature components, etc., and operational experience such as rise-to-power tests, high temperature operation at 950$$^{circ}$$C, safety demonstration tests, etc. In addition, based on the knowledge of the HTTR, the development of designs and component technologies such as high performance fuel, helium gas turbine and hydrogen production by IS process for commercial HTGRs are described. These results are very useful for the future development of HTGRs. This book is published as one of a series of technical books on fossil fuel and nuclear energy systems by the Power Energy Systems Division of the Japan Society of Mechanical Engineers.

Journal Articles

Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

Proceedings of SPIE, Vol.8725 (CD-ROM), 8 Pages, 2013/06

 Times Cited Count:0 Percentile:0.01

Journal Articles

$$E_1/E_2$$ traps in 6H-SiC studied with Laplace deep level transient spectroscopy

Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; Hamilton, B.*; et al.

Applied Physics Letters, 102(3), p.032104_1 - 032104_4, 2013/01

 Times Cited Count:11 Percentile:46.88(Physics, Applied)

Journal Articles

Peak degradation of heavy-ion induced transient currents in 6H-SiC MOS capacitor

Makino, Takahiro; Iwamoto, Naoya*; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.469 - 472, 2012/05

 Times Cited Count:1 Percentile:58.18

The peak amplitude of ion induced transient current in n-type 6H-SiC MOS capacitors decreased as the number of incident ions increased and the decrease was recovered to the initial value by applying a positive bias at +1 V. In addition, we monitored a change in the capacitance for the MOS capacitors during ion irradiation. The capacitances increase as the number of incident ion increase. Thus, the result obtained in this study indicates that the depletion layer decreased as the increasing number of incident ions and saturated. Since the number of incident ions at the peak current saturation corresponds to the saturation of the capacitance, we can conclude that the decrease in peak current comes from the decrease in the depletion layer. In addition, the generation of electron-hole pairs by incident ion may result in the formation of an inversion layer. This would have the effect of shielding the charge carriers from the applied bias further reducing the depletion layer width.

Journal Articles

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy; Their impact on the degraded charge collection efficiency

Iwamoto, Naoya*; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.267 - 270, 2012/05

 Times Cited Count:1 Percentile:58.18

In this study, we carried out an attempt to identify the defects responsible for the degraded charge collection efficiency of the 6H-SiC p$$^{+}$$n diode irradiated with 1 MeV electrons by the alpha particle induced charge transient spectroscopy. To form defects in the SiC crystal, one of the diodes was irradiated with 1 MeV electrons at a fluence of 1$$times$$10$$^{15}$$ /cm$$^{2}$$. Collected charges of the diodes were measured in room temperature using 5.486 MeV alpha particles from $$^{241}$$Am source. After the electron irradiation, the collected charge of the diode at a reverse bias of 100 V decreased to 84% of its initial value. In order to investigate the relationship between degradation of collected charge and defects in detail, time-dependent collected charges of the diodes were measured in temperature ranges from 170 K to 310 K. As a result, two distinct peaks labeled X$$_{1}$$ and X$$_{2}$$ are found for the electron-irradiated diode, and their activation energies are estimated to be 0.30 and 0.47 eV, respectively. These two peaks are considered to correspond to the defect levels introduced by the electron irradiation. In particular, when the diodes are used in room temperature, X$$_{2}$$ is more critical to the charge collection than X$$_{1}$$.

Journal Articles

Single-alpha-particle-induced charge transient spectroscopy of the 6H-SiC p$$^+$$n diode irradiated with high-energy electrons

Iwamoto, Naoya; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

IEEE Transactions on Nuclear Science, 58(6), p.3328 - 3332, 2011/12

 Times Cited Count:5 Percentile:41.01(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Refreshable decrease in peak height of ion beam induced transient current from silicon carbide metal-oxide-semiconductor capacitors

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Deki, Manato; Nozaki, Shinji*

