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GeTe
homojunctions小幡 玲二*; 齊藤 英治; 吉川 貴史; 他13名*
Advanced Materials, 37(8), p.2411459_1 - 2411459_11, 2025/02
被引用回数：4 パーセンタイル：96.28(Chemistry, Multidisciplinary)Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two-dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so-called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there have been only few reports on integrated vdW layers with large twist angles 
, such as twisted interfacial Josephson junctions using high-temperature superconductors. Herein, vdW homojunctions of the thin-magnetic flakes, Fe
GeTe
(FGT), with large ranging from 0 to 90 deg, without inserting any tunnel barriers are assembled. Nevertheless, these vdW homojunctions exhibit tunnel-magnetoresistance (TMR) like behavior (pseudo-TMR (PTMR) effect) with the ratios highly sensitive to the values, revealing that the vdW gap at the junction interface between the twisted FGT layers behaves like a tunnel barrier and the serves a control parameter for PTMR by drastically varying magnitudes of the lattice-mismatch and the subsequent appearance of antiferromagnetic (AFM) spin alignment. First-principles calculations considering vacuum gaps indicate strong dependence of TMR on the driven by the sixfold screw rotational symmetry of bulk FGT. The present homojunctions hold promise as a platform for novel AFM spin-dependent phenomena and spintronic applications.
GeTe nanomeshes小幡 玲二*; 吉川 貴史*; 齊藤 英治; 他7名*
Nanotechnology, 35(47), p.475601_1 - 475601_9, 2024/11
被引用回数：1 パーセンタイル：18.19(Nanoscience & Nanotechnology)The growth of two-dimensional van der Waals magnetic materials presents attractive opportunities for exploring new physical phenomena and valuable applications. Among these materials, FeGeTe (FGT) exhibits a variety of remarkable properties and has garnered significant attention. Herein, we have for the first time created a nanomesh structure-a honeycomb-like array of hexagonal nanopores-with the zigzag pore-edge atomic structure on thin FGT flakes with and without oxidation of the pore edges. It is revealed that the magnitude of ferromagnetism (FM) significantly increases in both samples compared with bulk flakes without nanomeshes. Critical temperature annealing results in the formation of zigzag pore edges and interpore zigzag-edge nanoribbons. We unveil that the non-oxide (O) termination of the Fe dangling bonds on these zigzag edges enhances FM behavior, while O-termination suppresses this FM by introducing antiferromagnetic behavior through edge O-Fe coupling. FGT nanomeshes hold promise for the creation of strong FM and their effective application in magnetic and spintronic systems.
substrate小幡 玲二*; 齊藤 英治; 吉川 貴史; 他7名*
Advanced Materials, 36(19), p.2311339_1 - 2311339_8, 2024/05
被引用回数：1 パーセンタイル：18.19(Chemistry, Multidisciplinary)SrTiO (STO) substrate, a perovskite oxide material known for its high dielectric constant (epsilon), facilitates the observation of various (high-temperature) quantum phenomena. A quantum Hall topological insulating (QHTI) state, comprising two copies of QH states with antiparallel two ferromagnetic edge-spin overlap protected by the U(1) axial rotation symmetry of spin polarization, has recently been achieved in low magnetic field (B) even as high as approximate to 100 K in a monolayer graphene/thin hexagonal boron nitride (hBN) spacer placed on an STO substrate, thanks to the high epsilon of STO. Despite the use of the heavy STO substrate, however, proximity-induced quantum spin Hall (QSH) states in 2D TI phases, featuring a topologically protected helical edge spin phase within time-reversal-symmetry, is not confirmed. Here, with the use of a monolayer hBN spacer, it is revealed the coexistence of QSH (at B = 0T) and QHTI (at B not equal 0) states in the same single graphene sample placed on an STO, with a crossover regime between the two at low B. It is also classified that the different symmetries of the two nontrivial helical edge spin phases in the two states lead to different interaction with electron-puddle quantum dots, caused by a local surface pocket of the STO, in the crossover regime, resulting in a spin dephasing only for the QHTI state. The results obtained using STO substrates open the doors to investigations of novel QH spin states with different symmetries and their correlations with quantum phenomena. This exploration holds value for potential applications in spintronic devices.
