Electronic structure and magnetic properties of the half-metallic ferrimagnet MnVAl probed by soft X-ray spectroscopies

Nagai, Kodai*; Fujiwara, Hidenori*; Aratani, Hidekazu*; Fujioka, Shuhei*; Yomosa, Hiroshi*; Nakatani, Yasuhiro*; Kiss, Takayuki*; Sekiyama, Akira*; Kuroda, Fumiaki*; Fujii, Hitoshi*; et al.

Physical Review B, 97(3), p.035143_1 - 035143_8, 2018/01

AA2017-0644.pdf:1.01MB

https://doi.org/10.1103/PhysRevB.97.035143

We have studied the electronic structure of ferrimagnetic MnVAl single crystals by means of soft X-ray absorption spectroscopy (XAS), X-ray absorption magnetic circular dichroism (XMCD), and resonant soft X-ray inelastic scattering (RIXS). We have successfully observed the XMCD signals for all the constituent elements. The Mn L XAS and XMCD spectra are reproduced by spectral simulations based on density-functional theory, indicating the itinerant character of the Mn 3 states. On the other hand, the V 3 electrons are rather localized since the ionic model can qualitatively explain the V L XAS and XMCD spectra. This picture is consistent with local excitations revealed by the V L RIXS.

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.

Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04

https://doi.org/10.1016/j.nimb.2014.12.054

Heavy-ion-induced charge enhancement in 4H-SiC schottky barrier diodes

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.66 - 69, 2012/12

Silicon carbide (SiC) is regarded as a promising candidate for electronic devices requiring high radiation tolerance (rad-hard devices). Some results indicate that SiC has superior radiation tolerance from the point of view of total ionizing dose effects (TIDs). For the development of rad-hard SiC devices, it is necessary to understand the response of their performance when dense charge is generated in them by an incident ion, resulting in single event effects (SEEs). Therefore, we have measured the bias dependence of the collected charge distribution induced by heavy ions in 4H-SiC-schottky barrier diodes (SBDs) fabricated in thick epi-layer to reveal SEE mechanisms. As a result, anomalous collected charge peaks (2nd peaks) induced by the heavy ions were observed for the first time. The new process of the SEB was observed in the case of incident ions on thick epi-layer of SiC-SBDs.

Effect of a body-tie structure fabricated by partial trench isolation on the suppression of floating body effect induced soft errors in SOI SRAM investigated using nuclear probes

Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*; Takai, Mikio*

Nuclear Instruments and Methods in Physics Research B, 269(20), p.2360 - 2363, 2011/10

https://doi.org/10.1016/j.nimb.2011.02.053

no abstracts in English

Development of a tracking method for augmented reality applied to NPP maintenance work and its experimental evaluation

Bian, Z.*; Ishii, Hirotake*; Shimoda, Hiroshi*; Yoshikawa, Hidekazu*; Morishita, Yoshitsugu; Kanehira, Yoshiki; Izumi, Masanori

IEICE Transactions on Information and Systems, E90-D(6), p.963 - 974, 2007/06

https://doi.org/10.1093/ietisy/e90-d.6.963

This study designed linecode marker, a new type of paper-based marker and proposed recognition, tracking algorithm for it in order to resolve these problems. In comparison of the conventional paper-based markers, such as square markers, circle markers, the linecode marker is not only just easier to set up in complex industrial environment, but also makes it possible to use AR in industrial plant. In order to evaluate the tracking accuracy, trackable distance of the proposed tracking method, an evaluation experiment was conducted in a large room. The experiment results show that: comparing with traditional marker-based tracking method, tracking possible distance extends extremely; tracking accuracy improved to a level of 20cm in 10m distance.

Difference of soft error rates in Bulk/SOI SRAM using high energy nuclear probes

Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio; Iwamatsu, Toshiaki*; Oda, Hidekazu*; Takai, Mikio*

no journal, , 

no abstracts in English

Unusual charge collection from 4H-SiC Schottky barrier diode

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

no abstracts in English

Dependence of soft error rate in SOI SRAM on generated charge under buried oxide by high energy ion probes

Hazama, Masatoshi*; Abo, Satoshi*; Wakaya, Fujio*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*; Takai, Mikio*

no journal, , 

no abstracts in English

Evaluation of the defect level in 4H-SiC schottky barrier diode by alpha particle induced charge transient spectroscopy

Kambayashi, Yuya; Onoda, Shinobu; Kada, Wataru*; Makino, Takahiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi; Kamiya, Tomihiro; Hanaizumi, Osamu*

no journal, , 

no abstracts in English

Ion-induced anomalous charge collection mechanisms in SiC Schottky barrier diodes

Makino, Takahiro; Deki, Manato*; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

no abstracts in English