AIP Conference Proceedings 1336, p.660 - 664, 2011/05

 Times Cited Count:1 Percentile:49.8

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H- and 6H-SiC epitaxial layers, and transient currents induced in SiC MOS capacitors by ion incidence were investigated. Transient Ion Beam Induced Current (TIBIC) measurements were performed using 15 MeV oxygen ions. As a result, the TIBIC peak height decreased with increasing number of incident ions. For example, the TIBIC signal peak for a 4H-SiC MOS capacitor at a reverse bias of 15 V was 0.18 mA at the beginning. The peak decreased to be 0.10 mA after 1800 ion irradiation. After that, the forward bias of 1 V was applied to the MOS capacitor and the TIBIC measurements were carried out under the same conditions. As a result, the peak height was recovered to be 0.18 mA. In general, the response of charge de-trapping by deep levels in wide bandgap semiconductors is very slow and they act as fixed charge. Since dense electron-hole pairs are generated by ion incident and holes move to the SiO$$_{2}$$/SiC interface by the electric field (applied reverse bias). Therefore, the decrease in TIBIC signal peak can be interpreted in terms of the recombination of negatively charged acceptor type deep levels with ion induced holes.

Journal Articles

Oxygen ion induced charge in SiC MOS capacitors irradiated with $$gamma$$-rays

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Nozaki, Shinji*; Kojima, Kazutoshi*

Materials Science Forum, 679-680, p.362 - 365, 2011/03

 Times Cited Count:1 Percentile:59.36

Charge induced in the 6H-Silicon Carbide (SiC) n Metal-Oxide-Semiconductor (MOS) capacitors by 15 MeV oxygen ion microbeams was evaluated using Transient Ion Beam Induced Current (TIBIC) before and after $$gamma$$-ray irradiations. With increasing number of incident ions, the peak height of TIBIC signals decreases and the fall time increases. The decrease in TIBIC peak finally saturated. The peak height of the TIBIC signal can be refreshed to its original shape by applying a positive bias of + 1V to the oxide electrode. This result can be explained in terms of the existence of deep hole traps. Small decrease in both TIBIC signal peak and collected charge was observed due to $$gamma$$-ray irradiation.

Journal Articles

Transient analysis of an extended drift region in a 6H-SiC diode formed by a single alpha particle strike and its contribution to the increased charge collection

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

IEEE Transactions on Nuclear Science, 58(1), p.305 - 313, 2011/02

 Times Cited Count:9 Percentile:59.87(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Charge enhancement effects in 6H-SiC MOSFETs induced by heavy ion strike

Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya*; Vizkelethy, G.*; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 57(6), p.3373 - 3379, 2010/12

no abstracts in English

Journal Articles

Enhanced charge collection in drain contact of 6H-SiC MOSFETs induced by heavy ion microbeam

Onoda, Shinobu; Vizkelethy, G.*; Makino, Takahiro; Iwamoto, Naoya; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.230 - 233, 2010/10

Journal Articles

Time-dependent collected charges of 6H-SiC p$$^+$$n diodes measured using alpha particles

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.222 - 225, 2010/10

Journal Articles

Change in current induced from silicon carbide metal-oxide-semiconductor capacitors by oxygen ions

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Deki, Manato; Nozaki, Shinji*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.85 - 88, 2010/10

Journal Articles

Charge collection efficiency of 6H-SiC P$$^{+}$$N diodes degraded by low-energy electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 645-648, p.921 - 924, 2010/00

Electron irradiation effects on the charge collection efficiency (CCE) of the 6H-SiC p$$^{+}$$n diodes were investigated. The diodes were irradiated with electrons at energies from 100 keV to 1 MeV. The value of CCE of the diodes using alpha particles compared before and after the electron irradiations. In the case of 100 keV electron, no significant change in CCE was observed. On the other hand, above 200 keV, the values of CCE decreased with increasing fluence. The degradation was larger with increasing incident electron energy.

Oral presentation

Decreases in charge collection efficiencies of 6H-SiC diodes due to low-energy electron irradiations

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Relationship between decrease in charge collection efficiency of 6H-SiC pn diodes and energy of electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Spatial dependence of transient currents induced in 6H-SiC MOSFETs by single heavy ion

Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Effects of electron irradiation induced defects on the transient charge collections of SiC diodes

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Transient currents observed from drain contact of 6H-SiC MOSFETs induced by single heavy ion

Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Defects characterization of 6H-SiC p$$^+$$n diode by laplace transform DLTS

Koike, Shumpei*; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Ono, Hiroshi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

27 (Records 1-20 displayed on this page)